HYBRID INORGANIC OXIDE-CARBON MOLECULAR SIEVE MEMBRANES

    公开(公告)号:US20220219125A1

    公开(公告)日:2022-07-14

    申请号:US17607915

    申请日:2020-04-29

    Abstract: Embodiments include methods of fabricating thin film composite carbon molecular sieve membranes by exposing a polymer layer to a vapor-phase metal-organic precursor under vapor phase infiltration conditions such that the vapor-phase metal- organic precursor diffuses into the polymer layer and reacts with a functional group of the polymer to form an inorganic-organic complex; exposing the polymer layer to a vapor-phase co-reactant under vapor phase infiltration conditions such that the vapor- phase co-reactant diffuses into the polymer layer and oxidizes the organic-inorganic complex to form a metal oxide; and subjecting the polymer layer to inert-atmosphere or vacuum pyrolysis. Embodiments further include thin film composite carbon molecular sieves, and methods of separating one or more chemical species using the carbon molecular sieve membranes.

    SUBMERSIBLE SENSING SYSTEM FOR WATER AND SEDIMENT MONITORING

    公开(公告)号:US20220206181A1

    公开(公告)日:2022-06-30

    申请号:US17604026

    申请日:2020-03-17

    Abstract: A hybrid, modularized, tailored and re-configurable distributed monitoring and characterization device for bodies of water and sediments, including oceans, lakes, rivers, and water reservoirs. The device includes individual nodes, which are deployed as either a stand-alone or networked system. Each node is a multi-physics and multi-purpose piece of equipment with electronics and sensors configured into different modules which interconnect similar to building blocks. The device provides two housing options: a hard shell housing option for shallow water and an oil-filled soft shell housing scheme for deep water.

    VIRTUAL FAB AND LAB SYSTEM AND METHOD

    公开(公告)号:US20220163945A1

    公开(公告)日:2022-05-26

    申请号:US17602386

    申请日:2020-04-07

    Abstract: A system that connects a user to a cleanroom facility, the system including a computing device configured to receive a command from a user; and a platform remotely located from the computing device. The platform is configured to communicate with the computing device and with a cleanroom, the platform including a training module, an assessment module, and a manufacturing module. The platform is configured to, in response to receiving the command from the computing device, activate one of the training module, the assessment module, and the manufacturing module to take control over the cleanroom.

    ISOPOROUS POLYMER MEMBRANES
    86.
    发明申请

    公开(公告)号:US20220143560A1

    公开(公告)日:2022-05-12

    申请号:US17430795

    申请日:2020-02-12

    Abstract: Embodiments of the present disclosure describe an isoporous polymer membrane comprising a polymeric film having a plurality of isopores, wherein the isoporous polymer membrane is characterized in that it has one or more of the following features: a porosity of about 20% or greater, a plurality of isopores arranged in an ordered array, wherein the plurality of isopores extend from a first membrane surface to a second membrane surface along an axis perpendicular to the first and second membrane surfaces, a membrane size of about 45 cm2 or greater, and a pore size of about 2 μm or less. Embodiments of the present disclosure also describe methods of fabricating the isoporous polymer membranes, applications using the isoporous polymer membranes, and the like.

    Semiconductor device having a lateral semiconductor heterojunction and method

    公开(公告)号:US11329170B2

    公开(公告)日:2022-05-10

    申请号:US17134984

    申请日:2020-12-28

    Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

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