公开(公告)号：US20050249655A1

公开(公告)日：2005-11-10

申请号：US11151393

申请日：2005-06-13

Applicant: Suresh Vagarali ,  Steven Webb ,  William Jackson ,  William Banholzer ,  Thomas Anthony ,  George Kaplan

Inventor： Suresh Vagarali ,  Steven Webb ,  William Jackson ,  William Banholzer ,  Thomas Anthony ,  George Kaplan

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0695

Abstract: A method for changing the color of colored Type I natural diamonds includes placing a Type I natural diamond into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to change or improve the color of the diamond.

Abstract translation: 改变有色I型天然钻石的颜色的方法包括将I型天然金刚石放置在高压/高温（HP / HT）压机中，在升高的压力和升高的温度下，足以改变或改善 钻石。

公开(公告)号：US20050136667A1

公开(公告)日：2005-06-23

申请号：US10926576

申请日：2004-08-25

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: B01J3/06 ,  B23D61/18 ,  B23D65/00 ,  B23P15/28 ,  B24D3/08 ,  B24D7/06 ,  B24D18/00 ,  B24D99/00 ,  C04B35/52 ,  C22C1/05 ,  C22C26/00 ,  E21B10/56 ,  E21B10/567 ,  C09K3/14 ,  H01L21/302 ,  H01L21/461

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B01J2203/0685 ,  B22F2005/001 ,  B22F2999/00 ,  B23D61/18 ,  B23D65/00 ,  B23P15/28 ,  B24D3/08 ,  B24D7/066 ,  B24D18/00 ,  B24D99/005 ,  B24D2203/00 ,  C04B35/52 ,  C09K3/1445 ,  C22C1/051 ,  C22C26/00 ,  C22C2204/00 ,  E21B10/5676 ,  B22F2207/03 ,  B22F1/0011 ,  B22F3/004 ,  B22F2003/1046

Abstract: An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive I-,articles with high yield and a narrow size distribution. The synthesis method includes forming a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. A plurality of crystalline seeds is placed in a predetermined pattern in the mixture or one of the layers to form a growth precursor. The growth precursor is maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of synthetic octahedral diamonds and improved growth conditions generally. As a result, the grown superabrasive particles typically have a high yield of high quality particles and a narrow distribution of particle sizes.

Abstract translation: 合成超级磨料颗粒的改进方法提供高质量的工业超级磨料I-，高产量和窄尺寸分布的制品。 合成方法包括形成基本上均匀的原料和催化剂材料或原料和金属催化剂层的混合物。 将多个晶体种子以预定图案放置在混合物或其中一层中以形成生长前体。 生长前体保持在超磨料晶体在热力学稳定的温度和压力下达足以达到所需生长程度的时间。 有利地，结晶晶种的图案化放置和公开的方法允许生产合成八面体菱形和通常改善的生长条件。 结果，生长的超级磨料颗粒通常具有高产率的高质量颗粒和窄的粒度分布。

公开(公告)号：US06908674B2

公开(公告)日：2005-06-21

申请号：US09799192

申请日：2001-03-05

Applicant: Suresh Shankarappa Vagarali ,  Thomas Richard Anthony ,  John Casey ,  Robert Charles DeVries ,  Stephen Lee Dole ,  John William Lucek ,  Alan Cameron Smith ,  Biju Varghese ,  Steven William Webb

Inventor： Suresh Shankarappa Vagarali ,  Thomas Richard Anthony ,  John Casey ,  Robert Charles DeVries ,  Stephen Lee Dole ,  John William Lucek ,  Alan Cameron Smith ,  Biju Varghese ,  Steven William Webb

IPC: B01J3/06 ,  C01B33/20 ,  C01B33/26 ,  B32B5/16

CPC classification number: C01B33/26 ,  B01J3/062 ,  B01J2203/068 ,  C01B33/20 ,  Y10T428/2982 ,  Y10T428/2996

Abstract: A jadeite material has a thickness in excess of about 1.0 mm and CIELAB indices of L*>42, a* +6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/IO optical transmission ratio of over 40%. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSi2O6, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000° C. for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.

