公开(公告)号：US20110143626A1

公开(公告)日：2011-06-16

申请号：US12958491

申请日：2010-12-02

Applicant: Mitsutaka Nishijima ,  Kenichi Toya ,  Takashi Iwasa

Inventor： Mitsutaka Nishijima ,  Kenichi Toya ,  Takashi Iwasa

IPC: H01J9/04

CPC classification number: H01J1/304 ,  H01J9/025

Abstract: To provide a manufacturing method of a field emission cathode, which method exerts no adverse effect on element characteristics at the time when etching is performed with an ion beam. A sacrificial layer 4 made of a thermosetting resin is formed on a gate electrode layer 3. An opening section 5 is formed in the sacrificial layer 4 and the gate electrode layer 3 by irradiating a focused ion beam, and a hole section 6 is formed by etching the insulating layer 2 by using the sacrificial layer 4 and the gate electrode layer 3 as a mask. An emitter electrode 8 is formed in the hole section 6, and the emitter material 7 on the sacrificial layer 4 is removed together with the sacrificial layer 4 on the gate electrode layer 3.

Abstract translation: 为了提供场发射阴极的制造方法，该方法对使用离子束进行蚀刻时对元件特性没有不利影响。 在栅电极层3上形成由热固性树脂制成的牺牲层4.通过照射聚焦离子束，在牺牲层4和栅电极层3中形成开口部5，并且通过 通过使用牺牲层4和栅极电极层3作为掩模蚀刻绝缘层2。 在孔部分6中形成发射电极8，牺牲层4上的发射极材料7与栅电极层3上的牺牲层4一起去除。

公开(公告)号：US07947243B2

公开(公告)日：2011-05-24

申请号：US11665250

申请日：2005-12-21

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

IPC: C01B35/00 ,  C01B21/064 ,  C01B25/00 ,  C01D3/02 ,  H01J11/04 ,  C23C14/28 ,  C23C16/00 ,  B05D3/02 ,  B05D3/00 ,  H05H1/24 ,  B01J19/12 ,  H01L21/4763

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每个都包含sp 3键合的氮化硼，sp2结合的氮化硼或其混合物，并且每个都显示出急剧的形状 场电子发射特性优异; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

公开(公告)号：US20110089336A1

公开(公告)日：2011-04-21

申请号：US12999075

申请日：2009-06-10

Applicant: Keigo Kasuya ,  Takashi Ohshima ,  Souichi Katagiri ,  Shigeru Kokubo ,  Hideo Todokoro

Inventor： Keigo Kasuya ,  Takashi Ohshima ,  Souichi Katagiri ,  Shigeru Kokubo ,  Hideo Todokoro

IPC: H01J27/26 ,  H01J27/00

CPC classification number: H01J1/304 ,  H01J37/073 ,  H01J37/265 ,  H01J2237/022 ,  H01J2237/06325 ,  H01J2237/0653 ,  H01J2237/0656

Abstract: Provided is a charged particle beam apparatus, which can emit a stable electron beam, having high brightness and a narrow energy width. The charged particle beam apparatus comprises a field emission electron source, electrodes for applying an electric field to the field emission electron source, and a vaccume exhaust unit for keeping the pressure around the field emission electron source at 1 10−8 Pa or less. The apparatus is so constituted as to use such one of the electron beams emitted as has an electron-beam-center radiation angle of 1 10−2 str or less, and to use the electric current thereof, the second order differentiation of which is negative or zero with respect to the time, and which reduces at a rate of 10% or less per hour. The charged particle beam apparatus further comprises a heating unit for the field emission electron source, and a detection unit for the electric current of the electron beam. The field emission electron source is repeatedly heated to keep the electric current of the electron beam to be emitted, at a predetermined value or higher.

