公开(公告)号：US4631731A

公开(公告)日：1986-12-23

申请号：US576974

申请日：1984-02-03

Applicant: Joachim H. Wolter ,  Robert E. Horstman

Inventor： Joachim H. Wolter ,  Robert E. Horstman

IPC: H01S5/00 ,  H01J1/308 ,  H01S3/0959 ,  H01S3/09

CPC classification number: H01J1/308 ,  H01S3/0959

Abstract: A device for producing or amplifying coherent radiation includes a semiconductor device such as a laser. By means of electrons of high energy produced by a semiconductor cathode of the device, population inversion is obtained in an active layer of the laser structure. In this manner, laser action is obtained, which offers advantages, especially with II-VI materials which emit radiation of a wavelength shorter than the usual III-V materials, and which do not permit the desired population inversion to be obtained in the same manner as in III-V materials, by means of current injection across a pn junction. The semiconductor cathode and the laser structure can be arranged in mutual separation in a vacuum tube or be realized in one semiconductor body. The short-wave laser is especially advantageous for CD,DOR and VLP applications.

Abstract translation: 用于产生或放大相干辐射的装置包括诸如激光器的半导体器件。 通过由器件的半导体阴极产生的高能量的电子，在激光器结构的有源层中获得群体反转。 以这种方式，获得激光作用，其具有优点，特别是对于发射比通常的III-V材料短的波长的II-VI材料，并且不能以相同的方式获得所需的群体反转 如在III-V材料中，通过在pn结上的电流注入。 半导体阴极和激光器结构可以在真空管中相互分离地布置或者在一个半导体本体中实现。 短波激光器对于CD，DOR和VLP应用尤为有利。

公开(公告)号：US4325084A

公开(公告)日：1982-04-13

申请号：US170363

申请日：1980-07-21

Applicant: Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

Inventor： Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

IPC: H01J1/30 ,  H01J1/308 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J37/073 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H04N3/14 ,  H01J19/02 ,  H01L29/90 ,  H04N3/16

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J1/308 ,  H01J37/3175 ,  H01J2237/31784

Abstract: The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.

Abstract translation: 本发明涉及一种基于p-n结中的雪崩击穿的半导体阴极。 释放的电子通过设置在器件上的电极获得额外的加速能量。 实现的效率提高使得在平面硅技术中制造这样的阴极是合理的。 这种阴极例如用于阴极射线管，平面显示器，拾取管和电子光刻中。

公开(公告)号：US4040080A

公开(公告)日：1977-08-02

申请号：US724761

申请日：1976-09-20

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US4040074A

公开(公告)日：1977-08-02

申请号：US724759

申请日：1976-09-20

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US3916227A

公开(公告)日：1975-10-28

申请号：US46976274

申请日：1974-05-14

Applicant: BRAUN AG

Inventor： MOHR WALTER ,  KLAUER HANS-DIETER

IPC: H01J1/308 ,  H01L41/08

CPC classification number: H01J1/308

Abstract: A piezoelectric igniter with a manually operable striking mechanism which comprises a hammer, a piezoelectric transducer, and a energy storing or compression spring acting on said hammer and operated by an actuating member. The hammer is held in its rest position by a release device adapted to release the hammer when a definite compressive force is exerted on the same. A bounce plate is mounted at the end of the transducer facing the hammer and a return spring is provided between said bounce plate and the hammer. The transducer has a lateral clearance to a housing which receives all component parts.

Abstract translation: 一种具有可操作的打击机构的压电点火器，其包括锤，压电换能器以及作用在所述锤上并由致动构件操作的能量存储或压缩弹簧。 锤子通过释放装置保持在其静止位置，该释放装置适于在施加一定压缩力时释放锤子。 反射板安装在传感器的面向锤子的端部，并且在所述弹跳板和锤之间设置复位弹簧。 传感器具有接收所有部件的壳体的横向间隙。

公开(公告)号：US3581151A

公开(公告)日：1971-05-25

申请号：US3581151D

申请日：1968-09-16

Applicant: BELL TELEPHONE LABOR INC

Inventor： BOYLE WILLARD S ,  MORTON JACK A

IPC: H01J1/308 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01J1/308

Abstract: Cold cathode structures comprise a plurality of semiconductor whisker elements each including an electronic barrier near the free end. Electron emission is enhanced by a high external field that is concentrated at the tip of each whisker element.

公开(公告)号：US3334248A

公开(公告)日：1967-08-01

申请号：US42976465

申请日：1965-02-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： ROBERT STRATTON

IPC: H01J1/308 ,  H01L27/00

CPC classification number: H01J1/308 ,  H01L27/00

公开(公告)号：US3098168A

公开(公告)日：1963-07-16

申请号：US80082059

申请日：1959-03-20

Applicant: CSF

Inventor： PIERRE AIGRAIN

IPC: H01J1/308

CPC classification number: H01J1/308

公开(公告)号：US20170170363A1

公开(公告)日：2017-06-15

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/18 ,  H01L33/08 ,  H01L27/15 ,  H01J1/308 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/607 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US09269523B2

公开(公告)日：2016-02-23

申请号：US14599988

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  De-Jie Li ,  Chun-Hai Zhang ,  Duan-Liang Zhou ,  Bing-Chu Du ,  Shou-Shan Fan

IPC: H01L29/06 ,  H01J29/18 ,  H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J31/12

CPC classification number: H01J29/18 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes.

Abstract translation: 电子发射装置包括多个第一电极和多个彼此相交的第二电极以限定多个交点。 电子发射单元在每个交叉点的每一个处夹在第一电极和第二电极之间，其中电子发射单元包括层叠在一起的半导体层和绝缘层，半导体层限定多个孔，碳纳米管 层覆盖孔的数量，并且一部分碳纳米管层悬浮在孔的数量上。