公开(公告)号：US08790534B2

公开(公告)日：2014-07-29

申请号：US13098867

申请日：2011-05-02

Applicant: Michael A. Huff

Inventor： Michael A. Huff

IPC: B23K28/02

CPC classification number: B23K28/02 ,  B23K17/00 ,  B23K26/032 ,  B23K26/0624 ,  B23K26/083 ,  B23K26/1224 ,  B23K26/348 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/30 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  B81C2201/0143 ,  B81C2900/00 ,  H01J37/3056 ,  H01J2237/31713 ,  H01J2237/31749 ,  Y10S977/84 ,  Y10S977/888 ,  Y10S977/889 ,  Y10S977/901

Abstract: A system and method are disclosed for the precision fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Microsytems, Nanosystems, Photonics, 3-D integration, heterogeneous integration, and Nanotechology devices and structures. The disclosed system and method can also be used in any fabrication technology to increase the precision and accuracy of the devices and structures being made compared to conventional means of implementation. A platform holds and moves a substrate to be machined during machining and a plurality of lasers and/or ion beams are provided that are capable of achieving predetermined levels of machining resolution and precision and machining rates for a predetermined application. The plurality of lasers and/or ion beams comprises a plurality of the same type of laser and/or ion beam. Alternatively, a close-loop control system can be used with one laser or ion beam that is controlled and operated by the close-loop control system so as to achieve the predetermined levels of machining resolution and precision and machining rates for the predetermined application.

Abstract translation: 公开了一种用于微机电系统（MEMS），纳米机电系统（NEMS），微型模型，纳米系统，光子学，3-D集成，异构集成和纳米技术装置和结构的精密制造的系统和方法 。 所公开的系统和方法也可以用于任何制造技术，以增加与常规实施方式相比正在制造的装置和结构的精度和精度。 平台在加工过程中保持和移动待加工的基板，并且提供多个激光和/或离子束，其能够实现预定应用的预定水平的加工分辨率和精度和加工速率。 多个激光器和/或离子束包括多个相同类型的激光和/或离子束。 或者，可以使用由闭环控制系统控制和操作的一个激光器或离子束来使用闭环控制系统，以实现预定应用的预定级别的加工分辨率和精度和加工速率。

公开(公告)号：US08445390B1

公开(公告)日：2013-05-21

申请号：US13294114

申请日：2011-11-10

Applicant: Teruo Sasagawa

Inventor： Teruo Sasagawa

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00492 ,  B81C1/00269 ,  B81C2201/0143 ,  B81C2203/019

Abstract: A laser absorption layer is first selectively formed in a seal pattern region surrounding an array of electromechanical systems elements, followed by depositing an antistiction layer as a blanket layer over the substrate and the laser absorption layer. The antistiction layer is then selectively removed from the seal pattern using a laser. An epoxy sealing material is provided in the seal pattern where the antistiction layer was removed and a backplate is sealed to the substrate using epoxy.

Abstract translation: 首先在围绕机电系统元件的阵列的密封图案区域中选择性地形成激光吸收层，随后在基板和激光吸收层上沉积抗静电层作为覆盖层。 然后使用激光从密封图案中选择性地去除抗静电层。 在密封图案中提供环氧密封材料，其中除去抗静电层，并且使用环氧树脂将背板密封到基底上。

公开(公告)号：US08303833B2

公开(公告)日：2012-11-06

申请号：US11766680

申请日：2007-06-21

Applicant: Milos Toth ,  Noel Smith

Inventor： Milos Toth ,  Noel Smith

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

Abstract translation: 一种用于制造微结构的方法，其中使用诸如光束引发的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

公开(公告)号：US20120125892A1

公开(公告)日：2012-05-24

申请号：US13361079

申请日：2012-01-30

Applicant: Hideki SHIMOI ,  Hiroyuki KYUSHIMA ,  Keisuke ARAKI

Inventor： Hideki SHIMOI ,  Hiroyuki KYUSHIMA ,  Keisuke ARAKI

IPC: B44C1/22

CPC classification number: H01L23/481 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2103/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

Abstract translation: 在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口 到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔相对应的部分形成改质区域; 以及在改质区域形成工序后对物体进行各向异性蚀刻的蚀刻工序，以沿着改质区域选择性地进行蚀刻，并在物体上形成孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

公开(公告)号：US20120074598A1

公开(公告)日：2012-03-29

申请号：US13248087

申请日：2011-09-29

Applicant: Franz-Peter Kalz

Inventor： Franz-Peter Kalz

IPC: H01L23/28 ,  B23K26/00

CPC classification number: B81C1/00801 ,  B23K2103/50 ,  B81C2201/0142 ,  B81C2201/0143

Abstract: In various embodiments, a chip may include a substrate; a coating, the coating covering the substrate at least partially and the coating being designed for being stripped at least partially by means of laser ablation; wherein between the substrate and the coating, a laser detector layer is arranged at least partially, the laser detector layer being designed for generating a detector signal for ending the laser ablation.

