Abstract:
The invention concerns an illumination system for wavelengths (193 nm, particularly for EUV lithography with at least one light source, which has an illumination A in one surface; at least one device for producing secondary light sources; at least one mirror or lens device, comprising at least one mirror or one lens, which is (are) divided into raster elements; one or more optical elements, which are arranged between the mirror or lens device that comprises at least one mirror or one lens, which is (are) divided into raster elements, and the reticle plane, wherein the optical elements image the secondary light sources in the exit pupil of the illumination system. The illumination system is characterized by the fact that the light source is a light source for producing radiation with a wavelength ≦193 nm, which irradiates in a well-defined plane with a wavelength spectrum, wherein the range of wavelengths used for the application, particularly for lithography, has a beam divergence perpendicular to this plane that is smaller than 5 mrads.
Abstract:
An x-ray or neutron optic configuration includes a plurality of single crystal portions formed with respective spaced x-ray or neutron reflection faces formed at predetermined asymmetry angles to a Bragg diffraction plane in the respective crystal portion. The crystal portions are interconnected to maintain a first and second of these faces spaced apart for receipt of a sample between them and to allow small adjustments of the relative angle of the faces about the normal to the plane of diffraction while maintaining the normals to the Bragg planes for the first and second faces substantially in the plane of diffraction. A first face is arranged to be a monochromator and collimator with respect to x-rays or neutrons of appropriate wavelength incident reflected through the sample for receipt by the second face, which thereby serves as analyzer face.
Abstract:
The present invention provides for bending the beams, their focusing, transforming a divergent radiation into a quasi-parallel one, and vice versa, its filtering and monochromatization. Also attained are reduced radiation transfer losses, extended range of energies used, and higher radiation concentration. A possibility is provided for the use of larger radiation sources without decreasing the proportion of the captured particles, as well as for controlling the radiation spectrum. With this purpose in view, provision is made in the proposed method, apart from multiple reflection of particles upon interaction with different-density alternating media, for diffuse and potential scattering or interference of particles that diffract on multilayer structures applied to reflecting surfaces. In a device carrying the proposed method into effect, the aforementioned surfaces are coated with layers differing in electromagnetic properties. The optical system of the device appears principally as a set of miniature lenses or bemilenses 28, built up of a plurality of capillaries or polycapillaries, the walls of whose channels 24 are provided with an appropriate coating 22. No use of any support structures for forming the profiles of the optical system is required.
Abstract:
An optical system for x-rays combines at least two spherical or near spherical mirrors for each dimension in grazing incidence orientation to provide the functions of a lens in the x-ray region. To focus x-ray radiation in both the X and the Y dimensions, one of the mirrors focusses the X dimension, a second mirror focusses the Y direction, a third mirror corrects the X dimension by removing comatic aberration and a fourth mirror corrects the Y dimension. Spherical aberration may also be removed for an even better focus. The order of the mirrors is unimportant.
Abstract:
A monochromator for use with synchrotron x-ray radiation comprises two diffraction means which can be rotated independently and independent means for translationally moving one diffraction means with respect to the other. The independence of the rotational and translational motions allows Bragg angles from 3.5.degree. to 86.5.degree., and facilitates precise and high-resolution monochromatization over a wide energy range. The diffraction means are removably mounted so as to be readily interchangeable, which allows the monochromator to be used for both non-dispersive and low dispersive work.
Abstract:
An intensifying screen for exposing X-ray film includes a screen support backing, a luminescent layer having a luminescent material that emits light in the presence of X-rays, and a reflective layer disposed between the luminescent layer and the screen support backing, the reflective layer including a plurality of micro-prisms that reflect light emitted by the luminescent material. An X-ray film cassette includes at least one intensifying screen and a housing surrounding the at least one intensifying screen.
Abstract:
A conductive substrate (18) and an etching substrate (20) are bonded to each other. An etch mask (25) is formed on the etching substrate (20) using a photolithography technique. On the etching substrate (20), grooves (20a) and X-ray transmitting sections (14b) are formed by dry etching using Bosch process. The grooves (20a) are filled with Au (27) by an electroplating method using the conductive substrate (18) as an electrode. Thus, X-ray absorbing sections (14a) are formed.
Abstract:
Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.
Abstract:
Provided are a method and an apparatus of precisely measuring the intensity profile of an x-ray nanobeam, which can measure x-rays having different wavelengths with one knife edge and can perform optimal measurements corresponding to the depth of focus of an x-ray beam and the conditions of other measurement devices, using a dark field measurement method which enables precise measurements of the profile of an x-ray beam using a knife edge and using diffracted and transmitted x-rays. The knife edge (4) is formed of a heavy metal which advances the phase of an x-ray passing therethrough and is fabricated in such a manner that the thickness may change in the longitudinal direction continuously or in a stepwise fashion. The knife edge (4) is so set that an x-ray beam may traverse the knife edge (4) at such a thickness position as to achieve a phase shift in a range wherein a transmitted x-ray and a diffracted x-ray diffracted at the end of the knife edge may reinforce each other, and a superposed x-ray of the diffracted x-ray and the transmitted x-ray is measured by an x-ray detector.
Abstract:
A compound x-ray lens and method of fabricating these lenses are disclosed. These compound lenses use multiple zone plate stacking to achieve a pitch frequency increase for the resulting combined zone plate. The compound equivalent zone plate includes a first zone plate having an initial pitch frequency stacked onto a second zone plate to form an equivalent compound zone plate. The equivalent zone plate has a pitch frequency that is at least twice the initial pitch frequency. Also, in one example, the equivalent zone plate has a mark-to-space ratio of 1:1.