Abstract translation: 翡翠材料的厚度超过约1.0mm，CIELAB指数L *> 42，a * <-6和b *> + 6。 翡翠材料的晶粒尺寸小于约30微米，是等轴晶粒结构。 翡翠材料具有在500和565nm之间的光传输峰值，其中I / I / O光透射率超过40％。 制造翡翠材料的第一步是将玻璃块包裹，由HP / HT转化为翡翠，并具有标称组成的NaAlSi 2 O 6 6，与石墨 或折射金属片。 将包裹的玻璃块放置在HP / HT装置中，快速加热，并在其中进行超过约3GPa的压力和超过约1000℃的温度，足以将玻璃块转化成翡翠 。 然后将翡翠材料冷却并随后释放压力。

公开(公告)号：US06902716B2

公开(公告)日：2005-06-07

申请号：US10282779

申请日：2002-10-29

Applicant: Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

Inventor： Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

IPC: C30B25/10 ,  C30B33/00 ,  B01J3/06 ,  B01J3/08

CPC classification number: C30B33/00 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605

Abstract: The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species. This novel method is capable of forming diamond tip arrays over large areas with great uniformity and high reproducibility. The diamond tips prepared are single diamond crystals with their [001] axes parallel each other and normal to the substrate surface. The invented technology enables the control of the apical angle, radius and density of the diamond tips.

Abstract translation: 本发明涉及产生尖锐的单晶金刚石尖端和这些尖端的阵列及其制造技术。 本发明将合成金刚石膜的沉积与反应性蚀刻工艺相结合。 在制备菱形取向和具有相当方向性离子的反应性蚀刻环境的情况下，可以制造具有不同顶角的单晶金刚石尖端。 通过随后的反应蚀刻，在金字塔形的[001]纹理金刚石膜上制造顶尖角不超过约28°，尖端半径小于50nm的非常锋利的金刚石尖端。该技术基于选择性蚀刻 通过蚀刻环境的活化组分，特别是基于原子氢，以类似于离子轰击的方式，杂交碳和杂原子的碳，这有助于 整体蚀刻和金刚石局部转化为石墨相，促进用化学活化物质进一步蚀刻。 这种新方法能够在大面积上形成金刚石尖端阵列，具有很好的均匀性和高重现性。 制备的金刚石尖端是单晶金刚石晶体，其[001]轴线彼此平行并垂直于基板表面。 本发明的技术能够控制金刚石尖端的顶角，半径和密度。

公开(公告)号：US20050098089A1

公开(公告)日：2005-05-12

申请号：US10892131

申请日：2004-07-16

Applicant: Wataru Utsumi ,  Hiroyuki Saitoh ,  Katsutoshi Aoki

Inventor： Wataru Utsumi ,  Hiroyuki Saitoh ,  Katsutoshi Aoki

IPC: B01J3/06 ,  C01B21/06 ,  C30B1/00 ,  C30B11/02 ,  C30B29/38 ,  C30B29/40 ,  H01L29/22 ,  H01L33/00

CPC classification number: C30B29/40 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/0685

Abstract: A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.

Abstract translation: 一种制造单晶氮化镓的方法，包括以6×10 4大气压之间的高压进行氮化镓的一致熔融的步骤。 和10×10 4个大气压。 并在2200℃至2500℃的高温下，然后在所述高压下缓慢冷却得到的氮化镓熔体。

