公开(公告)号：US20120100722A1

公开(公告)日：2012-04-26

申请号：US13230869

申请日：2011-09-13

Applicant: Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

Inventor： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

IPC: H01L21/31 ,  C23C16/505

CPC classification number: C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

Abstract translation: 公开了一种基板处理装置，包括：处理室; 多个缓冲室; 第一处理气体供应系统，其向所述处理室供应第一处理气体; 向缓冲室供给第二处理气体的第二处理气体供给系统; 射频电源; 缓冲室中的等离子体产生电极; 加热系统; 以及控制器，其控制第一和第二处理气体供应系统，电源和加热系统，以将其上具有金属膜的基板暴露于第一处理气体，以及在多个缓冲室中被激活的第二处理气体 对电极施加RF功率，并且从缓冲室供应到处理室，以在将衬底加热至第一处理气体的自分解温度或更低温度的同时在金属膜上形成膜。

公开(公告)号：US20110284506A1

公开(公告)日：2011-11-24

申请号：US13105981

申请日：2011-05-12

Applicant: Ken'etsu YOKOGAWA ,  Masatoshi Miyake

Inventor： Ken'etsu YOKOGAWA ,  Masatoshi Miyake

IPC: B23K10/00

CPC classification number: H01J37/32018 ,  H01J37/32036 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/32899 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68771

Abstract: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.

Abstract translation: 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。

公开(公告)号：US20110265831A1

公开(公告)日：2011-11-03

申请号：US12907944

申请日：2010-10-19

Applicant: JARED AHMAD LEE ,  MARTIN JEFF SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

Inventor： JARED AHMAD LEE ,  MARTIN JEFF SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

IPC: B08B5/00 ,  B08B13/00 ,  F15D1/00 ,  C23F1/08

CPC classification number: F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

公开(公告)号：US20110195207A1

公开(公告)日：2011-08-11

申请号：US12909352

申请日：2010-10-21

Applicant: Byung Hee Hong ,  Young Jin Kim ,  Jaeboong Choi ,  Hyeong Keun Kim ,  Junmo Kang ,  Su Kang Bae

Inventor： Byung Hee Hong ,  Young Jin Kim ,  Jaeboong Choi ,  Hyeong Keun Kim ,  Junmo Kang ,  Su Kang Bae

IPC: B32B15/04 ,  B32B1/08 ,  B05D3/00 ,  C23C16/26 ,  B82Y30/00

CPC classification number: C23C16/545 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/463 ,  C23C16/56 ,  H01J37/3277 ,  H01J37/32899 ,  Y10T428/13 ,  Y10T428/31678

Abstract: There are provided a graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method on the basis of a continuous process.

Abstract translation: 在连续工艺的基础上提供石墨烯辊对辊涂布装置和石墨烯辊对辊涂布方法。

公开(公告)号：US20080050882A1

公开(公告)日：2008-02-28

申请号：US11931529

申请日：2007-10-31

Applicant: Malcolm Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam Alshareef

Inventor： Malcolm Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam Alshareef

IPC: H01L21/336 ,  H01L21/4763

CPC classification number: H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

Abstract translation: 可以减少在制造栅极电介质结构中使用的工艺之间发生的栅极介电层的氧化物生长。 氧化物生长的减少可以通过将栅极电介质层保持在有效的方式来实现，以在制造栅极电介质结构中的至少两个顺序的工艺步骤之间减轻栅极电介质层的氧化物生长。 维持栅极电介质层在有效减少氧化物生长的环境中也改善了注入栅电介质的氮的均匀性。

公开(公告)号：US20240347400A1

公开(公告)日：2024-10-17

申请号：US18752034

申请日：2024-06-24

Applicant: Lam Research Corporation

Inventor： Sunil Kapoor ,  Thomas Lee Frederick

IPC: H01L21/66 ,  C23C16/455 ,  C23C16/50 ,  G01R15/18 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L22/26 ,  C23C16/45536 ,  C23C16/50 ,  G01R15/18 ,  H01J37/32155 ,  H01J37/32899 ,  H01J37/3299 ,  H01L21/67253 ,  H01J2237/24564 ,  H01J2237/332

Abstract: Methods and apparatus for measuring current are disclosed.

公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US20240258085A1

公开(公告)日：2024-08-01

申请号：US18420983

申请日：2024-01-24

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/332

Abstract: A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a gas supply unit configured to provide the reaction chamber with a main gas; a shared exhaust unit configured to exhaust the main gas from the plurality of reaction chambers; a plurality of exhaust gas lines configured to fluidly couple the shared exhaust unit to the plurality of reaction chambers; and a plurality of dilution gas lines configured to provide a dilution gas into the plurality of exhaust gas lines.

公开(公告)号：US12049961B2

公开(公告)日：2024-07-30

申请号：US17656030

申请日：2022-03-23

Applicant: Applied Materials, Inc.

Inventor： Bradley J. Howard ,  Nicolas J. Bright ,  Andrew Nguyen

IPC: F16J10/02 ,  H01J37/32

CPC classification number: F16J10/02 ,  H01J37/32834 ,  H01J37/32899

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.