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    Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing
    72.
    发明授权
    Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing 有权
    微电机械开关梁结构，最小化波束失真和构造方法

    公开(公告)号：US09230751B2

    公开(公告)日：2016-01-05

    申请号：US14150513

    申请日：2014-01-08

    Applicant: Analog Devices, Inc.

    Inventor： Denis Ellis ,  Padraig Fitzgerald ,  Jo-ey Wong ,  Raymond Goggin ,  Richard Tarik Eckl

    IPC: H01H51/22 ,  H01H11/00 ,  H01H59/00 ,  H01H1/00 ,  B81B3/00

    CPC classification number: H01H11/00 ,  B81B3/0081 ,  B81B2201/014 ,  H01H1/0036 ,  H01H59/0009 ,  Y10T29/49002 ,  Y10T29/49105

    Abstract: Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate, the anchor having a width. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a charge differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.

    Abstract translation: 公开了一种微电子机械开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。 开关结构包括梁构件，锚固件和铰链。 所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。 所述锚将所述开关结构耦合到所述基底，所述锚具有宽度。 铰链将梁构件沿着锚固件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电荷差异而弯曲。 开关结构在靠近铰链的区域中在基板和锚之间具有间隙。

    Shunt switch at common port to reduce hot switching
    73.
    发明授权
    Shunt switch at common port to reduce hot switching 有权
    在公共端口分流开关，以减少热切换

    公开(公告)号：US09156677B2

    公开(公告)日：2015-10-13

    申请号：US13764324

    申请日：2013-02-11

    Applicant: RF Micro Devices, Inc.

    Inventor： Ruediger Bauder ,  Nadim Khlat ,  Julio Costa ,  Jonathan Hammond

    IPC: H03F1/50 ,  B81B7/00 ,  H04W52/02

    CPC classification number: B81B7/0022 ,  B81B2201/014 ,  B81C1/00976 ,  H01H59/0009 ,  H04W52/02

    Abstract: Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened).

    Abstract translation: 导向开关电路将微机电系统（MEMS）开关的热节点（注入节点）接地，以在MEMS开关打开或关闭时减少或消除悬臂触点和端子触点之间的电弧。 在MEMS悬臂接触之前，期间和之后，导频开关电路将热节点接地，并且MEMS的端子接触彼此接触（当MEMS开关闭合时）。 此外，导频开关电路在MEMS的彼此脱离接合之前，之中和之后，以及MEMS的彼此脱离接合（当MEMS开关断开时）接地。

    Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme
    74.
    发明授权
    Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme 有权
    采用分层悬臂沉积方案制造基于MEMS的悬臂开关

    公开(公告)号：US08957485B2

    公开(公告)日：2015-02-17

    申请号：US12357340

    申请日：2009-01-21

    Applicant: Joseph Damian Gordon Lacey

    Inventor： Joseph Damian Gordon Lacey

    IPC: H01L29/84 ,  B81B3/00 ,  H01L41/09

    CPC classification number: B81B3/007 ,  B81B2201/014 ,  B81B2203/0118 ,  H01L41/094

    Abstract: Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a ‘split layer’ cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.

    Abstract translation: 本文讨论的实施方案通常公开了可用于克服在用于薄膜MEMS悬臂开关的难熔材料中形成的梯度应力的新型替代方法。 如本文所述使用“分裂层”悬臂制造方法，可以制造薄膜MEMS悬臂开关，从而产生低工作电压装置，同时保持最终制造的悬臂开关的着陆部分的机械刚性。

    MEMS switches and fabrication methods
    76.
    发明授权
    MEMS switches and fabrication methods 有权
    MEMS开关和制造方法

    公开(公告)号：US08829626B2

    公开(公告)日：2014-09-09

    申请号：US14017646

    申请日：2013-09-04

    Applicant: International Buisness Machines Corporation

    Inventor： Jeffrey P. Gambino ,  Stephen A. Mongeon

    IPC: H01L27/14 ,  H01L29/84 ,  G01P15/08

    CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2203/051 ,  B81C1/00293 ,  B81C2203/0145 ,  H01H2001/0052 ,  H01H2059/0027

    Abstract: MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections.

    Abstract translation: MEMS开关和制造MEMS开关的方法。 开关具有垂直取向的偏转电极，其具有由支撑层支撑的导电层，至少一个驱动电极和固定电极。 施加到驱动电极的致动电压导致偏转电极横向偏转并接触闭合开关的固定电极。 当去除致动电压时，偏转电极恢复到垂直位置，从而打开开关。 制造MEMS开关的方法包括在心轴上沉积导电层以限定垂直电极，然后通过去除心轴和层端部来释放偏转电极。

    ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
    77.
    发明申请
    ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF 有权
    电子设备及其制造方法

    公开(公告)号：US20140203424A1

    公开(公告)日：2014-07-24

    申请号：US14251004

    申请日：2014-04-11

    Applicant: FUJITSU LIMITED

    Inventor： Takeaki Shimanouchi

    IPC: H01L23/04 ,  H01L23/00

    CPC classification number: H01L23/04 ,  B23K1/0016 ,  B23K2101/42 ,  B81B7/0041 ,  B81B2201/014 ,  B81C1/00873 ,  H01L21/50 ,  H01L23/10 ,  H01L24/94 ,  H01L2924/1461 ,  H03H3/0072 ,  H03H9/1057 ,  H01L2924/00

    Abstract: An electronic device includes a substrate; an element configured to be formed on the substrate; a sidewall member configured to enclose the element on the substrate; a cover member configured to be disposed on the sidewall member, and to partition a space around the element along with the sidewall member on the substrate; and a seal member configured to be disposed outside of the sidewall member, to bond the sidewall member and the cover member to a surface of the substrate, and to seal the space.

    Abstract translation: 电子装置包括：基板; 构造成形成在所述基板上的元件; 侧壁构件，其构造成将所述元件包围在所述基板上; 覆盖构件，其构造成设置在所述侧壁构件上，并且将所述元件周围的空间与所述侧壁构件分隔在所述基板上; 以及密封构件，其构造成设置在所述侧壁构件的外侧，以将所述侧壁构件和所述盖构件结合到所述基板的表面，并且密封所述空间。

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