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    THREE-DIMENSIONAL COPPER NANOSTRUCTURE AND FABRICATION METHOD THEREOF
    81.
    发明申请
    THREE-DIMENSIONAL COPPER NANOSTRUCTURE AND FABRICATION METHOD THEREOF 有权
    三维铜纳米结构及其制造方法

    公开(公告)号：US20150037597A1

    公开(公告)日：2015-02-05

    申请号：US14259628

    申请日：2014-04-23

    Applicant: Ajou University Industry-Academic Cooperation Foundation

    Inventor： Chang-Koo Kim ,  Sung-Woon Cho

    IPC: H01J37/32 ,  C23C18/38 ,  C23F1/12 ,  C23C18/32 ,  C23C18/31 ,  C23C18/18 ,  B22F1/00 ,  C23C18/42

    CPC classification number: C23F1/12 ,  B22F1/0018 ,  B22F1/0044 ,  B22F9/02 ,  B22F2001/0037 ,  B22F2304/05 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/034 ,  C23C18/1605 ,  C23C18/1657 ,  C23C18/1893 ,  C23C18/405 ,  C23F4/00 ,  H01J2237/0203 ,  H01J2237/3341 ,  H01L21/288 ,  Y10T29/49982

    Abstract: This invention relates to a method of fabricating a three-dimensional copper nanostructure, including manufacturing a specimen configured to include a SiO2 mask; performing multi-directional slanted plasma etching to form a three-dimensional etching structure layer on the specimen; performing plating so that a multi-directional slanted plasma etched portion of the specimen is filled with a metal; removing an over-plated portion and the SiO2 mask from the metal layer; and removing a portion of a surface of the specimen other than the metal which is the three-dimensional etching structure layer. In this invention, a uniform copper nanostructure array can be obtained by subjecting a large-area specimen disposed in a Faraday cage to multi-directional slanted plasma etching using high-density plasma, forming a copper film on the etched portion of the specimen, and removing an over-plated copper film and the SiO2 mask, and the diameter of the copper nanostructure can be arbitrarily adjusted, thus attaining high applicability.

    Abstract translation: 本发明涉及一种制造三维铜纳米结构的方法，包括制造被配置为包括SiO 2掩模的试样; 执行多方向倾斜等离子体蚀刻以在样本上形成三维蚀刻结构层; 进行电镀，使得样品的多方向倾斜等离子体蚀刻部分被金属填充; 从金属层去除过镀层部分和SiO 2掩模; 除去除了作为三维蚀刻结构层的金属以外的试样的表面的一部分。 在本发明中，通过对设在法拉第笼中的大面积试样进行多层倾斜等离子体蚀刻，使用高密度等离子体，在试样的蚀刻部分上形成铜膜，可以得到均匀的铜纳米结构体， 去除过镀铜膜和SiO 2掩模，并且可以任意调整铜纳米结构的直径，从而获得高适用性。

    Method for production of a microstructured molded object
    82.
    发明授权
    Method for production of a microstructured molded object 有权
    微结构化成型体的制造方法

    公开(公告)号：US08845911B2

    公开(公告)日：2014-09-30

    申请号：US13862023

    申请日：2013-04-12

    Applicant: Technische Universitaet Ilmenau

    Inventor： Joerg Hampl ,  Frank Weise ,  Gregor Schlingloff ,  Andreas Schober ,  Uta Fernekorn

    IPC: C03C15/00 ,  B81C99/00 ,  B44C1/22

    CPC classification number: B44C1/227 ,  B81B2201/06 ,  B81B2203/0346 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/034 ,  Y10T428/24281

    Abstract: A method is provided for producing a microstructured molded object that is intended for culturing of biological cells. According to this method, a plastically deformable first porous film is prepared, as well as a deformable second film and a deformable sacrificial film. The first, second and sacrificial film are placed in a stack. Next, the sacrificial film is subjected to pressure to press the stack into a mold. The mold has recesses, such that deformed regions in the form of cavities are produced in the sacrificial film, the first film and the second film, and undeformed regions remain. During the pressing of the film stack into the mold, the first film and the second film are joined to each other, so that they form a composite film. At least portions of the deformed regions of the second film are etched so that sections of the second film are chemically dissolved. In these sections of the second film, sections in the deformed regions of the first film are opened up, so that the pores in these sections are again free.

