Method of etching the back side of a wafer
    82.
    发明申请
    Method of etching the back side of a wafer 审中-公开
    刻蚀晶片背面的方法

    公开(公告)号:US20100323524A1

    公开(公告)日:2010-12-23

    申请号:US12801594

    申请日:2010-06-16

    Inventor: Masashi Yoshida

    CPC classification number: B81C1/00801 B81C2201/0132 B81C2201/053

    Abstract: To etch the back side of a wafer, the front side of the wafer is first coated with a positive photoresist to form a protective film. The surface of the protective film is hardened by heating, or by heating and ultraviolet curing. The wafer is then placed in a plasma etching apparatus with the hardened surface of the protective film in contact with an electrode of the etching apparatus, and the back side of the wafer is patterned by plasma etching. When the etching is completed, the front side of the wafer is separated from the electrode and the wafer is removed from the plasma etching apparatus. The hardened positive photoresist prevents the wafer from sticking to the electrode.

    Abstract translation: 为了蚀刻晶片的背面,首先用正性光致抗蚀剂涂覆晶片的正面以形成保护膜。 保护膜的表面通过加热或加热和紫外线固化而硬化。 然后将晶片放置在等离子体蚀刻装置中,其中保护膜的硬化表面与蚀刻装置的电极接触,并且通过等离子体蚀刻对晶片的背面进行图案化。 当蚀刻完成时,晶片的前侧与电极分离,晶片从等离子体蚀刻装置中除去。 硬化的正性光致抗蚀剂防止晶片粘到电极上。

    Optical modulator
    83.
    发明授权
    Optical modulator 失效
    光调制器

    公开(公告)号:US07388701B2

    公开(公告)日:2008-06-17

    申请号:US11639987

    申请日:2006-12-15

    Abstract: An optical modulator having a junction layer is disclosed. An optical modulator may be provided which includes a substrate, an insulation layer positioned on the substrate, a ribbon layer positioned with an intermediate portion spaced apart from the insulation layer by a predetermined distance, a protective layer positioned on both ends of the ribbon layer, a junction layer positioned on the protective layer which has an adhesive property and which prevents the diffusion of gas, and a piezoelectric element joined with the protective layer by way of the junction layer interposed in-between which moves the intermediate portion of the ribbon layer toward and away from the substrate. In certain embodiments of the invention, the light diffraction property and reliability of the overall optical modulator can be maximized, by positioning a junction layer, having improved adhesion and capable of preventing the diffusion of oxygen, on the lower surface of the piezoelectric elements.

    Abstract translation: 公开了一种具有结层的光调制器。 可以提供光调制器,其包括基板,位于基板上的绝缘层,定位在与绝缘层隔开预定距离的中间部分的带层,位于带层两端的保护层, 位于保护层上的接合层,其具有粘合性并且防止气体的扩散;以及压电元件,其通过插入其间的接合层与保护层接合,从而使带状层的中间部分向着 并远离基板。 在本发明的某些实施例中,通过在压电元件的下表面上定位具有改进的附着力并且能够防止氧的扩散的接合层,可以最大化整个光学调制器的光衍射特性和可靠性。

    Microelectromechanical structure and a method for making the same
    85.
    发明授权
    Microelectromechanical structure and a method for making the same 有权
    微机电结构及其制造方法

    公开(公告)号:US07153443B2

    公开(公告)日:2006-12-26

    申请号:US10805610

    申请日:2004-03-18

    CPC classification number: B81C1/00793 B81B2201/042 B81C2201/053

    Abstract: A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of forming the structural layers, the sacrificial material is removed by a spontaneous vapor phase chemical etchant.

    Abstract translation: 本文公开了微结构及其制造方法。 微结构具有结构构件,其中至少一个包括金属间化合物。 在制造这样的微结构时,采用牺牲材料。 在完成形成结构层之后,牺牲材料通过自发气相化学腐蚀剂除去。

    Utilizing a protective plug to maintain the integrity of the FTP shrink hinge
    86.
    发明申请
    Utilizing a protective plug to maintain the integrity of the FTP shrink hinge 有权
    利用保护塞保持FTP收缩铰链的完整性

    公开(公告)号:US20060255424A1

    公开(公告)日:2006-11-16

    申请号:US11125473

    申请日:2005-05-10

    Abstract: As robust hinge post structure for use with torsional hinged devices such as micromirrors and method of manufacturing is disclosed. The fabrication process uses a protective layer such as BARC on the bottom of the aperture used to form the hinge post structure to protect an oxide layer during an etching step. The oxide layer, in turn protects the metal layer at the bottom of the aperture. Therefore, the metal layer, the oxide layer, and the protective layer prevent the erosion and/or pitting of the bottom electrode during a cleaning process, and provide additional support to the structure.

