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公开(公告)号：US20140043595A1
公开(公告)日：2014-02-13
申请号：US14056654
申请日：2013-10-17
Applicant: Media Lario, S.R.L.
Inventor： Natale M. Ceglio , Gopal Vasudevan
CPC classification number: G03F7/70008 , G02B5/0891 , G02B5/10 , G02B5/208 , G02B27/0927 , G02B27/0983 , G03F7/70033 , G03F7/70166 , G03F7/70175
Abstract: A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.
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Patent Agency Ranking
2.发明申请Source-collector modules for EUV lithography employing a GIC mirror and a LPP source 有权用于采用GIC镜和LPP光源的EUV光刻的源极集电极模块公开(公告)号：US20130207004A1
公开(公告)日：2013-08-15
申请号：US13761189
申请日：2013-02-07
Applicant: Media Lario, S.R.L.
Inventor： Natale M. Ceglio , Daniel STEARNS , Jacques KOOLS , Giuseppe VALSECCHI , Fabio ZOCCHI , Riccardo BINDA
CPC classification number: H05G2/005 , G02B5/203 , G02B19/0095 , G02B27/425 , G03F7/70033 , G03F7/70166 , G03F7/70316 , G03F7/70575 , G03F7/70916 , G21K1/067 , H05G2/008 , G21K2201/06 , G21K2201/064
Abstract: Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.
Abstract translation: 公开了用于EUV光刻系统的源极集电极模块，其中源极 - 集电极模块采用激光产生的等离子体EUV辐射源和放电入射收集器。 通过首先形成低密度等离子体，然后用足够强度的红外辐射照射低密度等离子体来产生EUV辐射源，以产生最终的EUV发射等离子体。 掠入射收集器可以包括被配置为防止红外辐射到达中间焦点的光栅。 使用碎片减轻装置可以保持源 - 收集器模块的使用寿命。
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公开(公告)号：US09585236B2
公开(公告)日：2017-02-28
申请号：US14260306
申请日：2014-04-24
Applicant: Media Lario S.R.L.
Inventor： Natale M. Ceglio , Daniel Stearns , Richard Levesque
CPC classification number: H05G2/005 , G03F7/70033 , G03F7/70916 , H05G2/006 , H05G2/008
Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of
Abstract translation: 公开了一种用于EUV光刻的Sn蒸气EUV LLP源系统。 该系统从Sn液体供应产生Sn蒸气柱。 Sn柱的Sn原子密度<1019 atoms / cm3，以声速或接近声速行进。 该系统还具有一个Sn蒸汽冷凝器，其布置成接收Sn蒸气柱并冷凝Sn蒸气以形成再循环的Sn液体。 脉冲激光照射Sn蒸气柱的一部分。 每个脉冲产生电子密度<1019电子/ cm 3的低密度Sn等离子体，从而允许低密度Sn等离子体基本上各向同性地发射EUV辐射。
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4.发明授权Source-collector modules for EUV lithography employing a GIC mirror and a LPP source 有权用于采用GIC镜和LPP光源的EUV光刻的源极集电极模块公开(公告)号：US08895946B2
公开(公告)日：2014-11-25
申请号：US13761189
申请日：2013-02-07
Applicant: Media Lario, S.R.L.
Inventor： Natale M. Ceglio , Daniel Stearns , Jacques Kools , Giuseppe Valsecchi , Fabio Zocchi , Riccardo Binda
CPC classification number: H05G2/005 , G02B5/203 , G02B19/0095 , G02B27/425 , G03F7/70033 , G03F7/70166 , G03F7/70316 , G03F7/70575 , G03F7/70916 , G21K1/067 , H05G2/008 , G21K2201/06 , G21K2201/064
Abstract: Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.
Abstract translation: 公开了用于EUV光刻系统的源极集电极模块，其中源极 - 集电极模块采用激光产生的等离子体EUV辐射源和放电入射收集器。 通过首先形成低密度等离子体，然后用足够强度的红外辐射照射低密度等离子体来产生EUV辐射源，以产生最终的EUV发射等离子体。 掠入射收集器可以包括被配置为防止红外辐射到达中间焦点的光栅。 使用碎片减轻装置可以保持源 - 收集器模块的使用寿命。
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公开(公告)号：US08873025B2
公开(公告)日：2014-10-28
申请号：US14056654
申请日：2013-10-17
Applicant: Media Lario, S.R.L.
Inventor： Natale M. Ceglio , Gopal Vasudevan
CPC classification number: G03F7/70008 , G02B5/0891 , G02B5/10 , G02B5/208 , G02B27/0927 , G02B27/0983 , G03F7/70033 , G03F7/70166 , G03F7/70175
Abstract: A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.
Abstract translation: 用于极紫外（EUV）辐射的收集器系统包括与照明器的孔径构件相邻布置的收集器反射镜和辐射收集增强装置（RCED）。 收集器镜将EUV辐射源的EUV辐射引导到孔径构件。 RCED将EUV辐射的一部分重新定向，否则它们将不会通过孔径构件的孔径，或者不具有最佳的角度分布，以穿过该孔，并具有更好地适合于输入规格的角分布 照明器 这为照明器提供了比单独从收集器镜可能获得的更大量的可用的EUV辐射，从而增强了使用具有RCED的这种收集器系统的EUV光刻系统的执行。
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公开(公告)号：US20140326904A1
公开(公告)日：2014-11-06
申请号：US14260306
申请日：2014-04-24
Applicant: Media Lario S.R.L.
Inventor： Natale M. Ceglio , Daniel Stearns , Richard Levesque
IPC: H05G2/00
CPC classification number: H05G2/005 , G03F7/70033 , G03F7/70916 , H05G2/006 , H05G2/008
Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of
Abstract translation: 公开了一种用于EUV光刻的Sn蒸气EUV LLP源系统。 该系统从Sn液体供应产生Sn蒸气柱。 Sn柱的Sn原子密度<1019 atoms / cm3，以声速或接近声速行进。 该系统还具有一个Sn蒸汽冷凝器，其布置成接收Sn蒸气柱并冷凝Sn蒸气以形成再循环的Sn液体。 脉冲激光照射Sn蒸气柱的一部分。 每个脉冲产生电子密度<1019电子/ cm 3的低密度Sn等离子体，从而允许低密度Sn等离子体基本上各向同性地发射EUV辐射。
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