    Abstract translation: 提供了用于生产用于培养生物细胞的微结构模制物体的方法。 根据该方法，制备可塑性变形的第一多孔膜，以及可变形的第二膜和可变形的牺牲膜。 第一，第二和牺牲膜被放置在堆叠中。 接下来，牺牲膜经受压力以将叠层压入模具中。 模具具有凹部，使得在牺牲膜，第一膜和第二膜中产生空腔形式的变形区域，并且保留未变形的区域。 在将膜堆叠压入模具期间，第一膜和第二膜彼此接合，从而形成复合膜。 蚀刻第二膜的变形区域的至少部分，使得第二膜的部分化学溶解。 在第二膜的这些部分中，第一膜的变形区域中的部分被打开，使得这些部分中的孔再次游离。

    Method to fabricate a mould for lithography by nano-imprinting
    83.
    发明授权
    Method to fabricate a mould for lithography by nano-imprinting 有权
    通过纳米压印制造光刻模具的方法

    公开(公告)号：US08778195B2

    公开(公告)日：2014-07-15

    申请号：US12715801

    申请日：2010-03-02

    Applicant: Stéfan Landis

    Inventor： Stéfan Landis

    IPC: B44C1/22 ,  B82Y40/00

    CPC classification number: G03F7/2059 ,  B81C99/009 ,  B81C2201/0159 ,  B81C2201/034 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017

    Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.

    Abstract translation: 一种在三维中制造压印模具的方法，至少包括：a）在衬底中形成宽度为W和深度为h的至少一个沟槽，从而形成三个表面，包括至少一个沟槽的底部， 所述至少一个沟槽和所述衬底的剩余表面称为所述衬底的顶部; b）在所述至少一个沟槽中形成交替层，每个沟槽具有至少一部分垂直于所述衬底的第一材料和第二材料，所述第二材料可相对于所述第一材料选择性地蚀刻; 和c）选择性地刻蚀垂直于衬底的层的所述部分。

    METHOD FOR PRODUCING A THREE-DIMENSIONAL STRUCTURE AND THREE-DIMENSIONAL STRUCTURE
    84.
    发明申请
    METHOD FOR PRODUCING A THREE-DIMENSIONAL STRUCTURE AND THREE-DIMENSIONAL STRUCTURE 有权
    生产三维结构和三维结构的方法

    公开(公告)号：US20140023849A1

    公开(公告)日：2014-01-23

    申请号：US13983637

    申请日：2012-02-03

    Applicant: Thomas Lisec ,  Mato Knez

    Inventor： Thomas Lisec ,  Mato Knez

    IPC: B29C67/00

    CPC classification number: B29C67/0074 ,  B29C64/141 ,  B81C99/0085 ,  B81C2201/034 ,  C23C16/01 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/56 ,  Y10T428/249955

    Abstract: The invention relates to a method for producing a three-dimensional structure. The method according to the invention comprises the following steps: applying to or introducing into a carrier element (1; 7; 16) particles (2), a plurality of at least partially interlinked cavities being formed between the particles (2) and the particles (2) coming into contact in points of contact, and interconnecting the particles (2) in the points of contact by coating the system consisting of particles and the carrier element, the coat (4) produced during coating penetrating the cavities at least to some extent. The method according to the invention allows the production of three-dimensional structures with little effort.

