公开(公告)号：US20030049572A1

公开(公告)日：2003-03-13

申请号：US10235757

申请日：2002-09-06

Inventor： Yasuyuki Watanabe ,  Kazuya Ishiwata ,  Yoshimi Uda ,  Shinsaku Kubo

IPC: G03C005/00

CPC classification number: H01J9/027 ,  G03F7/0035 ,  G03F7/0047 ,  G03F7/203 ,  H01J1/88 ,  H01J3/021 ,  H01J29/02 ,  H01J29/028 ,  H01J31/127 ,  H01J2201/3165 ,  H05K1/0306 ,  H05K3/0023

Abstract: A method for forming patterned insulating elements on a substrate includes a plurality of exposure steps of exposing a photosensitive paste provided on the substrate through at least one mask having a predetermined pattern; a developing step of developing the exposed photosensitive paste to form a precursor pattern; and a firing step of firing the precursor pattern to form the patterned insulating elements. This method is applied to a method for forming an electron source and a method for forming an image display device including the electron source.

Abstract translation: 用于在衬底上形成图案化绝缘元件的方法包括多个曝光步骤，通过具有预定图案的至少一个掩模曝光设置在衬底上的感光膏; 显影步骤，用于显影曝光的感光浆料以形成前体图案; 以及烧制前体图案以形成图案化的绝缘元件的烧制步骤。 该方法适用于形成电子源的方法和用于形成包括该电子源的图像显示装置的方法。

公开(公告)号：US20030011292A1

公开(公告)日：2003-01-16

申请号：US09905481

申请日：2001-07-13

Applicant: Microwave Power Technology

Inventor： Robert J. Espinosa

IPC: H01J001/05

CPC classification number: B82Y10/00 ,  H01J3/021 ,  H01J2201/30469 ,  Y10S977/939

Abstract: An electron source including a nanostructured carbon electron-emitting film and an electron extraction grid spaced closely adjacent the surface of said film.

公开(公告)号：US20020190623A1

公开(公告)日：2002-12-19

申请号：US09881981

申请日：2001-06-14

Inventor： Zhizhang Chen ,  Ronald L. Enck ,  Sriram Ramamoorthi ,  Qin Liu

IPC: H01J001/00

CPC classification number: H01J3/02 ,  B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J3/021 ,  H01J9/022 ,  H01J2237/1205

Abstract: A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.

Abstract translation: 制造电子透镜的方法包括以下步骤：在电子发射体的发射体表面上施加聚合物层，然后固化聚合物层以降低挥发物含量。

公开(公告)号：US06441543B1

公开(公告)日：2002-08-27

申请号：US09016222

申请日：1998-01-30

Applicant: Zvi Yaniv ,  Ronald Charles Robinder

Inventor： Zvi Yaniv ,  Ronald Charles Robinder

IPC: H01J102

CPC classification number: H01J29/467 ,  H01J3/021 ,  H01J3/022 ,  H01J29/04 ,  H01J2329/00

Abstract: A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.

Abstract translation: 多个场发射器件阴极各自产生电子的发射，然后使用各种电极来控制和聚焦电子以产生电子束。 水平和垂直偏转技术类似于在阴极射线管内使用的技术，其操作是将各个电子束扫描到荧光屏的部分上以产生图像。 使用多个场致发射阴极提供比通常的阴极射线管更可能的屏幕深度。

公开(公告)号：US06440763B1

公开(公告)日：2002-08-27

申请号：US09813859

申请日：2001-03-22

Applicant: David S. Y. Hsu

Inventor： David S. Y. Hsu

IPC: H01L2100

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/021 ,  H01J2201/30469

Abstract: The present invention discloses a new field emitter cell and array consisting of groups of nanofilaments forming emitter cathodes. Control gates are microprocessed to be integrally formed with groups of nanofilament emitter cathodes on a substrate. Groups of nanofilaments are grown directly on the substrate material. As a result, the control gates and groups of nanofilaments are self-aligned with one another.

Abstract translation: 本发明公开了一种由形成发射极阴极的纳米丝组成的新的场发射极和阵列。 控制栅极被微处理以与衬底上的纳米丝发射极阴极的组一体形成。 纳米丝的组直接在基底材料上生长。 结果，控制门和纳米丝组彼此自对准。

公开(公告)号：US06310438B1

公开(公告)日：2001-10-30

申请号：US09132571

申请日：1998-08-12

Applicant: Shunji Tsuida ,  Hironori Imura ,  Hideo Makishima

Inventor： Shunji Tsuida ,  Hironori Imura ,  Hideo Makishima

IPC: H01J2534

CPC classification number: H01J23/02 ,  H01J3/021 ,  H01J23/06 ,  H01J25/34

Abstract: Expressing a perveance of an electron gun to be determined by a form of the electron gun as P&mgr;, a voltage to be impressed on an accelerating electrode Va and a beam current Ib, voltage Va which satisfies the following expression, Ib

Abstract translation: 通过电子枪的形式表示电子枪的外观为Pmu，施加在加速电极Va上的电压和束电流Ib，将满足下式的电压Va施加到加速电极 。 此外，加速电极的电位始终保持在电子管中的所有电极的最高水平。

公开(公告)号：US6064075A

公开(公告)日：2000-05-16

申请号：US196263

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。

公开(公告)号：US6024620A

公开(公告)日：2000-02-15

申请号：US196302

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：US5647785A

公开(公告)日：1997-07-15

申请号：US527520

申请日：1995-09-13

Applicant: Gary Wayne Jones ,  Ching-Tzong Sune

Inventor： Gary Wayne Jones ,  Ching-Tzong Sune

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/87 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/319

Abstract: A vertical microelectronic field emitter is formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.

Abstract translation: 通过在衬底的表面上首先形成尖端然后在衬底周围形成尖端的沟槽以在衬底中形成柱，其中尖端位于柱的顶部上，形成垂直微电子场发射器。 沟槽填充有电介质，并且在电介质上形成导体层。 或者，可以在衬底的表面形成沟槽，其中沟槽限定在衬底中的列。 然后，尖端形成在列的顶部。 沟槽用电介质填充，并且导体层形成在电介质上以形成提取电极。

公开(公告)号：US5536944A

公开(公告)日：1996-07-16

申请号：US424097

申请日：1995-04-19

Applicant: Katsuyoshi Tsunoda ,  Yoshinori Terui

Inventor： Katsuyoshi Tsunoda ,  Yoshinori Terui

IPC: H01J1/304 ,  H01J3/02 ,  H01J37/073 ,  H01J1/30 ,  H01J1/48

CPC classification number: H01J3/021 ,  H01J37/073 ,  H01J2201/317 ,  H01J2237/06316

Abstract: A thermal field emission electron gun has a thermal field emission cathode and a suppressor electrode wherein the thermal field emission cathode comprises a single crystal tungsten needle of an axis direction of and a coating layer composed of zirconium and oxygen, and the suppressor electrode is composed of either titanium or an alloy including titanium as the major component, of which hydrogen content is 60 ppm or less. Electron beams can be stably obtained with good reproducibility in a short time.

Abstract translation: 热场发射电子枪具有热场发射阴极和抑制电极，其中热场发射阴极包括轴向<100>的单晶钨针和由锆和氧组成的涂层，抑制电极 由钛或包含钛作为主要成分的合金构成，其氢含量为60ppm以下。 可以在短时间内以良好的再现性稳定地获得电子束。