公开(公告)号：US20050086870A1

公开(公告)日：2005-04-28

申请号：US10974867

申请日：2004-10-26

Applicant: Noriyuki Kumasaka

Inventor： Noriyuki Kumasaka

IPC: B01J3/08 ,  B24B37/00 ,  C01B31/06 ,  C09K3/14 ,  B24D3/02 ,  B01J3/06 ,  C09C1/68

CPC classification number: B01J3/08 ,  C01B32/28 ,  C09K3/1409

Abstract: Polishing particles are made of artificial diamond produced by a shock method, having density of 3.0-3.35 g/cm3 and including secondary particles with average particle diameter of 30 nm-500 nm. Such polishing particles are produced by firstly obtaining a product containing artificial diamond by a shock method, then subjecting this product to an acid treatment by using one or more strong acids such as concentrated sulfuric acid, concentrated nitric acid and concentrated hydrochloric acid to thereby remove impurities from and wash the product, thereafter subjecting the product to a classification process to thereby separate artificial diamond of a first kind having secondary particles with particle diameters of 30 nm-500 nm and artificial diamond of a second kind having secondary particles with particle diameters in excess of 500 nm and selecting artificial diamond of a third kind having density of 3.0-3.35 g/cm3 out of the artificial diamond of the first kind. It is the artificial diamond of the third kind that is to be used as the diamond polishing particles.

Abstract translation: 抛光颗粒由人造金刚石制造，其通过冲击法制备，密度为3.0-3.35g / cm 3，并且包括平均粒径为30nm-500nm的二次颗粒。 通过首先通过冲击法获得含有人造金刚石的产品，然后通过使用一种或多种强酸例如浓硫酸，浓硝酸和浓盐酸对该产物进行酸处理，从而除去杂质， 然后对产品进行洗涤，然后对产品进行分级处理，从而分离具有粒径为30nm-500nm的二次粒子的第一种人造金刚石和具有粒径超过二次粒子的第二种人造金刚石 并选择第三类人造金刚石，其中第三种人造金刚石具有3.0-3.35g / cm 3的密度，出自第一类人造金刚石。 是用作金刚石抛光颗粒的第三种人造金刚石。

公开(公告)号：US20050032370A1

公开(公告)日：2005-02-10

申请号：US10499649

申请日：2001-12-28

Applicant: Osamu Fukunaga ,  Hiroshi Okubo ,  Toshiaki Sogabe ,  Tetsuro Tojo

Inventor： Osamu Fukunaga ,  Hiroshi Okubo ,  Toshiaki Sogabe ,  Tetsuro Tojo

IPC: B01J3/06 ,  B30B11/00 ,  C01B31/06 ,  C04B35/52 ,  C04B35/528 ,  C04B35/645 ,  H01L21/302 ,  H01L21/461

CPC classification number: C04B35/645 ,  B01J3/062 ,  B01J3/065 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/0655 ,  B30B11/004 ,  B30B11/007 ,  C04B35/52 ,  C04B35/522 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607

Abstract: A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.

Abstract translation: 通过高压合成法制造含有硼的半导体金刚石的方法，其中将要转化为半导体金刚石的石墨材料与形成并烧制的硼或硼化合物混合，使得所得石墨材料含有 硼组分均匀地分散在其中并且具有增强的堆积密度，高纯度和降低的氢含量。

公开(公告)号：US6124573A

公开(公告)日：2000-09-26

申请号：US473147

申请日：1999-12-28

Applicant: David R. Hall ,  Joe Fox ,  Ronald Brian Crockett ,  Damon B. Crockett

Inventor： David R. Hall ,  Joe Fox ,  Ronald Brian Crockett ,  Damon B. Crockett

IPC: B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B15/34 ,  F27D21/00 ,  F27D99/00 ,  H05B3/00 ,  H05B3/14 ,  H05B5/10 ,  F27B5/08 ,  F27B5/14 ,  F27D1/00

CPC classification number: F27D99/0006 ,  B01J3/002 ,  B01J3/048 ,  B01J3/06 ,  B30B15/34 ,  H05B3/00 ,  H05B3/145 ,  B01J2219/00058 ,  B01J2219/00135 ,  F27D2099/0008 ,  F27D21/0014

Abstract: This invention presents a high-pressure high-temperature reaction vessel having a metallized graphite heater for improved performance. The metallized heater consists of a graphite tube comprising a refractory metal. Metallization of the graphite heater is accomplished either by coating the graphite tube with a refractory metal, by intermixing a refractory metal in the graphite, or by positioning a refractory metal sheet or cylinder adjacent the graphite heater. The refractory metal constrains the graphite heater, adds toughness to the heater, shields the heater from outside contamination, and provides an electrical contact for a thermocouple.

