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    PLASMA ABATEMENT USING WATER VAPOR IN CONJUNCTION WITH HYDROGEN OR HYDROGEN CONTAINING GASES
    71.
    发明申请
    PLASMA ABATEMENT USING WATER VAPOR IN CONJUNCTION WITH HYDROGEN OR HYDROGEN CONTAINING GASES 审中-公开
    使用水蒸气与含氢气体或氢气相连的等离子体消耗

    公开(公告)号：US20160166868A1

    公开(公告)日：2016-06-16

    申请号：US14944030

    申请日：2015-11-17

    Applicant: Applied Materials, Inc.

    Inventor： Colin John DICKINSON

    IPC: A62D3/30 ,  H01J37/32

    CPC classification number: H01J37/32844 ,  A62D3/19 ,  A62D2101/22 ,  A62D2101/26 ,  A62D2101/28 ,  H01J37/32834 ,  Y02C20/30 ,  Y02E60/366

    Abstract: A plasma abatement process for abating effluent containing a PFC gas from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as an etch chamber, and reacts with the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the PFC gases and reacts them with a reagent, converting the effluent into compounds that are non-global warming and which may be easily removed by traditional facility water scrubbing technology. This disclosure explains methods to control the reagent hydrogen to oxygen ratio such that in addition to PFC destruction, the abated compounds have modified composition to enable extension of the maintenance interval for downstream supporting equipment.

    Abstract translation: 描述了用于减轻来自处理室的含有PFC气体的流出物的等离子体消除过程。 等离子体消除过程使用来自处理室（例如蚀刻室）的气态前级流出物，并与放置在前级管路中的等离子体室内的流出物反应。 等离子体离解PFC气体并与试剂反应，将流出物转化成非全球变暖的化合物，并且可以通过传统的设备水洗技术容易地除去。 本公开说明了控制试剂氢与氧比的方法，使得除了PFC破坏之外，减排的化合物具有改进的组成，以能够延长下游配套设备的维护间隔。

    METHOD FOR PREVENTING EXPLOSION OF EXHAUST GAS IN DECOMPRESSION PROCESSING APPARATUS
    73.
    发明申请
    METHOD FOR PREVENTING EXPLOSION OF EXHAUST GAS IN DECOMPRESSION PROCESSING APPARATUS 审中-公开
    防止排气处理装置中的排气爆炸的方法

    公开(公告)号：US20150330631A1

    公开(公告)日：2015-11-19

    申请号：US14699102

    申请日：2015-04-29

    Applicant: Tokyo Electron Limited

    Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Risako MIYOSHI

    IPC: F23N5/24 ,  G01N25/54

    CPC classification number: F23N5/24 ,  F23M11/00 ,  F23M2900/11021 ,  G01N25/54 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605 ,  Y10T137/0346

    Abstract: Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.

    Abstract translation: 公开了一种等离子体处理装置，其中主控制单元能够通过稀释控制器管理废气处理单元中的废气的处理情况。 废气处理单元包括通过排气管连接到真空泵出口的解毒装置，通过稀释气体供给管，MFC和开口连接到靠近真空泵出口的排气管的稀释气体源 安装在稀释气体供给管的中间的气体传感器，附着在稀释气体供给管的端部（节点N）的下游侧的排气管的气体传感器，以及配置为控制MFC的稀释控制器。

    GAS SLEEVE FOR FORELINE PLASMA ABATEMENT SYSTEM
    74.
    发明申请
    GAS SLEEVE FOR FORELINE PLASMA ABATEMENT SYSTEM 审中-公开
    气体等离子体吸收系统

    公开(公告)号：US20140262033A1

    公开(公告)日：2014-09-18

    申请号：US14184667

    申请日：2014-02-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANDREW HERBERT ,  COLIN JOHN DICKINSON

    IPC: H01J37/32

    CPC classification number: H01J37/32834 ,  H01J37/32844 ,  Y02C20/30

    Abstract: Methods and apparatus for protecting an inner wall of a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a gas sleeve generator including a gas sleeve generator comprising a body having a central opening disposed through the body; a plenum disposed within the body and surrounding the central opening; an inlet coupled to the plenum; and an annulus coupled at a first end to the plenum and forming an annular outlet at a second end opposite the first end, wherein the annular outlet is concentric with and open to the central opening. The gas sleeve generator may be disposed upstream of a foreline plasma abatement system to provide a sleeve of a gas to a foreline of a substrate processing system.

    Abstract translation: 本文提供了用于保护衬底处理系统的前级管线的内壁的方法和装置。 在一些实施例中，用于处理衬底处理系统的前级管线中的废气的装置包括气体套管发生器，其包括气体套管发生器，该气体套筒发生器包括具有穿过本体布置的中心开口的主体; 设置在所述主体内并围绕所述中心开口的增压室; 连接到气室的入口; 以及在第一端处连接到所述增压室并在与所述第一端相对的第二端处形成环形出口的环形空间，其中所述环形出口与所述中心开口同心且对所述中心开口敞开。 气体套管发生器可以设置在前级等离子体消除系统的上游，以将气体套管提供给衬底处理系统的前级管线。

    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION
    75.
    发明申请
    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION 审中-公开
    双重加载配置中的消费和条带处理室

    公开(公告)号：US20130337655A1

    公开(公告)日：2013-12-19

    申请号：US14002087

    申请日：2012-02-29

    Applicant: Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

    Inventor： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

    IPC: H01L21/3065 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01J37/32844 ,  H01L21/02071 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/68785 ,  Y02C20/30 ,  Y02P70/605