    Abstract translation: 本发明涉及三维结构的制造方法。 根据本发明的方法包括以下步骤：向载体元件（1; 7; 16）施加或引入颗粒（2），在颗粒（2）和颗粒之间形成多个至少部分互连的空腔 （2）以接触点接触，并且通过涂覆由颗粒和载体元件组成的系统将接触点中的颗粒（2）互连，在涂覆期间产生的涂层（4）至少渗透到空腔中 程度。 根据本发明的方法允许以很小的努力生产三维结构。

    Mould for galvanoplasty and method of fabricating the same
    85.
    发明授权
    Mould for galvanoplasty and method of fabricating the same 有权
    电铸成形术的模具及其制造方法

    公开(公告)号：US08563226B2

    公开(公告)日：2013-10-22

    申请号：US12723147

    申请日：2010-03-12

    Applicant: Pierre Cusin ,  Clare Golfier ,  Jean-Philippe Thiebaud

    Inventor： Pierre Cusin ,  Clare Golfier ,  Jean-Philippe Thiebaud

    IPC: C25D1/00 ,  G03C5/00 ,  G03F7/20

    CPC classification number: C25D1/10 ,  B29C33/3842 ,  B81C99/009 ,  B81C2201/034

    Abstract: The invention relates to a method (3) of fabricating a mold (39, 39′) including the following steps: (a) depositing (9) an electrically conductive layer on the top (20) and bottom (22) of a wafer (21) made of silicon-based material; (b) securing (13) the wafer to a substrate (23) using an adhesive layer; (c) removing (15) one part (26) of the conductive layer from the top of the wafer (21); and (d) etching (17) the wafer as far as the bottom conductive layer (22) thereof in the shape (26) of the one part removed from the top conductive layer (22) to form at least one cavity (25) in the mold. The invention concerns the field of micromechanical parts, particularly, for timepiece movements.

    Abstract translation: 本发明涉及一种制造模具（39,39'）的方法（3），包括以下步骤：（a）在晶片的顶部（20）和底部（22）上沉积（9）导电层（ 21）由硅基材料制成; （b）使用粘合剂层将晶片固定（13）到基底（23）上; （c）从所述晶片（21）的顶部去除（15）所述导电层的一部分（26）; 以及（d）将所述晶片的所述底部导电层（22）蚀刻（17）至所述一个部分的形状（26）从顶部导电层（22）去除，以形成至少一个空腔（25） 模具。 本发明涉及微机械部件领域，特别涉及时计运动。

    METHOD OF FORMING HIERARCHICAL MICROSTRUCTURE USING PARTIAL CURING
    89.
    发明申请
    METHOD OF FORMING HIERARCHICAL MICROSTRUCTURE USING PARTIAL CURING 审中-公开
    使用部分固化形成分层微结构的方法

    公开(公告)号：US20120034390A1

    公开(公告)日：2012-02-09

    申请号：US13265521

    申请日：2009-04-20

    Applicant: Kahp Yang Suh ,  Hoon Eui Jeong ,  No Kyun Kwak

    Inventor： Kahp Yang Suh ,  Hoon Eui Jeong ,  No Kyun Kwak

    IPC: B82B3/00

    CPC classification number: B81C1/0046 ,  B81B2203/04 ,  B81C1/00206 ,  B81C2201/034

    Abstract: Disclosed is a method of forming a hierarchical microstructure using partial curing, which is simple in the manufacturing process and capable of forming a hierarchical structure without heterogeneous interfaces. To this end, there is provided a method of forming a hierarchical microstructure using partial curing, including forming a first polymer pattern having partial curing layers and forming a second polymer pattern on the first polymer pattern by using the partial curing layers. According to the present invention, a microstructure having various hierarchical structures can be formed by using a simple process. Accordingly, efficiency in various processes in which a microstructure having various hierarchical structures needs to be formed and economic efficiency can be improved. Furthermore, new functional materials, having not only super hydrophobicity, but also a high adhesive property even in a rough surface, can be developed.

    Abstract translation: 公开了一种使用部分固化形成分级微结构的方法，其制造过程简单并且能够形成没有异质界面的层次结构。 为此，提供了使用部分固化形成层状微结构的方法，包括通过使用部分固化层在第一聚合物图案上形成具有部分固化层并形成第二聚合物图案的第一聚合物图案。 根据本发明，可以通过使用简单的工艺形成具有各种分层结构的微结构。 因此，可以提高需要形成具有各种分层结构的微结构的各种工艺中的效率和经济效率。 此外，即使在粗糙表面上，也可以开发不仅具有超疏水性，而且具有高粘合性的新功能材料。

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