公开(公告)号：US06852990B1

公开(公告)日：2005-02-08

申请号：US09896381

申请日：2001-06-29

Applicant: Zhiyong Zhao ,  David Hendrix

Inventor： Zhiyong Zhao ,  David Hendrix

IPC: H01J37/02 ,  H01J61/00

CPC classification number: H01J37/026 ,  H01J2237/0041

Abstract: A method for electrostatic discharge depolarization is implemented. The buildup of charge on tool structures in fabrication tools for semiconductor processing may be expected to be of concern whenever high voltage is employed near the structure in a tool. The process herein includes selectively exposing the structure to a plasma for a selected time interval. The duration of the exposure time interval is sufficient to reduce the polarization of the structure whereby the forces due to the polarization do not interfere with the transport or movement of a wafer being processed.

Abstract translation: 实现了静电放电去极化的方法。 只要在工具中的结构附近采用高电压，可以预期在半导体处理用制造工具中的工具结构上的电荷的积累。 本文的方法包括在所选择的时间间隔内将结构选择性地暴露于等离子体。 曝光时间间隔的持续时间足以减少结构的极化，由此由偏振引起的力不会干扰被处理的晶片的传输或移动。

公开(公告)号：US20040155185A1

公开(公告)日：2004-08-12

申请号：US10773330

申请日：2004-02-09

Inventor： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

IPC: G01N023/00

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J37/026 ,  H01J37/3056

Abstract: The present invention provides a very-reliable charging control technique without a process requiring experience and skill to suppress charging which occurs in the surface of a sample containing an insulating material, and provides an apparatus for a charged particle beam, of generally excellent analyzing and sample fabricating efficiency. In an apparatus for a charged particle beam having: a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted, the apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. A control for preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.

Abstract translation: 本发明提供了一种非常可靠的充电控制技术，没有需要经验和技术的工艺来抑制在包含绝缘材料的样品的表面中发生的充电，并且提供了一种通常优异的分析和样品的带电粒子束装置 制造效率。 一种带电粒子束的装置，具有：带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 以及安装有样品的样品保持器，该装置具有防止充电的电极，该电极被设置成能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制 施加到用于防止充电和移动的电极的电压。 通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来执行防止充电的控制。

公开(公告)号：US20040104657A1

公开(公告)日：2004-06-03

申请号：US10718777

申请日：2003-11-21

Inventor： Andreas Kyek

IPC: H01J001/02

CPC classification number: H01J43/02 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0045

Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

公开(公告)号：US20030085354A1

公开(公告)日：2003-05-08

申请号：US10180536

申请日：2002-06-27

Inventor： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

IPC: G01N023/225 ,  H01J037/256

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J37/026 ,  H01J37/3056

Abstract: The present invention provides a very-reliable charging control technique without a process requiring experience and skill to suppress charging which occurs in the surface of a sample containing an insulating material, and provides an apparatus for a charged particle beam, of generally excellent analyzing and sample fabricating efficiency. In an apparatus for a charged particle beam having: a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted, the apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. A control for preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.

Abstract translation: 本发明提供了一种非常可靠的充电控制技术，没有需要经验和技术的工艺来抑制在包含绝缘材料的样品的表面中发生的充电，并且提供了一种通常优异的分析和样品的带电粒子束装置 制造效率。 一种带电粒子束的装置，具有：带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 以及安装有样品的样品保持器，该装置具有防止充电的电极，该电极被设置成能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制 施加到用于防止充电和移动的电极的电压。 通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来执行防止充电的控制。

公开(公告)号：US06534775B1

公开(公告)日：2003-03-18

申请号：US09654380

申请日：2000-09-01

Applicant: Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

Inventor： Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

IPC: H01J3730

CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/3002 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.

Abstract translation: 用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。 夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。 下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。

公开(公告)号：US06515408B1

公开(公告)日：2003-02-04

申请号：US09700206

申请日：2001-02-15

Applicant: Jonathan Gerald England ,  Andrew Holmes ,  David Armour ,  Jaap Van Den Berg ,  Stephen Moffatt

Inventor： Jonathan Gerald England ,  Andrew Holmes ,  David Armour ,  Jaap Van Den Berg ,  Stephen Moffatt

IPC: H05H300

CPC classification number: H01J49/02 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041

Abstract: A source of thermionic electrons is provided inside the flight tube of a magnet, especially an analysing magnet, and extends along the beam flight path. This allows space charge to be neutralised along the beam's axis in spite of severely restricted electron mobility in this direction owing to the presence of substantially transverse magnetic field. Thermionically emitted electrons may contribute directly to the neutralisation of space charge in positive ion beams, or, in the case of negative ion beams, indirectly by ionizing residual or deliberately introduced neutral gas atoms or molecules. Examples are described and claimed in which the source is arranged outside the nominal beam envelope in the flight tube, but linked to the beam by magnetic flux generated in the flight tube. This reduces erosion of the source by the beam and so reduces beam contamination. In these examples, an important feature is the provision of electron repellers to reflect electrons back and forth across the beam. Alternative arrangements are described and claimed in which the source is positioned inside the beam. The thermionic electron source may comprise an array of filaments, and preferably is negatively biased with respect to the flight tube. Adjustment of this bias enables the energy of emitted electrons to be controlled.

