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公开(公告)号：US20230386804A1
公开(公告)日：2023-11-30
申请号：US18232834
申请日：2023-08-11
Applicant: Tokyo Electron Limited
Inventor： Toshimasa KOBAYASHI , Kazuki TAKAHASHI
CPC classification number: H01J37/32844 , H01J37/3244 , B01D53/0407 , H01J37/32229 , H01J37/32871 , B01D2253/34 , H01J37/32311
Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.
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公开(公告)号：US11661651B2
公开(公告)日：2023-05-30
申请号：US17838805
申请日：2022-06-13
Applicant: APPLIED MATERIALS, INC.
Inventor： Chao Du , Xing Chen , Keith A. Miller , Jothilingam Ramalingam , Jianxin Lei
CPC classification number: C23C14/3414 , C23C14/022 , C23C14/5846 , C23C14/5873 , H01J37/32449 , H01J37/32844 , H01J37/32981
Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.
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公开(公告)号：US20180233333A1
公开(公告)日：2018-08-16
申请号：US15952168
申请日：2018-04-12
Applicant: MKS Instruments, Inc.
Inventor： Xing Chen , Ilya Pokidov , Feng Tian , Ken Tran , David Lam , Kevin W. Wenzel
CPC classification number: H01J37/32449 , B01D53/323 , B01D53/76 , B01D2257/2064 , H01J37/32339 , H01J37/32357 , H01J37/32458 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J37/32935 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4667 , H05H2245/121 , Y02C20/30
Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.
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公开(公告)号：US09991098B2
公开(公告)日：2018-06-05
申请号：US15484072
申请日：2017-04-10
Applicant: MKS Instruments, Inc.
Inventor： Xing Chen , Ilya Pokidov , Feng Tian , Ken Tran , David Lam , Kevin W. Wenzel
CPC classification number: H01J37/32449 , B01D53/323 , B01D53/76 , B01D2257/2064 , H01J37/32339 , H01J37/32357 , H01J37/32458 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J37/32935 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4667 , H05H2245/121 , Y02C20/30
Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.
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公开(公告)号：US09867238B2
公开(公告)日：2018-01-09
申请号：US13860572
申请日：2013-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Michael S. Cox , Colin John Dickinson
CPC classification number: H05B6/36 , F01N3/0275 , F01N2240/28 , H01J37/32834 , H01J37/32844 , H05H1/46 , H05H2001/4667 , H05H2245/1215 , Y02C20/30
Abstract: In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.
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Patent Agency Ranking
公开(公告)号：US09767990B2
公开(公告)日：2017-09-19
申请号：US15188504
申请日：2016-06-21
Applicant: APPLIED MATERIALS, INC.
Inventor： Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC classification number: H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
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公开(公告)号：US20170200591A1
公开(公告)日：2017-07-13
申请号：US15404457
申请日：2017-01-12
Applicant: MKS Instruments, Inc.
Inventor： Gordon Hill , Scott Benedict , Kevin Wenzel
CPC classification number: H01J37/32862 , F16K1/22 , F16K3/06 , F16K15/026 , F16K51/02 , H01J37/32348 , H01J37/32568 , H01J37/32844 , H01J37/32963 , Y02C20/30
Abstract: A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.
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公开(公告)号：US09630142B2
公开(公告)日：2017-04-25
申请号：US14212398
申请日：2014-03-14
Applicant: MKS Instruments, Inc.
Inventor： Xing Chen , Ilya Pokidov , Feng Tian , Ken Tran , David Lam , Kevin W. Wenzel
CPC classification number: H01J37/32449 , B01D53/323 , B01D53/76 , B01D2257/2064 , H01J37/32339 , H01J37/32357 , H01J37/32458 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J37/32935 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4667 , H05H2245/121 , Y02C20/30
Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.
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公开(公告)号：US20160300692A1
公开(公告)日：2016-10-13
申请号：US15188504
申请日：2016-06-21
Applicant: APPLIED MATERIALS, INC.
Inventor： JIBING ZENG , BRIAN T. WEST , RONGPING WANG , MANOJ A. GAJENDRA
IPC: H01J37/32
CPC classification number: H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，一种用于处理衬底处理系统的导管中的气体的装置包括：电介质管，被配置为耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管 具有锥形侧壁; 以及围绕电介质管的锥形侧壁的外表面缠绕的射频（RF）线圈。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。
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公开(公告)号：US09378928B2
公开(公告)日：2016-06-28
申请号：US14445965
申请日：2014-07-29
Applicant: APPLIED MATERIALS, INC.
Inventor： Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC classification number: H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，用于处理衬底处理系统的导管中的气体的装置包括：电介质管，其被耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。
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