Abstract:
A flat, cold-cathode electron emitter including a substrate having a relatively flat surface with a low work function electron emission material layer for emitting electrons supported on the surface of the substrate. A contact conductive layer is disposed on the electron emission material layer and defines an aperture therethrough. An insulating layer is disposed on the contact conductive layer and has an aperture defined therethrough coextensive and in peripheral alignment with the aperture in the contact conductive layer and a conductive gate layer is disposed on the insulating layer. The contact conductive layer forms the field potential so that emission occurs substantially in the center of the aperture.
Abstract:
A field-emission electronic device works as a field-emission electron source. The field-emission electronic device comprises an anode electrode, a first insulating member disposed on the anode electrode, a cathode electrode disposed on the first insulating member, a second insulating member disposed on the anode electrode at a distance from the first insulating member, and a gate electrode disposed on the second insulating member. Therefore, the field-emission electronic device can be formed to make the distance between the electrodes smaller than that of the known field-emission electronic device. Concretely, the distances between the cathode electrode and the gate electrode and between the cathode electrode and the anode electrode are allowed to be reduced. This results in lowering a gate voltage and an anode voltage.
Abstract:
A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitter electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.
Abstract:
An electron gun is modulated by an optoelectronic switching device. This switching device comprises a modulated light source and at least one GaAs or Si solid-state optoelectronic switch, this switch being non-conductive when not illuminated and conductive when illuminated by the modulated light source; the device also includes components to transmit the light from the source to the switch(es). In one embodiment, the modulated light source is a laser and in a second embodiment the source is a continuous source externally modulated by a mechanical or electrooptical device. The optoelectronic switching device is connected between a high-voltage source and the cathode of an electron gun, thus modulating the cathode.The invention is particularly applicable to microwave electron tubes.
Abstract:
An ion plasma electron gun for the generation of large area electron beams with uniform electron distribution. Positive ions generated by a wire in a plasma discharge chamber are accelerated through an extraction grid into a second chamber containing a high voltage cold cathode. These positive ions bombard a surface of the cathode causing the cathode to emit secondary electrons which form an electron beam. After passage through an extraction grid and plasma discharge chamber, the electron beam exits from the gun by way of a second grid and a foil window supported on the second grid. The gun is constructed so that the electron beam passing through the foil window has a relatively large area and uniform electron distribution which is substantially the same as the ion distribution of the ion beam impinging upon the cathode. A target and comparison circuit are functionally connected to a current control power supply for the positive ion source which in combination are capable of maintaining the output of secondary electrons emitting from the foil window substantially constant.
Abstract:
An electron gun for emitting a modulated electron beam. The gun includes an evacuated envelope having an output end with a photocathode positioned in the envelope and responsive to light to emit electrons. An anode is positioned between the photocathode and the output end for accelerating the electrons emitted by the photocathode. The gun further includes a source of potential interconnecting the anode and the photocathode for maintaining the anode electrostatically positive relative to the photocathode. A first laser provides a first laser beam at a first frequency illuminating the photocathode, and a second laser provides a second laser beam at a second frequency illuminating the photocathode at the same time. The first frequency differs from the second frequency by a beat frequency, whereby the photocathode provides the electron beam with the electrons spacially bunched in accordance with the beat frequency. A method of providing a modulated electron beam is also disclosed.
Abstract:
An improved Wire-Ion-Plasma Electron-gun (WIP E-gun) is disclosed, having a very rapid electron beam current interruption capability. An auxiliary grid is employed to provide a potential barrier to the reservoir of plasma ions in the ionization chamber, thereby containing these ions in the chamber after the wire anode is turned "OFF". The E-gun current fall time is reduced to the time required for the plasma potential to fall in the ionization chamber after the wire anode is turned "OFF". The WIP E-gun current fall time is reduced, from greater than fifteen microseconds for devices not employing the invention, to less than two microseconds.
Abstract:
The invention is directed to a method of preventing cathode damage when switching on an electron gun having a field emission cathode assembly including a cathode, a first electrode and a ground electrode. During normal operation of the electron gun, an extraction voltage is applied across the cathode and the first electrode and an accelerating voltage is applied across the cathode and the ground electrode. A direct galvanic connection is established between the cathode and the first electrode prior to normal operation of the electron gun. During a burn-in period, only the accelerating voltage is applied. This accelerating voltage may include an overvoltage of up to twenty percent. Then the galvanic connection between the cathode and the first electrode is interrupted and the extraction voltage is applied. An arrangement for carrying out the invention is also disclosed.
Abstract:
A field-emission electron gun wherein, during the state under which an electric field is formed between the cathode and the first anode to thus emit electrons, a heating current is supplied to a filament mounted on the cathode, to steadily heat the cathode so as to hold it at a certain fixed temperature within a range of from 100*C. to 500*C.
Abstract:
An electron gun comprises a photoemissive source, which is excited by a source of light such as a pulsed laser. This electron emission is amplified by a secondary emission multiplication system comprising a plurality of AC or DC biased dynodes. In the former case the gun envelope forms a resonator cavity.