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    Method Of Fabricating A Printhead IC
    72.
    发明申请
    Method Of Fabricating A Printhead IC 审中-公开
    制造打印头IC的方法

    公开(公告)号：US20100072171A1

    公开(公告)日：2010-03-25

    申请号：US12626928

    申请日：2009-11-29

    Applicant: Kia Silverbrook

    Inventor： Kia Silverbrook

    IPC: G03F7/20 ,  C23F1/02

    CPC classification number: B81C1/00142 ,  B41J2/1404 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/052

    Abstract: Provided is a method of fabricating a printhead integrated circuit (IC). The method includes the step of depositing metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched into the silicon wafer substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads for operatively connecting a microprocessor. A step of etching portions adjacent the pit to expose the outermost metal layer to define electrode portions. The electrode portions are for supporting a heater element to be suspended in the pit.

    Abstract translation: 提供了一种制造打印头集成电路（IC）的方法。 该方法包括将散布有层间电介质（ILD）层的金属层沉积到硅晶片衬底上的步骤。 钝化层沉积在最外层的金属层上，钝化层的至少一部分被光刻胶掩蔽。 凹坑被蚀刻到硅晶片衬底中，所述凹坑具有基底和侧壁。 沿着衬底的边缘进行蚀刻以露出最后的金属层以限定用于可操作地连接微处理器的接合焊盘。 蚀刻邻近凹坑的部分以露出最外层金属层以限定电极部分的步骤。 电极部分用于支撑要悬挂在凹坑中的加热器元件。

    Method Of Forming An Ink Supply Channel
    74.
    发明申请
    Method Of Forming An Ink Supply Channel 有权
    形成供墨通道的方法

    公开(公告)号：US20090301999A1

    公开(公告)日：2009-12-10

    申请号：US12542659

    申请日：2009-08-17

    Applicant: Darrell LaRue McReynolds ,  Kia Silverbrook

    Inventor： Darrell LaRue McReynolds ,  Kia Silverbrook

    IPC: G11B5/127

    CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

    Abstract: A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

    Abstract translation: 一种形成用于喷墨打印头的供墨通道的方法包括以下步骤：（i）提供具有前侧和后侧的晶片; （ii）将多个前侧沟槽蚀刻到前侧; （iii）用光致抗蚀剂插塞填充每个沟槽; （iv）使用MEMS制造工艺在前侧形成喷嘴结构; （v）从背面蚀刻背面沟槽，所述背面沟槽与一个或多个所述插头相会合; （vi）通过使背面经受偏压的氧等离子体蚀刻，从而暴露背面沟槽中的侧壁特征，通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; （vii）修改暴露的侧壁特征; 和（viii）去除光致抗蚀剂插头以形成供墨通道。 供墨通道将背面连接到前侧。

    Method of modifying an etched trench
    75.
    发明授权
    Method of modifying an etched trench 有权
    修改蚀刻沟槽的方法

    公开(公告)号：US07588693B2

    公开(公告)日：2009-09-15

    申请号：US11242916

    申请日：2005-10-05

    Applicant: Darrell LaRue McReynolds ,  Kia Silverbrook

    Inventor： Darrell LaRue McReynolds ,  Kia Silverbrook

    IPC: C23F1/00 ,  G01D15/00

    CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

    Abstract: A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

    Abstract translation: 提供了一种便于修改蚀刻沟槽的工艺。 该方法包括：（a）提供包括蚀刻沟槽的晶片，所述沟槽在其底部具有光致抗蚀剂插塞; 和（b）通过对晶片进行偏压氧等离子体蚀刻来去除一部分光致抗蚀剂。 该方法特别适用于制备后续氩离子研磨的沟槽。 通过根据本发明的方法制造的印刷头集成电路具有改进的油墨通道表面轮廓和/或表面性质。

    METHOD OF FABRICATING INKJET PRINTHEAD WITH PROJECTIONS PATTERNED ACROSS NOZZLE PLATE
    76.
    发明申请
    METHOD OF FABRICATING INKJET PRINTHEAD WITH PROJECTIONS PATTERNED ACROSS NOZZLE PLATE 有权
    通过喷嘴板图案制作喷墨打印头的方法

    公开(公告)号：US20090065475A1

    公开(公告)日：2009-03-12

    申请号：US12268911

    申请日：2008-11-11

    Applicant: Kia Silverbrook

    Inventor： Kia Silverbrook

    IPC: B44C1/22

    CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B81B3/0013 ,  B81B2201/052 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/4916 ,  Y10T29/49401 ,  Y10T29/49432

    Abstract: A method of fabricating an inkjet printhead. The method includes the steps of: (a) forming a plurality of MEMS ink ejection assemblies on an ink-ejection surface of a silicon substrate, each ink ejection assembly being sealed with roof material spanning across the ink ejection assemblies to define a nozzle plate; (b) etching partially into the roof material to form simultaneously a respective nozzle rim for each ink ejection assembly and a plurality of projections patterned across the nozzle plate between nozzle rims; and (c) etching through the roof material to form a respective nozzle aperture for each ink ejection assembly. The projections patterned across the nozzle plate between nozzle rims are useful for reducing stiction between particulates and the nozzle plate.

    Abstract translation: 一种制造喷墨打印头的方法。 该方法包括以下步骤：（a）在硅衬底的喷墨表面上形成多个MEMS墨水喷射组件，每个墨水喷射组件用横跨喷墨组件的屋顶材料密封以限定喷嘴板; （b）部分地蚀刻到屋顶材料中以同时形成用于每个喷墨组件的相应喷嘴边缘和在喷嘴边缘之间跨过喷嘴板图案化的多个突起; 和（c）通过屋顶材料蚀刻以形成每个喷墨组件的相应的喷嘴孔。 在喷嘴边缘之间穿过喷嘴板图案的突出物可用于减小颗粒和喷嘴板之间的粘性。

    Method of separating MEMS devices from a composite structure
    79.
    发明申请
    Method of separating MEMS devices from a composite structure 有权
    将MEMS器件与复合结构分离的方法

    公开(公告)号：US20060051935A1

    公开(公告)日：2006-03-09

    申请号：US11273271

    申请日：2005-10-28

    Applicant: Kia Silverbrook

    Inventor： Kia Silverbrook

    IPC: H01L21/30 ,  H01L21/78 ,  H01L21/50 ,  H01L21/00

    CPC classification number: B81C1/00904 ,  B81B2201/052 ,  B81C99/008 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10S438/977

    Abstract: A method of separating MEMS devices from a structure having a substrate, a sacrificial layer positioned on a front side of the substrate and a plurality of MEMS devices embedded in the sacrificial layer includes the step of securing a front handle wafer to the sacrificial layer. The substrate is etched from a back side to the sacrificial layer to define individual MEMS integrated circuits held together with the sacrificial layer. The front handle wafer is removed and the sacrificial layer is etched away to release the MEMS integrated circuits.

    Abstract translation: 将MEMS器件与具有衬底的结构，位于衬底的前侧上的牺牲层和嵌入牺牲层中的多个MEMS器件分离的方法包括将前把手晶片固定到牺牲层的步骤。 衬底从后侧蚀刻到牺牲层，以限定与牺牲层一起保持的单个MEMS集成电路。 去除前处理晶片并蚀刻牺牲层以释放MEMS集成电路。

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