公开(公告)号：US20110073780A1

公开(公告)日：2011-03-31

申请号：US12569128

申请日：2009-09-29

Applicant: Roger B. Fish ,  Jeffrey E. Krampert

Inventor： Roger B. Fish ,  Jeffrey E. Krampert

IPC: H01J37/08 ,  B01D8/00

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/022 ,  H01J2237/2001

Abstract: In an ion implanter, one or more optical heaters are disposed above a pair of support arms. The support arms have an engaged positioned which is disposed beneath a platen and a retractable position displaced vertically away from the platen and rotated away from the platen in a direction parallel to a planar surface thereof. When the support arms are in the retracted position, the one or more optical heaters is configured to provide optical energy incident on surfaces of the cooling pads disposed on the support arms for removal of unwanted materials thereon. In this manner, the optical heaters are used during a regeneration cycle of cryogenic surfaces in an ion implanter.

Abstract translation: 在离子注入机中，一对或多个光学加热器设置在一对支撑臂上方。 支撑臂具有接合位置，其设置在压板下方并且垂直远离压板移动并沿平行于其平坦表面的方向远离压板旋转的可缩回位置。 当支撑臂处于缩回位置时，一个或多个光学加热器被配置为提供入射到设置在支撑臂上的冷却垫的表面上的光能，以去除其上的不需要的材料。 以这种方式，在离子注入机的低温表面的再生循环期间使用光学加热器。

公开(公告)号：US20110073779A1

公开(公告)日：2011-03-31

申请号：US12568923

申请日：2009-09-29

Applicant: Theodore H. Smick ,  Joseph Daniel Gillespie

Inventor： Theodore H. Smick ,  Joseph Daniel Gillespie

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/2001

Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

Abstract translation: 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 每个载体上的相应的晶片提升结构可在第一和第二位置之间移动，晶片分别与散热器间隔开并与散热片热接触。 电梯结构被操作以在植入物旋转的第一和第二位置轮之间移动。 这允许通过调整晶片和散热器之间的热接触来控制植入过程中的晶片温度。

公开(公告)号：US07900896B2

公开(公告)日：2011-03-08

申请号：US12393037

申请日：2009-02-26

Applicant: Masashi Fujita

Inventor： Masashi Fujita

IPC: B23Q1/25 ,  B23Q1/62

CPC classification number: H01J37/20 ,  H01J37/26 ,  H01J2237/2001 ,  H01J2237/20228

Abstract: An object of the present invention is to provide a specimen stage which is simple in structure, and which suppresses a positional shift due to a friction heat caused by a brake or the like. One aspect to achieve the object provides a specimen stage including: a thrust portion thrust by a thrusting member; and a slide surface thrust by the thrust portion. When the specimen stage stops, the specimen stage performs a control in a way that a part of the slide surface in contact with the thrust portion, and/or a portion adjacent to the part or the thrust portion is heated. By heating the part of the slide surface or the like in this manner, a temperature gradient can be suppressed as described above (see FIG. 3).

Abstract translation: 本发明的目的在于提供一种结构简单，能够抑制由制动器等产生的摩擦热引起的位置偏移的试样台。 实现该目的的一个方面提供了一种试样台，包括：由推进构件推力的推力部分; 以及由推力部推力的滑动面。 当试样台停止时，试样台以与推力部接触的滑动面的一部分和/或与部分或推力部相邻的部分被加热的方式进行控制。 通过以这种方式加热滑动面等的一部分，可以如上所述地抑制温度梯度（参照图3）。

公开(公告)号：US07892986B2

公开(公告)日：2011-02-22

申请号：US12052239

申请日：2008-03-20

Applicant: Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

Inventor： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

IPC: H01L21/26

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/31138

Abstract: An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.

Abstract translation: 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃

公开(公告)号：US07867403B2

公开(公告)日：2011-01-11

申请号：US11756074

申请日：2007-05-31

Applicant: Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

Inventor： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

IPC: B44C1/22 ,  C25F3/00

CPC classification number: H01J37/32623 ,  G03F1/80 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.

Abstract translation: 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。

公开(公告)号：US07845245B2

公开(公告)日：2010-12-07

申请号：US12163298

申请日：2008-06-27

Applicant: Michael Frederick Hayles ,  Uwe Luecken

Inventor： Michael Frederick Hayles ,  Uwe Luecken

IPC: B01L3/00 ,  G01N1/22 ,  G01F23/00

CPC classification number: G01N1/06 ,  G01N1/286 ,  G02B21/32 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/208 ,  H01J2237/31745

Abstract: The invention relates to the extraction of a frozen hydrated sample for TEM (Transmission Electron Microscope) inspection, such as a vitrified biological sample, from a substrate and the attaching of said sample to a manipulator. Such a hydrated sample should be held at a cryogenic temperature to avoid ice formation. By melting or sublimating a part of the sample material outside the area to be studied in the TEM and freezing the material to the manipulator (10), a bond is formed between sample (1) and manipulator. This makes it possible to transport the sample from the substrate to e.g. a TEM grid.In a preferred embodiment a part (2) of the manipulator (10) is held at a cryogenic temperature, and the melting or sublimation is caused by heating the tip (3) of the manipulator by electric heating of the tip and then cooling the tip of the manipulator to a cryogenic temperature, thereby freezing the sample (1) to the manipulator.

