公开(公告)号：US20070116406A1

公开(公告)日：2007-05-24

申请号：US11603063

申请日：2006-11-22

Applicant: Yu Yonezawa ,  Naoyuki Mishima ,  Tadashi Nakatani ,  Anh Nguyen ,  Satoshi Ueda

Inventor： Yu Yonezawa ,  Naoyuki Mishima ,  Tadashi Nakatani ,  Anh Nguyen ,  Satoshi Ueda

IPC: G02B6/26

CPC classification number: B81B3/0086 ,  B81B2201/018 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3584 ,  H01H59/0009 ,  H01H2059/0054

Abstract: A switch includes multiple torsion springs with each of one ends thereof secured to a substrate, a beam portion, to which each of the other ends of the multiple torsion springs is secured, and which is swung by an electrostatic actuator, and a switch contact portion in which a first contact provided at the beam portion and a second contact secured to the substrate are in connection or disconnection.

Abstract translation: 开关包括多个扭转弹簧，其一端中的每一个固定到基底，梁部分，多个扭转弹簧的另一端的每个固定到所述梁部分，并且由静电致动器摆动，并且开关接触部分 其中设置在所述梁部分处的第一触点和固定到所述基板的第二触头是连接或断开的。

公开(公告)号：US20050269688A1

公开(公告)日：2005-12-08

申请号：US11144429

申请日：2005-06-02

Applicant: Lior Shiv

Inventor： Lior Shiv

IPC: B81B7/00 ,  H01H1/00 ,  H01L23/12

CPC classification number: B81B7/0041 ,  B81B7/007 ,  B81B2201/018 ,  H01H1/0036

Abstract: A package for a MEMS device includes a semiconductor cap structure and a lid substrate that define an encapsulated area within which the MEMS device is located. Feed-through metallization hermetically seals micro-vias in the semiconductor cap structure and extends through the semiconductor cap structure to provide interconnections coupled electrically to the MEMS device and to an exterior of the semiconductor cap structure.

Abstract translation: 用于MEMS器件的封装包括限定MEMS器件所在的封装区域的半导体盖结构和盖基板。 直通金属化气密地密封半导体盖结构中的微通孔并且延伸穿过半导体帽结构以提供电耦合到MEMS器件和半导体帽结构的外部的互连。

公开(公告)号：US06939784B2

公开(公告)日：2005-09-06

申请号：US10820761

申请日：2004-04-09

Applicant: Li-Shu Chen ,  Philip C. Smith ,  Thomas J. Moloney ,  Howard Fudem

Inventor： Li-Shu Chen ,  Philip C. Smith ,  Thomas J. Moloney ,  Howard Fudem

IPC: B81B7/00 ,  H01L21/50 ,  H01L23/10 ,  H01L21/30 ,  H01L21/48

CPC classification number: H01L23/10 ,  B81B2201/018 ,  B81B2207/097 ,  B81C1/00301 ,  B81C2203/0118 ,  H01L21/50 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like number of locations each including one or more cavities to accommodate the electronic circuit and associated signal lines. The cover wafer includes a plurality of vias for making electrical connection to the signal lines. A multi layer metallic arrangement hermetically seals the periphery of each location as well as sealing the bottom of each via. The joined base and cover wafers may then be diced to form individual die packages.

Abstract translation: 多个电子电路和相关联的信号线位于基底晶片上的相应位置。 安装在基底晶片上方的覆盖晶片包括相应的相似数量的位置，每个位置包括一个或多个空腔以容纳电子电路和相关联的信号线。 覆盖晶片包括用于与信号线进行电连接的多个通孔。 多层金属装置密封每个位置的周边以及密封每个通孔的底部。 然后可以将接合的基底和覆盖晶片切割成单独的管芯封装。

公开(公告)号：US20050168306A1

公开(公告)日：2005-08-04

申请号：US11088411

申请日：2005-03-23

Applicant: Michael Cohn ,  Ji-Hai Xu

Inventor： Michael Cohn ,  Ji-Hai Xu

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01H59/00 ,  H01H51/22 ,  H01H1/66 ,  H01H51/00 ,  H01L21/30 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01H59/0009 ,  B81B7/0077 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/093 ,  B81C1/00301 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch. Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.

公开(公告)号：US20050032379A1

公开(公告)日：2005-02-10

申请号：US10941350

申请日：2004-09-14

Applicant: Marvin Wong ,  Paul Carson

Inventor： Marvin Wong ,  Paul Carson

IPC: H01H29/30 ,  B81C1/00 ,  H01H1/00 ,  H01H29/06 ,  B05D3/12 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00611 ,  B81B2201/018 ,  B81C2201/0121 ,  H01H1/0036 ,  H01H2029/008

Abstract: A method for depositing material on a channel plate such that the material is registered to one or more channels formed in the channel plate includes filling at least one of the channels with a resist that is not wetted by the material; depositing the material on at least a region of the channel plate that includes at least part of the resist, the material registering with at least one channel edge as a result of the material's abutment to the resist; and then removing the resist. The method may be used, in one embodiment, to apply an adhesive or gasket material that is used in assembling a switch.