    Abstract translation: 公开了用于扭转铰接装置如微反射镜和制造方法的坚固的铰链柱结构。 制造工艺在用于形成铰链柱结构的孔的底部上使用诸如BARC的保护层,以在蚀刻步骤期间保护氧化物层。 氧化物层又保护孔的底部的金属层。 因此,金属层,氧化物层和保护层在清洁过程中防止底部电极的侵蚀和/或点蚀,并为结构提供额外的支撑。

    Method for making a microelectromechanical system using a flexure protection layer
    87.
    发明授权
    Method for making a microelectromechanical system using a flexure protection layer 失效
    制造使用挠曲保护层的微机电系统的方法

    公开(公告)号:US07056759B2

    公开(公告)日:2006-06-06

    申请号:US10833203

    申请日:2004-04-27

    Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

    Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后,剩余的挠曲保护层被去除。

    Methods for dicing a released CMOS-MEMS multi-project wafer
    88.
    发明申请
    Methods for dicing a released CMOS-MEMS multi-project wafer 失效
    用于切割已发布的CMOS-MEMS多工程晶圆的方法

    公开(公告)号:US20060105545A1

    公开(公告)日:2006-05-18

    申请号:US11270491

    申请日:2005-11-10

    CPC classification number: B81C1/00896 B81C2201/053

    Abstract: Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to cover all cavities and structures on the wafer, such that the photoresist will protect the released structures free from the chipping, vibrations, and damages in the diamond blade dicing process. In another method, a laser dicing system is utilized to scribe the multi-project wafer placed on a platform, and by precisely controlling the platform moving-track, the dicing path can be programmed to any required shape and region, even it is not straight. In addition, the wafer backside is mounted on a blue-tape at the beginning to enhance the process reliability.

    Abstract translation: 提出了一种简单而实用的CMOS-MEMS多工程晶圆切割方法。 在该晶片上,微加工微结构已经被制造和释放。 在一种方法中,光致抗蚀剂在整个晶片表面上旋转,并且该光致抗蚀剂足够厚以覆盖晶片上的所有空腔和结构,使得光致抗蚀剂将保护释放的结构免于碎裂,振动和损坏 金刚石刀片切割工艺。 在另一种方法中,使用激光切割系统来划分放置在平台上的多工程晶片,并且通过精确地控制平台移动轨迹,切割路径可以被编程到任何所需的形状和区域,即使不是直的 。 此外,晶片背面一开始就安装在蓝带上,以提高工艺的可靠性。

    Enhancement of fabrication yields of nanomechanical devices by thin film deposition
    89.
    发明授权
    Enhancement of fabrication yields of nanomechanical devices by thin film deposition 有权
    通过薄膜沉积增强纳米机械装置的制造产量

    公开(公告)号:US07041611B2

    公开(公告)日:2006-05-09

    申请号:US10802259

    申请日:2004-03-17

    Abstract: A protective film is applied onto a nanostructural feature supported on a sacrificial layer by energy beam assisted deposit of material from a vapor through which the beam passes. A wet etchant is applied to etch away the sacrificial layer beneath the nanostructural feature to leave it suspended as a cantilever or bridge. The film protects the structural feature from damage during etching, and may be removed after the wet etching process is completed.

    Abstract translation: 通过能量束辅助沉积材料从蒸汽通过的蒸气将保护膜施加到支撑在牺牲层上的纳米结构特征上。 施加湿蚀刻剂以蚀刻除了纳米结构特征之下的牺牲层以使其悬挂为悬臂或桥。 该膜在蚀刻期间保护结构特征免受损坏,并且可以在湿蚀刻工艺完成之后去除。

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