公开(公告)号：US10002936B2

公开(公告)日：2018-06-19

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20180166255A1

公开(公告)日：2018-06-14

申请号：US15835212

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065

CPC classification number: C23F4/02 ,  C09K13/00 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32135

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20170306480A1

公开(公告)日：2017-10-26

申请号：US15135333

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Suvi Haukka

IPC: C23C16/38 ,  C23C16/455

CPC classification number: C23C16/38 ,  C23C16/45523 ,  C23C16/45553

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

公开(公告)号：US20170306478A1

公开(公告)日：2017-10-26

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

CPC classification number: C23C16/38 ,  C23C16/45523 ,  C23C16/45525

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20170267531A1

公开(公告)日：2017-09-21

申请号：US15074813

申请日：2016-03-18

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka

IPC: C01B31/02 ,  C23C16/26 ,  C23C16/02 ,  C04B35/52

CPC classification number: C01B32/162 ,  B32B3/10 ,  C01B32/158 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/26 ,  Y10T428/24802

Abstract: Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.

公开(公告)号：US09583348B2

公开(公告)日：2017-02-28

申请号：US14987413

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US09228259B2

公开(公告)日：2016-01-05

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/44 ,  C23F1/00 ,  C23F1/08 ,  H01L21/3213

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种处理沉积反应器的方法。 该方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺杂铝的碳化钛膜或掺铝的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US20140295673A1

公开(公告)日：2014-10-02

申请号：US14300986

申请日：2014-06-10

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US08846550B1

公开(公告)日：2014-09-30

申请号：US13830322

申请日：2013-03-14

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US20140273527A1

公开(公告)日：2014-09-18

申请号：US13798285

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Abstract translation: 本发明涉及通过等离子体增强原子层沉积（PEALD）在反应室中的衬底上形成氮化硅薄膜的方法。 示例性方法包括以下步骤：（i）将八卤代三硅烷Si 3 X 8硅前体如八氯三硅烷（OCTS）Si 3 Cl 8引入到含有底物的反应空间中，（ii）将含氮等离子体引入反应空间，并且其中步骤 ），（ii）和其间的任何步骤构成一个循环，并重复所述循环多次，直到获得具有所需厚度的原子层氮化物膜。