Abstract translation: 本发明提供一种具有金属化石墨加热器以提高性能的高压高温反应容器。 金属化加热器由包含难熔金属的石墨管组成。 石墨加热器的金属化可以通过用耐火金属涂覆石墨管，通过将难熔金属混合在石墨中，或者通过在石墨加热器附近定位难熔金属片或圆筒来实现。 难熔金属约束石墨加热器，增加加热器的韧性，屏蔽加热器免受外部污染，并为热电偶提供电气接触。

公开(公告)号：US5997273A

公开(公告)日：1999-12-07

申请号：US521389

申请日：1995-08-01

Applicant: Henry Louis Laquer

Inventor： Henry Louis Laquer

IPC: B01J3/06 ,  B22F3/03 ,  B22F3/12 ,  B22F3/15 ,  B28B3/00 ,  B28B3/02 ,  B30B11/00 ,  C04B35/645 ,  B28B11/00

CPC classification number: B01J3/06 ,  B22F3/03 ,  B22F3/1208 ,  B22F3/15 ,  B28B3/003 ,  B28B3/006 ,  B28B3/025 ,  B30B11/001 ,  C04B35/6455

Abstract: Apparatus and procedures are presented for forging, or hot working bulk ceramics, including high temperature superconductors and other sensitive materials, under precisely controlled conditions of pressure, temperature, atmospheric composition, and strain rate. A capsule with massive end plates and an independent gas supply is located in a modified hot isostatic press (HIP). Essentially uniaxial deformation of a pre-compacted disc with forces of up to 500,000 Newtons (50 tons) and at temperatures of up to 1000 C. can be achieved. The separate gas supply to the capsule can maintain a specified gaseous atmosphere around the disc, up to the operating pressure of the HIP. The apparatus is designed to tolerate partial oxygen pressures of up to 20%.

Abstract translation: 在压力，温度，大气成分和应变率的精确控制条件下，提供锻造或热加工散装陶瓷（包括高温超导体和其他敏感材料）的设备和程序。 具有大量端板和独立气体供应的胶囊位于改进的热等静压机（HIP）中。 可以实现具有高达500,000牛顿（50吨）和高达1000℃的温度的预压实盘的基本单轴变形。 到胶囊的单独的气体供应可以在盘周围保持特定的气体气氛，直到HIP的操作压力。 该设备被设计为容忍高达20％的部分氧气压力。

公开(公告)号：US5902563A

公开(公告)日：1999-05-11

申请号：US960929

申请日：1997-10-30

Applicant: John M. Pinneo

Inventor： John M. Pinneo

IPC: B01J19/12 ,  C23C16/27 ,  C23C16/509 ,  C30B25/10 ,  B01J3/06

CPC classification number: C23C16/272 ,  B01J19/122 ,  C23C16/509 ,  C30B25/105 ,  B01J2219/0894

Abstract: Processes are disclosed for performing non-microwave, non-arcjet plasma-assisted chemical vapor deposition of diamond in which substantially no particles impact the growing diamond surface with energies sufficient to prevent the growth of diamond. The energies of the particles are limited by selecting frequency, pressure, magnetic fields, electrical bias, or a combination thereof to the deposition region of the chamber. Diamond materials formed by these processes are also disclosed.

Abstract translation: 公开了用于执行非微波，非电弧喷射等离子体辅助化学气相沉积金刚石的方法，其中基本上没有颗粒以足以防止金刚石生长的能量撞击生长的金刚石表面。 颗粒的能量通过选择频率，压力，磁场，电偏压或其组合来限制室的沉积区域。 还公开了由这些方法形成的金刚石材料。