Abstract translation: 在各种实施例中，芯片可以包括衬底; 涂层，所述涂层至少部分地覆盖所述基底，并且所述涂层被设计为至少部分地通过激光烧蚀剥离; 其中在所述基底和所述涂层之间，至少部分地布置有激光检测器层，所述激光检测器层被设计为产生用于结束所述激光烧蚀的检测器信号。

公开(公告)号：US20120019598A1

公开(公告)日：2012-01-26

申请号：US13146513

申请日：2010-01-20

Applicant: Paul A. Hoisington ,  Marc A. Torrey ,  Paul A. Hoisington ,  Marc A. Torrey

Inventor： Paul A. Hoisington ,  Marc A. Torrey ,  Paul A. Hoisington ,  Marc A. Torrey

IPC: B41J2/14 ,  H01L21/62

CPC classification number: B81C1/00904 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  B81C2201/019

Abstract: A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

Abstract translation: 描述了具有结合到身体的部件的主体的MEMS装置。 主体具有与主表面相邻并且小于主表面的主表面和侧表面。 主体由材料形成，侧表面由材料形成，并且主体是与侧面不同的晶体结构。 主体包括侧表面中的出口，并且部件包括与出口流体连接的孔。

公开(公告)号：US08049138B2

公开(公告)日：2011-11-01

申请号：US10832375

申请日：2004-04-27

Applicant: Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

Inventor： Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

IPC: B23K26/00

CPC classification number: G11B7/125 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B29C33/3857 ,  B29C64/129 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C99/009 ,  B81C2201/0143 ,  G02B5/1857 ,  G03H2001/0478 ,  G11B7/261 ,  Y10S428/913 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/31623

Abstract: An apparatus for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Abstract translation: 公开了一种用于处理具有微细三维形状和平滑表面的三维结构的装置，其中三维结构可用于光学装置。 该方法包括在平坦基底上沉积用于吸收激光的薄层; 在薄层上沉积透明层以吸收激光; 并照射通过透明层的工艺激光; 其中将工艺激光的脉冲注入能量设定为与能够在工艺激光的入射方向上的前面暴露薄层的表面的最大脉冲注入能量相同或更小，并设定 与能够沿着工艺激光的入射方向去除后方的透明层的最小脉冲注入能量相同或者更大。

公开(公告)号：US07910391B2

公开(公告)日：2011-03-22

申请号：US12204296

申请日：2008-09-04

Applicant: Susan Alie

Inventor： Susan Alie

IPC: H01L21/00

CPC classification number: H01L23/26 ,  B81C1/00285 ,  B81C2201/0143 ,  H01L2224/16 ,  H01L2924/1461 ,  H01L2924/00

Abstract: The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof.

Abstract translation: 本公开涉及用超快速激光处理硅衬底以产生例如在基本封闭的MEMS封装中的吸气材料的方法。 在一个实施例中，激光处理包括用多个激光脉冲对硅表面照射，以将吸收微结构加到被处理的表面上。 基于半导体的封装器件，例如 MEMS作为示例。

公开(公告)号：US20090321867A1

公开(公告)日：2009-12-31

申请号：US11911085

申请日：2006-04-10

Applicant: Juergen Leib ,  Dietrich Mund

Inventor： Juergen Leib ,  Dietrich Mund

IPC: H01L23/00 ,  H01L21/00 ,  H01L23/12 ,  H05K7/02

CPC classification number: H01L27/14687 ,  B81C1/00333 ,  B81C1/00873 ,  B81C2201/0143 ,  H01L23/057 ,  H01L23/08 ,  H01L23/10 ,  H01L27/14618 ,  H01L27/14632 ,  H01L31/0203 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: The invention relates to a method for production of packaged electronic, in particular optoelectronic, components in a composite wafer, in which the packaging is carried out by fitting microframe structures of a cover substrate composed of glass, and the composite wafer is broken up along trenches which are produced in the cover substrate, and to packaged electronic components which can be produced using this method, comprising a composite of a mount substrate and a cover substrate, with at least one functional element and at least one bonding element, which makes contact with the functional element, being arranged on the mount substrate, with the cover substrate being a microstructured glass which is arranged on the mount substrate, and forms a cavity above the functional element, and with the bonding elements being located outside the cavity.

Abstract translation: 本发明涉及一种用于生产复合晶片中的电子封装，特别是光电子元件的方法，其中通过安装由玻璃构成的覆盖基板的微框架结构来进行封装，并且复合晶片沿着沟槽分解 并且可以使用这种方法制造的包装电子部件，其包括安装基板和盖基板的复合物，至少一个功能元件和至少一个接合元件，其与 所述功能元件布置在所述安装基板上，所述盖基板是布置在所述安装基板上的微结构玻璃，并且在所述功能元件上方形成空腔，并且所述接合元件位于所述空腔外部。

公开(公告)号：US20080252988A1

公开(公告)日：2008-10-16

申请号：US11816804

申请日：2005-02-21

Applicant: Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

Inventor： Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

IPC: G02B9/00 ,  B29D11/00

CPC classification number: B81C99/009 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y20/00 ,  G02B3/0012

Abstract: A method is for forming three-dimensional micro- and nanostructures, based on the structuring of a body of material by a mould having an impression area which reproduces the three-dimensional structure in negative form. This method includes providing a mould having a substrate of a material which can undergo isotropic chemical etching, in which the impression area is to be formed. An etching pattern is defined on (in) the substrate, having etching areas having zero-, uni- or bidimensional extension, which can be reached by an etching agent. A process of isotropic chemical etching of the substrate from the etching areas is carried out for a corresponding predetermined time, so as to produce cavities which in combination make up the impression area. The method is advantageously used in the fabrication of sets of microlenses with a convex three-dimensional structure, of the refractive or hybrid refractive/diffractive type, for forming images on different focal planes.

Abstract translation: 一种用于形成三维微结构和纳米结构的方法，其基于通过具有以负形式再现三维结构的印模区域的模具构造材料体。 该方法包括提供具有能够进行各向同性化学蚀刻的材料的基材的模具，其中将形成印模区域。 蚀刻图案被定义在衬底的（在）中，其蚀刻区域具有零，一维或二维延伸，这可由蚀刻剂达到。 从蚀刻区域对基板进行各向同性化学蚀刻的过程进行相应的预定时间，以产生组合构成印模区域的空腔。 该方法有利地用于制造具有折射或混合折射/衍射类型的凸立体结构的微透镜组，用于在不同焦平面上形成图像。