    Abstract: Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

    Abstract translation: 本发明的实施例提供一种能够处理基板的双载荷锁定室。 在一个实施例中，双负载锁定室包括限定第一室容积的室主体和彼此隔离的第二室容积。 下部和第二腔室容积中的每一个通过构造成用于衬底转移的两个开口选择性地连接到两个处理环境。 双负载锁定室还包括设置在第二室容积中的加热的衬底支撑组件。 被加热的衬底支撑组件构造成在其上支撑和加热衬底。 双负载锁定室还包括连接到第二室容积的远程等离子体源，用于将等离子体供应到第二室容积。

    RF Coupled Plasma Abatement System Comprising an Integrated Power Oscillator
    77.
    发明申请
    RF Coupled Plasma Abatement System Comprising an Integrated Power Oscillator 有权
    RF耦合等离子体消除系统，包括集成功率振荡器

    公开(公告)号：US20120279657A1

    公开(公告)日：2012-11-08

    申请号：US13102206

    申请日：2011-05-06

    Applicant: Aseem K. Srivastava ,  William F. DiVergilio

    Inventor： Aseem K. Srivastava ,  William F. DiVergilio

    IPC: H01L21/306

    CPC classification number: A61H35/006 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32844 ,  Y02C20/30

    Abstract: The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.

    Abstract translation: 本公开涉及一种用于使用使用基于消除等离子体的负载的反馈驱动的集成功率振荡器电路点燃和维持的RF等离子体来产生处理室下游的减排等离子体的方法和装置。 在一个实施例中，等离子体灰化系统包括被配置为从包含工件的上游处理室接收流出物副产物的减排系统。 流出物副产物沿着排气管道被提供到具有集成功率振荡器的下游后燃器单元，其依赖于可操作地耦合到天线的振荡电路以点燃排气管道内的消除等离子体。 天线与等离子体负载一起形成谐振回路，其提供驱动振荡电路的操作的反馈，从而允许振荡电路基于消除等离子体负载的变化来改变其输出。

    CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION
    78.
    发明申请
    CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION 有权
    具有均匀流动和等离子体分布的室

    公开(公告)号：US20110162803A1

    公开(公告)日：2011-07-07

    申请号：US12884978

    申请日：2010-09-17

    Applicant: DAVID PALAGASHVILI ,  MICHAEL D. WILLWERTH ,  ALEX ERENSTEIN ,  JINGBAO LIU

    Inventor： DAVID PALAGASHVILI ,  MICHAEL D. WILLWERTH ,  ALEX ERENSTEIN ,  JINGBAO LIU

    IPC: C23F1/08 ,  B65D25/00

    CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32816 ,  H01J37/32844

    Abstract: Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.

    Abstract translation: 本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。 在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

    Plasma generating electrode, plasma generation device, and exhaust gas purifying device
    80.
    发明授权
    Plasma generating electrode, plasma generation device, and exhaust gas purifying device 失效
    等离子体发生电极，等离子体产生装置和废气净化装置

    公开(公告)号：US07638103B2

    公开(公告)日：2009-12-29

    申请号：US10560858

    申请日：2004-06-18

    Applicant: Masanobu Miki ,  Kenji Dosaka ,  Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Tatsuhiko Hatano ,  Takeshi Sakuma ,  Yuuichiro Imanishi

    Inventor： Masanobu Miki ,  Kenji Dosaka ,  Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Tatsuhiko Hatano ,  Takeshi Sakuma ,  Yuuichiro Imanishi

    IPC: B01J19/08

    CPC classification number: H01J37/3244 ,  F01N3/0892 ,  F01N13/009 ,  F01N2240/28 ,  H01J37/32844 ,  H05H1/2406 ,  H05H2001/2418 ,  Y02C20/30

    Abstract: A plasma generating electrode 1 of the invention includes at least a pair of electrodes 5, at least one electrode 5a of the pair of electrodes 5 including a plate-like ceramic body 2 as a dielectric and a plurality of conductive films 3 disposed in the ceramic body 2 and each having a plurality of through-holes 4 formed through the conductive film 3 in its thickness direction in a predetermined arrangement pattern, the through-holes 4 having a cross-sectional shape including an arc shape along a plane perpendicular to the thickness direction, an arrangement pattern of the through-holes 4a formed in at least one conductive film 3a being different from an arrangement pattern of the through-holes 4b formed in the other conductive film 3b. The plasma generating electrode 1 is capable of simultaneously generating different states of plasma upon application of voltage between the pair of electrodes 5 due to the different arrangement patterns of the through-holes 4 in the conductive films 3.

    Abstract translation: 本发明的等离子体发生电极1至少包括一对电极5，一对电极5的至少一个电极5a包括作为电介质的板状陶瓷体2和设置在陶瓷中的多个导电膜3 主体2，并且每个具有以预定布置图案在其厚度方向上穿过导电膜3形成的多个通孔4，所述通孔4具有沿垂直于厚度的平面的包括弧形的横截面形状 形成在至少一个导电膜3a中的通孔4a的布置图形与形成在另一个导电膜3b中的通孔4b的布置图案不同。 等离子体产生电极1由于导电膜3中的通孔4的不同布置图案而能够在施加一对电极5之间的电压的同时产生不同的等离子体状态。

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