Abstract:
A semiconductor device package includes a carrier, a sensor element disposed on or within the carrier, a cover and a filter. The cover includes a base substrate and a periphery barrier. The base substrate includes an inner sidewall. The inner sidewall of the base substrate defines a penetrating hole extending from a top surface of the base substrate to a bottom surface of the base substrate; at least a portion of the inner sidewall of the base substrate is tilted. The periphery barrier is coupled to the bottom surface of the base substrate and contacts a top surface of the carrier. The filter is disposed on the top surface of the base substrate and covers the penetrating hole.
Abstract:
A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.
Abstract:
A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using wire bonds is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A conductive stud or external wire bond electrically coupled with the integrated circuit die and extending vertically up is formed. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die, and with a top surface approximately coplanar with a top surface of the conductive stud or external wire bond, is formed. The structure resulting from application of the method is also provided.
Abstract:
A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using wire bonds is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A conductive stud or external wire bond electrically coupled with the integrated circuit die and extending vertically up is formed. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die, and with a top surface approximately coplanar with a top surface of the conductive stud or external wire bond, is formed. The structure resulting from application of the method is also provided.
Abstract:
A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.
Abstract:
Methods and apparatus for ultrasound imaging using ultrasound sensor elements comprising thin film transistors. Specifically, ultrasound elements for use in a two dimensional array of ultrasound elements, two dimensional arrays of ultrasound elements, ultrasound sensor element array assemblies, ultrasound imaging devices and methods of performing an ultrasound scan using a two dimensional array of ultrasound elements. A sensor element comprises: an ultrasound transducer, a transmit circuit configured to provide an electrical signal to the transducer for output of an ultrasound signal; and a receive circuit configured to receive an electrical signal from the transducer, based on a received reflected ultrasound signal, wherein the transmit and receive circuits each comprise one or more thin film transistors.
Abstract:
A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.
Abstract:
A method for producing a functional unit with a gas converter (1) and a flame ionization detector (10) is produced with the gas converter (1) and the flame ionization detector (10) being connected together as parts of a multi-layer ceramic (6).
Abstract:
A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.
Abstract:
A device including a first substrate in which a functional element and an electrode are formed; a second substrate in which a through electrode is formed; a joining material that joins the first substrate and the second substrate while reserving a predetermined space between the functional element and the second substrate; and a conductive material that electrically connects the electrode to the through electrode. Here, the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.