Abstract:
A package structure includes a thin chip substrate, a stabilizing material layer, a chip and a filling material. A first circuit metal layer of the substrate is inlaid into a dielectric layer and a co-plane is defined by the first circuit metal layer and the dielectric layer and is exposed from the dielectric layer. The bonding pads of the substrate are on the co-plane, have a height higher than the co-plane and connected to the first circuit metal layer. The stabilizing material layer is provided on two sides of the co-plane to define a receiving space for accommodating the chip. The filling material is injected into the receiving space to fasten the pins of the chip securely with bonding pads. Since no plastic molding is required, a total thickness of the package structure and the cost is reduced. The stabilizing material layer prevents the substrate from warping and distortion.
Abstract:
Disclosed is a final defect inspection system, which including a host device, a microscope, a bar code scanner, a support tool, a signal transceiver and an electromagnetic pen. The bar code scanner scans a bar code on a circuit board provided on the support plate. The host device selects data and a circuit layout diagram from the database corresponding to the bar code. The signal transceiver and the electromagnetic pen are electrically connected to the host device. The electromagnetic pen is used to make a mark on a scrap region of the circuit board where any defect is visually found through the microscope. The signal transceiver receives and transmits the positions of the mark to the host device such that the host device calculates the coordinate of a scrap region based on a relative position between an original point and the positions of the mark.
Abstract:
A high-density fine line structure mainly includes: two boards with similar structures and a dielectric film for combing the two boards. Semiconductor devices respectively in two boards are opposite to each other after the two boards are combined. The two boards each include a fine line circuit, an insulated layer on the same surface, and the semiconductor device installed above the fine line circuit. The surface of the circuit, which is not covered by a solder mask, is made into a pad. The pad is filled with the tin balls for electrically connecting with another semiconductor device. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density.
Abstract:
A method for fabricating a buried capacitor structure includes: laminating a first dielectric layer having a capacitor embedded therein with a second dielectric layer to bury the capacitor therebetween; forming a first circuit pattern on a first metal layer of the first dielectric layer and a second circuit pattern on a second metal layer of the second dielectric layer; depositing a first insulating layer and a second insulating layer on the first metal layer and the second metal layer, respectively; electrically connecting a positive electrode end and a negative electrode end of the capacitor to the second metal layer by a positive through-hole and a negative through-hole, thereby manufacturing the buried capacitor structure.
Abstract:
A manufacturing method of a non-etched circuit board is disclosed herein, which employs a metal substrate having a metal barrier layer and an electroplated copper layer to transmit an electrical current to form a circuit layer. A patterned photoresist layer is formed on the electroplated copper layer to define the location of the circuit layer and form circuits or conductive via on the board by electroplating. An electroplated nickel layer or an electroplated gold layer is further formed on the circuit layer for protecting the circuits and improving the fine line capability. During or after the process, the metal substrate, the metal barrier layer, and the electroplated copper layer are removed to enlarge the wiring space, so that a high-density circuit board can be obtained.
Abstract:
An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.