Abstract translation: 在一个磁体的飞行管内部，特别是一个分析磁体的内部，设有一个热离子电子源，并沿着光束飞行路径延伸。 尽管由于存在基本上横向的磁场，但是在该方向上电子迁移率受到严格的限制，这允许空间电荷沿着光束的轴线被中和。 热离子发射的电子可以直接影响正离子束中的空间电荷的中和，或者在负离子束的情况下，间接地通过电离剩余或故意引入的中性气体原子或分子。 这些实施例被描述和要求保护，其中源被布置在飞行管中的标称束包络外部，但是通过在飞行管中产生的磁通量与束束相连。 这减少了光束对光源的侵蚀，从而减少了光束的污染。 在这些示例中，重要的特征是提供电子驱除器以反射来自横梁的电子。 描述和要求保护其中源位于梁内的替代布置。 热离子电子源可以包括长丝阵列，并且优选地相对于飞行管负偏压。 该偏置的调整使得能够控制发射电子的能量。

公开(公告)号：US06507029B1

公开(公告)日：2003-01-14

申请号：US09255700

申请日：1999-02-23

Applicant: Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

Inventor： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

IPC: H01J3730

CPC classification number: B82Y15/00 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/28

Abstract: In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Abstract translation: 在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。 使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。 在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。 这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。

公开(公告)号：US20020056814A1

公开(公告)日：2002-05-16

申请号：US09987112

申请日：2001-11-13

Applicant: NISSIN ELECTRIC CO., LTD.

Inventor： Shigeki Sakai ,  Tadashi Ikejiri

IPC: H01L021/66 ,  H01L021/42

CPC classification number: H01J37/026 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/2236

Abstract: When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of IE/IB is kept at a value not lower than 1.8, a ratio of II /IE is kept at a value not lower than 0.07 and not higher than 0.7, wherein IB is an electric current of the ion beam 14 irradiated onto the substrate 2, II is an ion current expressing a quantity of ions in the plasma 30 emitted from the plasma generating device 20, and IE is an electron current expressing a quantity of electrons in the plasma 30.

Abstract translation: 当将离子束14照射到基板2上以进行离子注入等处理时，从等离子体发生装置20发射的等离子体30被供给到靠近基板2的部分，以抑制由离子束照射引起的基板表面的电荷 。 IE / IB的比率保持在不低于1.8的值，II / IE的比率保持在不低于0.07且不高于0.7的值，其中IB是照射到 衬底2，II是表示从等离子体产生装置20发射的等离子体30中的离子量的离子电流，IE是表示等离子体30中的电子量的电子电流。

公开(公告)号：US06384408B1

公开(公告)日：2002-05-07

申请号：US09372478

申请日：1999-08-11

Applicant: Jason C. Yee ,  Laurence S. Hordon ,  Weidong Liu ,  David M. Goodstein

Inventor： Jason C. Yee ,  Laurence S. Hordon ,  Weidong Liu ,  David M. Goodstein

IPC: H01J4900

CPC classification number: H01J37/026 ,  H01J37/28 ,  H01J2237/2816 ,  H01J2237/30433

Abstract: A scanning electron microscope (SEM) is calibrated for the effects of local charging on a measured critical dimension (CD) of a wafer by first calibrating the microscope with respect to a calibration wafer with a known CD. Local charging on a wafer may be measured as a local landing energy (LLE) so that a scale factor based on a ratio of LLEs for the measurement wafer and a calibration wafer is used to correct a measured CD for the measurement wafer.

Abstract translation: 通过首先使用已知CD相对于校准晶片校准显微镜，对扫描电子显微镜（SEM）进行局部充电对晶片的测量临界尺寸（CD）的影响进行校准。 可以将晶片上的局部充电测量为局部着陆能量（LLE），使得基于用于测量晶片的LLE和校准晶片的比例的比例因子被用于校正测量晶片的测量CD。

公开(公告)号：US06362490B1

公开(公告)日：2002-03-26

申请号：US09266738

申请日：1999-03-12

Applicant: Hiroyuki Tomita ,  Kazuo Mera

Inventor： Hiroyuki Tomita ,  Kazuo Mera

IPC: H01J37304

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0044

Abstract: In an ion implanter, in order to direct an ion beam from an ion generation source toward a silicon wafer to implant ions into the wafer, a filament as an electron source is heated to emit electrons and then electrons are converted to an electron beam. At this time, a magnetic field is applied from a magnetic circuit to both of the electron beam and a tungsten ion beam of tungsten ions emitted therefrom together with electrons to deflect the both beams depending on their masses and to separate the both beams into the electron beam and tungsten ion beam, tungsten ions in the tungsten ion beam are trapped by a silicon plate to irradiate only the electron beam onto the silicon wafer and to neutralize the silicon wafer to be charged.

Abstract translation: 在离子注入机中，为了将来自离子发生源的离子束朝向硅晶片引导以将离子注入到晶片中，将作为电子源的细丝加热以发射电子，然后将电子转换成电子束。 此时，从磁路向电子束和从电子发射的钨离子的钨离子束与电子一起施加磁场，以根据其质量偏转两个光束并将两个光束分离成电子 光束和钨离子束，钨离子束中的钨离子被硅板捕获，仅将电子束照射到硅晶片上，并中和被充电的硅晶片。