Abstract translation: 一种用于在通道板上沉积材料使得该材料与通道板中形成的一个或多个通道对准的方法包括用未被该材料润湿的抗蚀剂填充至少一个通道; 在包括至少部分抗蚀剂的通道板的至少一个区域上沉积材料，由于材料与抗蚀剂的邻接，材料与至少一个通道边缘配准; 然后除去抗蚀剂。 在一个实施例中，可以使用该方法来施加用于组装开关的粘合剂或垫圈材料。

公开(公告)号：US20040188821A1

公开(公告)日：2004-09-30

申请号：US10396572

申请日：2003-03-26

Inventor： Li-Shu Chen ,  Philip C. Smith ,  Thomas J. Moloney ,  Howard Fudem

IPC: H01L027/14

CPC classification number: H01L23/10 ,  B81B2201/018 ,  B81B2207/097 ,  B81C1/00301 ,  B81C2203/0118 ,  H01L21/50 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like number of locations each including one or more cavities to accommodate the electronic circuit and associated signal lines. The cover wafer includes a plurality of vias for making electrical connection to the signal lines. A multi layer metallic arrangement hermetically seals the periphery of each location as well as sealing the bottom of each via. The joined base and cover wafers may then be diced to form individual die packages.

Abstract translation: 多个电子电路和相关联的信号线位于基底晶片上的相应位置。 安装在基底晶片上方的覆盖晶片包括相应的相似数量的位置，每个位置包括一个或多个空腔以容纳电子电路和相关联的信号线。 覆盖晶片包括用于与信号线进行电连接的多个通孔。 多层金属装置密封每个位置的周边以及密封每个通孔的底部。 然后可以将接合的基底和覆盖晶片切割成单独的管芯封装。

公开(公告)号：US06770569B2

公开(公告)日：2004-08-03

申请号：US10210315

申请日：2002-08-01

Applicant: Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

Inventor： Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

IPC: H01L2131

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Abstract translation: 提供了一种用于制造MEMS结构（69）的方法。 根据该方法，提供具有沉积在其上的互连金属（53）的CMOS基板（51）。 通过等离子体辅助化学气相沉积（PACVD）在由硅和硅 - 锗合金组成的组中选择的材料在衬底上产生MEMS结构。 使用PACVD的低沉积温度允许这些材料用于集成CMOS工艺后端的MEMS制造。

公开(公告)号：US20040066258A1

公开(公告)日：2004-04-08

申请号：US10608294

申请日：2003-06-27

Inventor： Michael B. Cohn ,  Ji-Hai Xu

IPC: H01H051/22

CPC classification number: H01H59/0009 ,  B81B7/0077 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/093 ,  B81C1/00301 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch. Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.

Abstract translation: 公开了MEMS器件及其制造方法。 在一个实施例中，微型开关包括基座组件，其包括承载接触垫的可移动结构。 基座组件被晶片刻度结合到包括激活器和信号路径的盖组件。 可移动结构在接合过程中形成的密封空腔内移动。 信号路径包括输入线和由间隙分开的输出线，当开关被去激活时，该线路防止信号通过微型开关传播。 在操作中，信号被发射到信号路径中。 当微动开关被激活时，致动器建立一个力，致动器将可移动结构的一部分朝向信号路径中的间隙向上拉，直到接触垫桥接输入线和输出线之间的间隙，从而允许 信号通过微型开关传播。 在结合之前，MEMS结构在第一晶片上退火，并且导电迹线和其它金属在第二晶片上进行退火，以允许使用不同工艺（例如不同的退火温度）分别对每个晶片进行加工。

公开(公告)号：US06701779B2

公开(公告)日：2004-03-09

申请号：US10104972

申请日：2002-03-21

Applicant: Richard P. Volant ,  Robert A. Groves ,  Kevin S. Petrarca ,  David M. Rockwell ,  Kenneth J. Stein

Inventor： Richard P. Volant ,  Robert A. Groves ,  Kevin S. Petrarca ,  David M. Rockwell ,  Kenneth J. Stein

IPC: G01P1500

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00214 ,  H01H2001/0068 ,  H01H2059/0054

Abstract: A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.

Abstract translation: 描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。 扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。 制造扭转MEM开关的方法与CMOS制造工艺完全兼容。

公开(公告)号：US20010048141A1

公开(公告)日：2001-12-06

申请号：US09741128

申请日：2000-12-19

Inventor： Tsen-Hwang Lin ,  Yu-Pei Chen ,  Darius L. Crenshaw

IPC: H01L029/82 ,  H01L031/075 ,  H01L031/105 ,  H01L031/117

CPC classification number: B81C1/00182 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/127

Abstract: A microelectromechanical switch includes a substrate, an insulator layer disposed outwardly from the substrate, and an electrode disposed outwardly from the insulator layer. The switch also includes a dielectric layer disposed outwardly from the insulator layer and the electrode, the dielectric layer having a dielectric constant of greater than or equal to twenty. The switch also includes a membrane layer disposed outwardly from the dielectric layer, the membrane layer overlying a support layer, the support layer operable to space the membrane layer outwardly from the dielectric layer.

Abstract translation: 微机电开关包括衬底，从衬底向外设置的绝缘体层以及从绝缘体层向外设置的电极。 开关还包括从绝缘体层和电极向外设置的电介质层，电介质层的介电常数大于或等于二十。 所述开关还包括从所述电介质层向外设置的膜层，所述膜层覆盖在支撑层上，所述支撑层可操作以将所述膜层从所述电介质层向外空间。