Abstract:
The invention relates to a blocking member to be placed in the diffraction plane of a TEM. It resembles the knife edge used for single sideband imaging, but blocks only electrons deflected over a small angle. As a result the Contrast Transfer Function of the TEM according to this invention will equal that of a single sideband microscope at low frequencies and that of a normal microscope for high frequencies. Preferable the highest frequency blocked by the blocking member is such that a microscope without the blocking member would show a CTF of 0.5.
Abstract:
The invention concerns a phase plate for electron optical imaging, wherein the zero beam (4) is phase-shifted in order to obtain an image with optimum contrast through interference with the diffracted electron beams (5, 5′). The shading of diffracted electron beams (5, 5′) is kept to a minimum and shading that cannot be reconstructed from the obtained image data is prevented. This is achieved in that the electrode (1′) is designed as a shielded conductor (7), which is disposed to extend from a mounting (8) in a substantially radial direction towards the area of the zero beam (4), wherein the shielded conductor (7) has an end (9) in front of the area of the zero beam (4) such that a field (6) is formed between the conductor (7) and the shielding (10) surrounding it, which overlaps this area. The invention also concerns an imaging method for complete reconstruction of the image and an electron microscope (12) which is provided with the phase plate (1).
Abstract:
An SEM control device comprises: an image acquisition unit that acquires by an SEM a plurality of images of a prescribed object, each of which is formed of a plurality of pixels lined up in a first direction, at a plurality of positions in a second direction perpendicular to the first direction; a variation range calculation unit that obtains maximum values and minimum values of gray scale values among the plurality of images at respective locations of the plurality of pixels, and calculates a variation range of the maximum values and a variation range of the minimum values for the plurality of pixels; and a brightness/contrast adjustment unit that adjusts brightness and contrast of the SEM so as to minimize difference between the variation range of the maximum values and the variation range of the minimum values.
Abstract:
The pattern observation method for observing a pattern which is formed on an insulating film, includes: irradiating an entirety of the pattern with a charged particle beam, to obtain a temporary image of the pattern which has region information of a convex pattern and a concave pattern; irradiating the convex and concave patterns with the charged particle beam having a first and second voltages based on the region information, to thereby form an electric field between a top surface of the convex pattern and a bottom surface of the concave pattern so that charged particles emitted from the bottom surface of the concave pattern may be drawn out to an outside of the pattern; and irradiating the entirety of the pattern with the charged particle beam to obtain an image of the pattern having the information of the bottom surface of the concave pattern.
Abstract:
A method of inspecting for plug-to-plug short (short circuit) defects on a sample is disclosed. A charged particle beam for imaging the sample is repeatedly line-scanned over the sample with a line-to-line advancement direction perpendicular to the line-scan direction. The method includes scanning the sample with a line-to-line advancement along a first and a second direction, to obtain a first and a second image of the sample, respectively. Then, the method includes identifying plug patterns, represented in the obtained images with abnormal grey levels, as abnormal plug patterns. Next, the method compares the locations of the abnormal plug patterns to determine the presence of plug-to-plug short defects on the sample.
Abstract:
A method for improving the resolution of STEM images of thick samples. In STEM, the diameter of the cross-over depends on the opening half-angle α of the beam and can be as low as 0.1 nm. For optimum resolution an opening half-angle is chosen at which the diameter of the cross-over R(α) shows a minimum. For thick samples the resolution is, for those parts of the sample removed from the cross-over plane, limited by the convergence of the beam, resulting in a diameter D of the beam at the surface of the sample. The opening angle is chosen to balance the contribution of convergence and of diameter of the cross-over by choosing an opening half-angle smaller than the optimum opening half-angle. Effectively the sample is then scanned with a beam that has a substantially constant diameter over the length of the sample material through which the electrons have to travel.
Abstract:
A particle beam microscope includes an illumination system generating a particle beam having a ring-shaped conical configuration. A selective detection system is configured to selectively detect one of two groups of particles having traversed the object region. The first group of particles includes the particles that traversed the object region un-scattered or scattered by a small scattering amount. The second group of particles includes particles scattered in the object region by a greater scattering amount.
Abstract:
The invention concerns a phase plate for electron optical imaging, wherein the zero beam (4) is phase-shifted in order to obtain an image with optimum contrast through interference with the diffracted electron beams (5, 5′). The shading of diffracted electron beams (5, 5′) is kept to a minimum and shading that cannot be reconstructed from the obtained image data is prevented. This is achieved in that the electrode (1′) is designed as a shielded conductor (7), which is disposed to extend from a mounting (8) in a substantially radial direction towards the area of the zero beam (4), wherein the shielded conductor (7) has an end (9) in front of the area of the zero beam (4) such that a field (6) is formed between the conductor (7) and the shielding (10) surrounding it, which overlaps this area. The invention also concerns an imaging method for complete reconstruction of the image and an electron microscope (12) which is provided with the phase plate (1).
Abstract:
An electric charged particle beam microscope measures a geometric distortion at an arbitrary magnification with high precision, and corrects the geometric distortion. A geometric distortion at a first magnification is measured as an absolute distortion based on a standard specimen having a cyclic structure. A microscopic structure specimen is photographed at a geometric distortion measured first magnification and at a geometric distortion unmeasured second magnification. The image at the first magnification is equally transformed to the second magnification to generate a scaled image. The geometric distortion at the second magnification is measured as a relative distortion based on the scaled image. The absolute distortion at the second magnification is obtained on the basis of the absolute distortion at the first magnification and the relative distortion at the second magnification. Subsequently, the second magnification is replaced with the first magnification, and the relative distortion measurement is repeated.
Abstract:
A method for improving the resolution of STEM images of thick samples. In STEM, the diameter of the cross-over depends on the opening half-angle α of the beam and can be as low as 0.1 nm. For optimum resolution an opening half-angle is chosen at which the diameter of the cross-over R(α) shows a minimum. For thick samples the resolution is, for those parts of the sample removed from the cross-over plane, limited by the convergence of the beam, resulting in a diameter D of the beam at the surface of the sample. The opening angle is chosen to balance the contribution of convergence and of diameter of the cross-over by choosing an opening half-angle smaller than the optimum opening half-angle. Effectively the sample is then scanned with a beam that has a substantially constant diameter over the length of the sample material through which the electrons have to travel.