公开(公告)号：US20090284129A1

公开(公告)日：2009-11-19

申请号：US12225798

申请日：2007-03-26

Applicant: Ryota Tanaka ,  Nobuyasu Negishi ,  Kazuto Sakemura ,  Yoshiyuki Okuda ,  Tomonari Nakada ,  Atsushi Watanabe ,  Takamasa Yoshikawa ,  Kiyohide Ogasawara

Inventor： Ryota Tanaka ,  Nobuyasu Negishi ,  Kazuto Sakemura ,  Yoshiyuki Okuda ,  Tomonari Nakada ,  Atsushi Watanabe ,  Takamasa Yoshikawa ,  Kiyohide Ogasawara

IPC: H01J1/62 ,  H01J1/00 ,  H01J9/04

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H01J2329/0481 ,  H01J2329/0484

Abstract: [PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device.[SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4b of an exposed surface 4a of the electron supply layer 4 and being in contact with an edge portion 4c of the exposed surface 4a of the electron supply layer 4.

Abstract translation: [问题]提供具有改善的电子发射效率并防止器件损坏的电子发射层。 [解决方案]一种电子发射器件，包括非晶电子供体层4，形成在电子供应层4上的绝缘层5和形成在绝缘层5上的电极6，当电场为 施加在电子供给层4和电极6之间，其中电子发射器件包括通过切割电极6和绝缘层5而露出电子供应层4而设置的凹部7和覆盖电极6的碳层8 以及除电子供给层4的露出面4a的内部4b以外与与电子供给层4的露出面4a的边缘部4c接触的凹部7。

公开(公告)号：US20070069622A1

公开(公告)日：2007-03-29

申请号：US11359974

申请日：2006-02-22

Applicant: Iwao Ohwada ,  Shuichi Ozawa ,  Koichi Yoshino ,  Shohei Yokoyama

Inventor： Iwao Ohwada ,  Shuichi Ozawa ,  Koichi Yoshino ,  Shohei Yokoyama

IPC: H01J9/02

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J1/32 ,  H01J31/127 ,  H01J2201/3125

Abstract: An electron emitter includes an emitter layer composed of a dielectric material, a first electrode disposed onto a first surface of the emitter layer, and a second electrode disposed onto the first surface, inside, or onto a second surface opposite to the first surface of the emitter layer. A microscopic recess is disposed on a surface of the first electrode. Alternatively, an opening is disposed in the first electrode, the opening exposing the first surface of the emitter layer to the outside of the electron emitter, and a plurality of microscopic protrusions are disposed along the thickness direction of the first electrode at an inner edge of the opening.

Abstract translation: 电子发射器包括由介电材料构成的发射极层，设置在发射极层的第一表面上的第一电极和设置在第一表面，内部或第二表面上的第二电极， 发射极层。 在第一电极的表面上设置有微细的凹部。 或者，开口设置在第一电极中，开口将发射极层的第一表面暴露于电子发射体的外部，并且沿着第一电极的厚度方向设置多个微观突起，在第一电极的内边缘处 开幕。

公开(公告)号：US07176609B2

公开(公告)日：2007-02-13

申请号：US10730754

申请日：2003-12-08

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/304 ,  H01J1/30

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Abstract translation: 电子发射体具有由介电材料制成的发射体，以及施加驱动电压以发射电子的上电极和下电极。 上电极形成在用作发射极的物质的第一表面上，下电极形成在用作发射体的物质的第二表面上。 上部电极具有多个贯通区域，发射体通过该区域露出。 上电极具有与通孔的周边部分中的发射极相对的表面，并且与发射极间隔开。

公开(公告)号：US20060214557A1

公开(公告)日：2006-09-28

申请号：US11377520

申请日：2006-03-16

Applicant: Iwao Ohwada ,  Natsumi Shimogawa ,  Tetsuyuki Kameji ,  Naoki Goto ,  Isao Shikata

Inventor： Iwao Ohwada ,  Natsumi Shimogawa ,  Tetsuyuki Kameji ,  Naoki Goto ,  Isao Shikata

IPC: H01J63/04 ,  H01J1/62 ,  H01J61/40

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J1/32 ,  H01J63/06 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A light source has a transparent substrate, a fixed substrate disposed in facing relation to the transparent substrate, and a plurality of electron emitters disposed on a principal surface of the fixed substrate. A light reflecting film is disposed on a portion of the principal surface of the fixed substrate which is free of the electron emitters. An anode electrode in the form of a transparent electrode is disposed on a substantially entire reverse side of the transparent substrate. Phosphor layers are disposed on the anode electrode at respective positions facing the electron emitters.

Abstract translation: 光源具有透明基板，与透明基板相对设置的固定基板和设置在固定基板的主表面上的多个电子发射体。 光反射膜设置在固定基板的不含电子发射体的主表面的一部分上。 透明电极形式的阳极设置在透明基板的大致整个背面上。 在面对电子发射体的各个位置处，在阳极电极上设置荧光体层。

公开(公告)号：US06975075B2

公开(公告)日：2005-12-13

申请号：US11004868

申请日：2004-12-07

Applicant: Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

Inventor： Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

IPC: H01J1/30 ,  G09G3/10 ,  G09G3/22 ,  G11C11/24 ,  H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J9/022 ,  H01J9/241 ,  H01J2201/3125

Abstract: A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.

公开(公告)号：US06911768B2

公开(公告)日：2005-06-28

申请号：US10263055

申请日：2002-10-01

Applicant: Zhizhang Chen ,  Sriram Ramamoorthi ,  Hung Liao ,  Paul Benning ,  Alexander Govyadinov

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Hung Liao ,  Paul Benning ,  Alexander Govyadinov

IPC: H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J29/04 ,  H01J31/12 ,  H01L29/06

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/3125

Abstract: An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.

Abstract translation: 发射极具有电子供体和具有纳米孔开口的多孔阴极层。 发射极还具有设置在电子源和阴极层之间的隧穿层。

公开(公告)号：US20050073233A1

公开(公告)日：2005-04-07

申请号：US10730754

申请日：2003-12-08

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: G09G3/22 ,  H01J1/312 ,  H01J31/12 ,  H01J63/02 ,  H01J1/38

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Abstract translation: 电子发射体具有由介电材料制成的发射体，以及施加驱动电压以发射电子的上电极和下电极。 上电极形成在用作发射极的物质的第一表面上，下电极形成在用作发射体的物质的第二表面上。 上部电极具有多个贯通区域，发射体通过该区域露出。 上电极具有与通孔的周边部分中的发射极相对的表面，并且与发射极间隔开。

公开(公告)号：US06791248B2

公开(公告)日：2004-09-14

申请号：US10438070

申请日：2003-05-15

Applicant: Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

Inventor： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC: H01J1312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

Abstract translation: 以低成本提供了以高稳定性和高效率发射电子的场致发射电子源及其制造方法。 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面， 以及散热区域162，其被填充在网孔的空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US06590321B1

公开(公告)日：2003-07-08

申请号：US09404656

申请日：1999-09-24

Applicant: Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

Inventor： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC: H01J1312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

Abstract: In a field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids ox the mesh and has a heat conduction higher than that of the drift region 161.

Abstract translation: 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部分106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面，该电极是电c 以及散热区域162，其被填充在空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US20030102793A1

公开(公告)日：2003-06-05

申请号：US10258601

申请日：2002-11-05

Inventor： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

IPC: H01J019/06 ,  H01J001/05

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Abstract translation: 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上，并且各自具有使得发生电子隧道现象的程度的膜厚度。