BOLOMETER AND METHOD FOR MANUFACTURING SAME
    62.
    发明公开

    公开(公告)号:US20230384166A1

    公开(公告)日:2023-11-30

    申请号:US18201540

    申请日:2023-05-24

    Inventor: Mayumi KOSAKA

    CPC classification number: G01J5/22 H10N15/15 G01J2005/202

    Abstract: One object of the present invention is to provide a bolometer having low resistance.
    The present invention relates to a bolometer including two electrodes and a bolometer film lying between the two electrodes to connect the two electrodes, wherein the bolometer film includes semiconducting carbon nanotubes in a proportion of 90% by mass or more to the total amount of carbon nanotubes and includes p-type semiconducting carbon nanotubes, and one or both of the two electrodes include(s) a monometal or alloy having lower work function than the p-type semiconducting carbon nanotubes at least in a part of the electrode.

    INFRARED SENSOR
    64.
    发明公开
    INFRARED SENSOR 审中-公开

    公开(公告)号:US20230304867A1

    公开(公告)日:2023-09-28

    申请号:US17659333

    申请日:2022-04-15

    CPC classification number: G01J5/20 G01J2005/202

    Abstract: An infrared sensor includes a substrate, an active pixel array, a reference pixel array, a light absorbing layer, a sidewall spacer, and a shading layer. The active pixel array is over the substrate. The reference pixel is over the substrate, adjacent to the active pixel array, and having a reference pixel. The reference pixel includes a platform, a resistor, and an infrared sensing material layer. The resistor is on the platform. The infrared sensing material layer is over the resistor. The light absorbing layer is over the reference pixel. The sidewall spacer is over the reference pixel and extends along a sidewall of the light absorbing layer. The shading layer is conformally formed over the light absorbing layer and the sidewall spacer.

    Thermistor element and electromagnetic wave sensor

    公开(公告)号:US11676744B2

    公开(公告)日:2023-06-13

    申请号:US17669755

    申请日:2022-02-11

    Abstract: A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

    SELF-AMPLIFYING SENSOR PAIR
    69.
    发明申请

    公开(公告)号:US20180202865A1

    公开(公告)日:2018-07-19

    申请号:US15316182

    申请日:2015-05-07

    Inventor: YOAV SHOHAM

    CPC classification number: G01J5/24 G01J5/0806 G01J5/20 G01J2005/202

    Abstract: A sensing device (20) includes a pair of infrared sensors comprising respective temperature-sensitive transistors (32, 34), which are configured to generate respective output signals in response to incident thermal radiation, and which are coupled together in a differential circuit topology so as to amplify a difference between the respective output signals.

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