Abstract translation: 提供一种带电粒子束装置，其能够发射具有高亮度和窄能量宽度的稳定电子束。 带电粒子束装置包括场致发射电子源，用于向场致发射电子源施加电场的电极和用于将场致发射电子源周围的压力保持在10×10 8 Pa以下的疫苗排气单元。 该装置构成为使用发射的电子束中心辐射角为1×10 -2 str以下的电子束，并使用其电流，其二阶微分为负 或相对于时间为零，并以每小时10％或更少的速率减少。 带电粒子束装置还包括用于场发射电子源的加热单元和用于电子束电流的检测单元。 重复加热场致发射电子源以使电子束的电流保持在规定值以上。

公开(公告)号：US20110074293A1

公开(公告)日：2011-03-31

申请号：US12566972

申请日：2009-09-25

Applicant: Mark J. Hagmann

Inventor： Mark J. Hagmann

IPC: H01J7/44

CPC classification number: H01J1/304

Abstract: Field emission devices utilizing capacitive ballasting are described with possible uses in industry. The preferred device utilizes opposing electrodes, each with a dielectric layer and a plurality of conductive islands which serve to exchange electrons, generating an oscillatory current. Ideally these islands are dome-shaped and made of a refractory metal such as tungsten of molybdenum. Through proper use and selection of materials, electrical fields with densities of 1014 A/m2 are capable of being generated.

Abstract translation: 使用电容式镇流器的场致发射器件可以用于工业中的可能用途。 优选的器件利用相对的电极，每个电极具有用于交换电子的电介质层和多个导电岛，产生振荡电流。 理想情况下，这些岛是圆顶形的，由难熔金属如钼的钨制成。 通过正确使用和选择材料，可以产生密度为1014A / m2的电场。

公开(公告)号：US07884359B2

公开(公告)日：2011-02-08

申请号：US12489105

申请日：2009-06-22

Applicant: David S. Y. Hsu ,  Jonathan L Shaw

Inventor： David S. Y. Hsu ,  Jonathan L Shaw

IPC: H01L29/06 ,  H01L23/02 ,  H01L23/48 ,  H01L29/40 ,  H01L21/3205

CPC classification number: H01J49/168 ,  B82Y10/00 ,  H01J1/304 ,  H01J3/04 ,  H01J2201/30469 ,  H01L51/0048 ,  Y10S977/876 ,  Y10S977/936 ,  Y10S977/938

Abstract: Described herein is a field ionization and electron impact ionization device consisting of carbon nanotubes with microfabricated integral gates that is capable of producing short pulses of ions.

Abstract translation: 这里描述的是由能够产生短脉冲离子的具有微结构的整体门的碳纳米管组成的场电离和电子轰击电离装置。

公开(公告)号：US07880376B2

公开(公告)日：2011-02-01

申请号：US11841761

申请日：2007-08-20

Applicant: Mikio Takai ,  Alan Fischer ,  Lein Ngaw ,  Chunming Niu

Inventor： Mikio Takai ,  Alan Fischer ,  Lein Ngaw ,  Chunming Niu

IPC: H01J1/62

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: Field emission devices comprising carbon nanotube mats which have been treated with laser or plasma are provided. Mats are formed from carbon nanotubes, also known as carbon fibrils, which are vermicular carbon deposits having diameters of less than about one micron. The carbon nanotube mats are then subjected to laser or plasma treatment. The treated carbon nanotube mat results in improved field emission performance as either a field emission cathode or as part of a field emission device.

Abstract translation: 提供了已经用激光或等离子体处理的包含碳纳米管垫的场致发射器件。 垫片由碳纳米管（也称为碳原纤维）形成，其为具有小于约一微米直径的蠕墨碳沉积物。 然后对碳纳米管垫进行激光或等离子体处理。 经处理的碳纳米管垫导致作为场发射阴极或场致发射器件的一部分的场发射性能的改善。

公开(公告)号：US20110005191A1

公开(公告)日：2011-01-13

申请号：US12921109

申请日：2009-03-05

Applicant: William Judson Ready ,  Mitchell L.R. Walker, II

Inventor： William Judson Ready ,  Mitchell L.R. Walker, II

IPC: F03H1/00 ,  H01J1/02

CPC classification number: F03H1/0025 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

Abstract: Described herein are improved ion thruster components and ion thrusters made from such components. Further described are methods of making and using the improved ion thruster components and ion thrusters made therefrom. An improved cathode includes an emitter formed from a plurality of vertically aligned carbon nanotubes. An ion thruster can include the improved cathode.