Abstract translation: 本发明涉及从基材提取用于TEM（透射电子显微镜）检查的冷冻水合样品，例如玻璃化生物样品，并将所述样品附着到机械手。 这样的水合样品应保持在低温温度以避免冰层形成。 通过在TEM中将待研究区域外的一部分样品材料熔化或升华，并将材料冷冻至机械手（10），在样品（1）和机械手之间形成结合体。 这使得可以将样品从衬底输送到例如。 一个TEM网格。 在优选实施例中，操纵器（10）的部分（2）保持在低温温度，并且通过对尖端的电加热来加热操纵器的尖端（3），然后冷却尖端而引起熔化或升华 的操纵器到低温，从而将样品（1）冷冻到机械手。

公开(公告)号：US07842135B2

公开(公告)日：2010-11-30

申请号：US11327975

申请日：2006-01-09

Applicant: Kenneth Boh Khin Teo ,  Nalin Lalith Rupesinghe

Inventor： Kenneth Boh Khin Teo ,  Nalin Lalith Rupesinghe

IPC: C23C16/00

CPC classification number: C23C16/46 ,  C23C16/45565 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/2001

Abstract: Nano-technology is an emerging and intensely competitive field. There are a number of companies that work mainly in the development of various Nano-technology areas. One area that has not received too much emphasis is that of specialized equipment for Nano-technology. Nanoinstruments is a company working to rectify this deficiency in the field of nano-material deposition, especially in Carbon Nanotube and Nanowire growth. A number of innovations disclosed include the use of a low thermal mass heating unit that allows fast changes in temperature of the growth sample while providing sufficient thermal stability, uniformity and electrical isolation, a novel shower head design for providing uniform gas flow while eliminating thermal and plasma decomposition of feed stock at the nozzle, a pulsed voltage waveform that eliminates charging of substrate on which the growth has to take place, and the use of a conductive grid over insulating substrates to achieve uniform plasma over the growth surface.

Abstract translation: 纳米技术是一个新兴和激烈竞争的领域。 有几家公司主要从事各种纳米技术领域的开发。 一个没有得到太多重视的领域是纳米技术专用设备。 纳米仪器是一家致力于弥补纳米材料沉积领域缺陷的公司，特别是碳纳米管和纳米线生长。 公开的一些创新包括使用低热量加热单元，其允许生长样品的温度快速变化，同时提供足够的热稳定性，均匀性和电隔离，一种新颖的喷头设计，用于提供均匀的气流，同时消除热和 在喷嘴处的原料的等离子体分解，消除了必须进行生长的衬底的充电的脉冲电压波形，以及在绝缘衬底上使用导电栅极以在生长表面上实现均匀的等离子体。

公开(公告)号：US07794617B2

公开(公告)日：2010-09-14

申请号：US11689629

申请日：2007-03-22

Applicant: Akihiro Kikuchi ,  Takashi Tsunoda ,  Yuichiro Sakamoto

Inventor： Akihiro Kikuchi ,  Takashi Tsunoda ,  Yuichiro Sakamoto

IPC: C03C15/00

CPC classification number: H01L21/31116 ,  H01J2237/2001 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139

Abstract: A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

Abstract translation: 等离子体蚀刻方法包括以下步骤：通过使用由含有碳氟化合物气体，氢氟烃气体，稀有气体和O 2气体的处理气体产生的等离子体来蚀刻目标物体的硅层，并且通过使用图案化的抗蚀剂膜作为 一个面具 目标物体包括主要成分为硅的硅层和形成在硅层上的图案化的抗蚀剂膜。

公开(公告)号：US20100206482A1

公开(公告)日：2010-08-19

申请号：US12698616

申请日：2010-02-02

Applicant: Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

Inventor： Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

IPC: C23F1/08 ,  G01J5/08 ,  G01K1/00 ,  C23C16/00

CPC classification number: H01L21/67248 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/045 ,  G01J5/048 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0821 ,  G01J5/0846 ,  G01K11/00 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

Abstract translation: 一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。 在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在 基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

公开(公告)号：US20100126666A1

公开(公告)日：2010-05-27

申请号：US12368412

申请日：2009-02-10

Applicant: Takumi TANDOU ,  Kenetsu Yokogawa ,  Masaru Izawa

Inventor： Takumi TANDOU ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01L21/3065

CPC classification number: H01L21/67248 ,  H01J37/32522 ,  H01J2237/2001 ,  H01L21/67109

Abstract: In a plasma processing apparatus; a refrigerant flow passage being formed in the sample table and constituting an evaporator of a cooling cycle and the in-plane temperature of the sample to be processed is controlled uniformly by controlling the enthalpy of the refrigerant supplied to the refrigerant flow passage and thereby keeping the flow mode in the refrigerant flow passage, namely in the sample table, in the state of a gas-liquid two-phase. If by any chance dry out of the refrigerant occurs in the refrigerant flow passage because the heat input of plasma increases with time or by another reason, it is possible to increase speed of a compressor and inhibit the dry out from occurring in the refrigerant flow passage. Further, if the refrigerant supplied to the refrigerant flow passage is liquefied, it is kept in the gas-liquid two-phase state.

Abstract translation: 在等离子体处理装置中; 形成在样品台中并构成冷却循环的蒸发器的制冷剂流动通道，并且通过控制供给制冷剂流动通道的制冷剂的焓来均匀地控制待加工样品的面内温度，从而保持 在气液两相状态下的制冷剂流路中，即样品台中的流动模式。 如果由于等离子体的热输入随着时间的推移或由于其他原因而在制冷剂流通道中发生制冷剂的任何干扰，则可以提高压缩机的速度并且抑制在制冷剂流动通道中发生的干燥 。 此外，如果供给到制冷剂流路的制冷剂液化，则保持在气液两相状态。