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    TRENCH BASED CAPACITIVE HUMIDITY SENSOR
    72.
    发明申请
    TRENCH BASED CAPACITIVE HUMIDITY SENSOR 审中-公开

    公开(公告)号：US20170082567A1

    公开(公告)日：2017-03-23

    申请号：US13832904

    申请日：2013-03-15

    Applicant: Robert Bosch Gmbh

    Inventor： Gary O'Brien ,  Ando Feyh ,  Andrew Graham ,  Ashwin Samarao ,  Gary Yama

    IPC: G01N27/22 ,  B81B7/00

    CPC classification number: G01N27/223 ,  B81B7/0006 ,  B81B2201/0292 ,  G01N27/225

    Abstract: A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES
    75.
    发明申请
    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES 有权
    在不同气体和气压下封装多个MEMS传感器和执行器的方法

    公开(公告)号：US20160039666A1

    公开(公告)日：2016-02-11

    申请号：US14887631

    申请日：2015-10-20

    Applicant: mCube Inc.

    Inventor： WENHUA ZHANG ,  Shingo Yoneoka

    IPC: B81B7/02 ,  B81B7/00

    CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

    Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

    Abstract translation: 具有多个MEMS（微电子机械系统）器件的半导体器件包括具有第一MEMS器件和第二MEMS器件的半导体衬底，以及具有形成第一腔和第二腔的顶部和侧壁的封装衬底。 封装衬底在侧壁处结合到半导体衬底以将第一MEMS器件封装在第一腔中并将第二MEMS器件封装在第二腔中。 第二腔包括在封装衬底的侧壁中的与封装衬底和半导体衬底之间的界面相邻的凹陷区域处的至少一个存取通道。 通道被薄膜覆盖。 第一空腔处于第一大气压，第二空腔处于第二大气压。 第二空气压力与第一气压不同。

    Micromechanical sensor apparatus with a movable gate, and corresponding production process
    79.
    发明授权
    Micromechanical sensor apparatus with a movable gate, and corresponding production process 有权
    具有可移动门的微机械传感器装置及相应的生产工艺

    公开(公告)号：US08975669B2

    公开(公告)日：2015-03-10

    申请号：US13774052

    申请日：2013-02-22

    Applicant: Robert Bosch GmbH

    Inventor： Oleg Jakovlev ,  Alexander Buhmann ,  Ando Feyh

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0086 ,  B81B3/0021 ,  B81B2201/0292 ,  B81C1/00698

    Abstract: A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.

    Abstract translation: 微机械传感器装置具有可移动栅极和场效应晶体管。 场效应晶体管具有漏极区域，源极区域，具有第一掺杂型的中间沟道区域以及通过中间空间与沟道区域分离的可移动栅极。 漏极区域，源极区域和沟道区域布置在衬底中。 保护区域至少在沟道区的纵向侧设置在衬底中，并且具有与第一掺杂类型相同并且具有较高掺杂浓度的第二掺杂类型。

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