Abstract translation: 这里描述了改进的离子推进器部件和由这些部件制成的离子推进器。 进一步描述了制造和使用由其制成的改进的离子推进器部件和离子推进器的方法。 改进的阴极包括由多个垂直排列的碳纳米管形成的发射体。 离子推进器可以包括改进的阴极。

公开(公告)号：US20100328898A1

公开(公告)日：2010-12-30

申请号：US12830135

申请日：2010-07-02

Applicant: Mohammad Shafiqul Kabir

Inventor： Mohammad Shafiqul Kabir

IPC: H05K7/20 ,  B05D1/36 ,  B05D3/12 ,  B05D3/00 ,  F28F13/00

CPC classification number: B01J23/755 ,  B01J23/76 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/34 ,  C01B2202/36 ,  C23C16/04 ,  C23C16/26 ,  D01F9/08 ,  D01F9/127 ,  H01B1/04 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2237/31786 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/53276 ,  H01L29/0676 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0512 ,  H01L2221/1089 ,  H01L2221/1094 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/814 ,  Y10S977/842 ,  Y10S977/86

Abstract: The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.

Abstract translation: 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。

公开(公告)号：US07834530B2

公开(公告)日：2010-11-16

申请号：US11137725

申请日：2005-05-24

Applicant: Harish M. Manohara ,  Michael J. Bronikowski

Inventor： Harish M. Manohara ,  Michael J. Bronikowski

IPC: H01J9/02

CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/789

Abstract: High-current density field emission sources using arrays of nanofeatures bundles and methods of manufacturing such field emission sources are provided. Variable field emission performance is provided with the variance in the bundle diameter and the inter-bundle spacing, and optimal geometries for the lithographically patterned arrays were determined. Arrays of 1-μm and 2-μm diameter multi-walled carbon nanotube bundles spaced 5 μm apart (edge-to-edge spacing) were identified as the most optimum combination, routinely producing 1.5 to 1.8 A/cm2 at low electric fields of approximately 4 V/μm, rising to >6 A/cm2 at 20 V/μm over a ˜100-μm-diameter area.

Abstract translation: 提供了使用纳米尺寸束阵列的大电流密度场发射源和制造这种场致发射源的方法。 可变场发射性能具有束直径和束间距的变化，并且确定了用于光刻图案阵列的最佳几何形状。 将距离为5微米（边缘到边缘间距）的1μm和2μm直径的多壁碳纳米管束的阵列确定为最佳组合，通常在大约的低电场下产生1.5至1.8A / cm 2 4 V /μm，在直径约100μm的区域，以20 V /μm上升至> 6A / cm2。

公开(公告)号：US20100283033A1

公开(公告)日：2010-11-11

申请号：US11940488

申请日：2007-11-15

Applicant: Loucas Tsakalakos ,  Sung Su Han ,  John Aibangbee Osaheni ,  Vanita Mani

Inventor： Loucas Tsakalakos ,  Sung Su Han ,  John Aibangbee Osaheni ,  Vanita Mani

IPC: H01L29/66

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace. A metallic vapor is applied to the carbon nanostructure at a preselected temperature for a preselected period of time so that a metallized nanostructure

Abstract translation: 结构包括从衬底的一部分延伸的衬底和金属化的碳纳米结构。 在制造金属化碳纳米结构的方法中，将形成在基板上的至少一个碳结构放置在炉中。 将金属蒸汽在预选温度下预定的时间段施加到碳纳米结构，使得金属化的纳米结构