公开(公告)号：US09866938B2

公开(公告)日：2018-01-09

申请号：US15015973

申请日：2016-02-04

Applicant: Knowles Electronics, LLC

Inventor： Robert Popper ,  Dibyendu Nandy ,  Ramanujapuram Raghuvir ,  Sarmad Qutub ,  Oddy Khamharn

IPC: H04R3/00 ,  H04R1/04 ,  H04R19/00

CPC classification number: H04R1/04 ,  B81B7/008 ,  B81B2201/0257 ,  H04R3/005 ,  H04R19/005 ,  H04R2201/003 ,  H04R2420/07

Abstract: A microphone system includes a first transducer deployed at a first microphone; a second transducer deployed at a second microphone, the first microphone being physically distinct from the second microphone; a decimator deployed at the second microphone that receives first pulse density modulation (PDM) data from the first transducer and second PDM data from the second transducer and decimates and combines the first PDM data and the second PDM data into combined pulse code modulation (PCM) data; and an interpolator deployed at the second microphone for converting the combined PCM data to combined PDM data, and transmits the combined PDM data to an external processing device.

公开(公告)号：US20180007474A1

公开(公告)日：2018-01-04

申请号：US15636121

申请日：2017-06-28

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott Lyall CARGILL ,  Colin Robert JENKINS ,  Euan James BOYD

IPC: H04R19/04 ,  B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R7/18

CPC classification number: H04R19/04 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00666 ,  H04R7/04 ,  H04R7/18 ,  H04R17/02 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS transducer structure comprises a substrate comprising a cavity. A membrane layer is supported relative to the substrate to provide a flexible membrane. A peripheral edge of the cavity defines at least one perimeter region that is convex with reference to the center of the cavity. The peripheral edge of the cavity may further define at least one perimeter region that is concave with reference to the center of the cavity.

公开(公告)号：US20180002159A1

公开(公告)日：2018-01-04

申请号：US15543467

申请日：2016-01-25

Applicant: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.

Inventor： Scott Lyall CARGILL ,  Colin Robert JENKINS ,  Euan James BOYD ,  Richard Ian LAMING

IPC: B81B3/00 ,  H04R19/04 ,  H04R19/00

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00182 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15151 ,  H04R19/005 ,  H04R19/04 ,  H01L2924/00014

Abstract: The application describes MEMS transducer having a flexible membrane and which seeks to alleviate and/or redistribute stresses within the membrane layer. A membrane having a first/active region and a second/inactive region is described.

公开(公告)号：US20170339494A1

公开(公告)日：2017-11-23

申请号：US15365590

申请日：2016-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Matteo PERLETTI ,  Igor VARISCO ,  Luca LAMAGNA ,  Silvia ADORNO ,  Gabriele GATTERE ,  Carlo VALZASINA ,  Sebastiano CONTI

IPC: H04R19/00 ,  B81B3/00 ,  G01H11/06 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.

公开(公告)号：US20170339477A1

公开(公告)日：2017-11-23

申请号：US15416744

申请日：2017-01-26

Applicant: Kai Wang ,  Hu Chen ,  Guojun Liu

Inventor： Kai Wang ,  Hu Chen ,  Guojun Liu

IPC: H04R1/04 ,  H04R29/00 ,  B81B7/00 ,  H04R19/04

CPC classification number: H04R1/04 ,  B81B7/0087 ,  B81B2201/0257 ,  B81B2207/012 ,  H04R19/005 ,  H04R19/04 ,  H04R29/004 ,  H04R2201/003

Abstract: A MEMS microphone is disclosed. The MEMS microphone includes an encapsulation structure provided with an accommodation space; a MEMS chip for detecting sound signal accommodated in the accommodation space; an ASIC chip received in the accommodation space. The ASIC chip includes a signal processing module connected to MEMS chip for processing the sound signal detected by the MEMS chip and outputting the processed sound signal. The MEMS microphone further includes a temperature detection module for detecting temperature signal and outputting the temperature signal.

公开(公告)号：US20170329427A1

公开(公告)日：2017-11-16

申请号：US15516119

申请日：2015-09-29

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Takehito KOZASA ,  Manabu YOSHIDA

IPC: G06F3/041 ,  H01L29/84 ,  H01L29/82 ,  G06F3/01 ,  H01L29/51 ,  H01L21/31 ,  G01P15/08 ,  G06F3/0354 ,  H01L41/113 ,  H01L29/78

CPC classification number: G06F3/041 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L1/2293 ,  G01P15/08 ,  G06F3/016 ,  G06F3/03545 ,  G06F3/044 ,  H01G7/02 ,  H01L21/31 ,  H01L29/513 ,  H01L29/78 ,  H01L29/82 ,  H01L29/84 ,  H01L41/1132 ,  H03K17/955 ,  H03K17/975

Abstract: Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.

公开(公告)号：US09809448B2

公开(公告)日：2017-11-07

申请号：US14618251

申请日：2015-02-10

Applicant: INVENSENSE, INC.

Inventor： Martin Lim ,  Fariborz Assaderaghi

IPC: H01L29/82 ,  B81B7/00 ,  G01L23/12 ,  H04R19/00 ,  B81B7/02

CPC classification number: B81B7/0061 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  G01L23/125 ,  H04R19/005

Abstract: A micro electro-mechanical system (MEMS) device is provided. The MEMS device includes: a substrate having a first surface and a second surface and wherein the first surface is exposed to an environment outside the MEMS device; and a MEMS microphone disposed at a first location on the second surface of the substrate and having a diaphragm positioned such that acoustic waves received at the MEMS microphone are incident on the diaphragm. The MEMS device also includes: a first integrated circuit disposed at a second location of the substrate, wherein the first integrated circuit is electrically coupled to the MEMS microphone; and a MEMS measurement device at a third location, wherein the MEMS measurement device comprises a motion sensor and a pressure sensor.

公开(公告)号：US20170313579A1

公开(公告)日：2017-11-02

申请号：US15362556

申请日：2016-11-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Omar GHIDONI ,  Roberto BRIOSCHI

IPC: B81B7/02 ,  H04R1/04

CPC classification number: B81B7/02 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/096 ,  B81C1/0023 ,  H04R1/04 ,  H04R1/406 ,  H04R19/005 ,  H04R2201/003

Abstract: A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

公开(公告)号：US09807516B2

公开(公告)日：2017-10-31

申请号：US14832913

申请日：2015-08-21

Applicant: Chao Wang ,  Bin Xu

Inventor： Chao Wang ,  Bin Xu

IPC: H04R1/04 ,  H04R19/04 ,  B81B7/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B7/0064 ,  B81B2201/0257 ,  B81B2207/012 ,  H04R19/005 ,  H04R2201/003 ,  H04R2209/022

Abstract: A micro-electro-mechanical system (MEMS) microphone package is provided in the present disclosure. The MEMS microphone package includes a circuit board, an electromagnetic shielding cover mounted on the circuit board to define an accommodating space, electronic components received in the accommodating space and electrically connected to the circuit board, and a shielding ring covering a joint between the electromagnetic shielding cover and the circuit board. The shielding ring is configured for preventing electromagnetic waves from entering the accommodating space via the joint between the electromagnetic shielding cover and the circuit board.

公开(公告)号：US09802815B2

公开(公告)日：2017-10-31

申请号：US14957562

申请日：2015-12-02

Applicant: Invensense, Inc.

Inventor： Michael Julian Daneman ,  Mei-Lin Chan ,  Martin Lim ,  Fariboz Assaderaghi ,  Erhan Polatkan Ata

IPC: H01L21/33 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/112 ,  B81C2203/0118 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L2224/83805

Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.