Composite heater and chill plate
    2.
    发明申请
    Composite heater and chill plate 审中-公开
    复合加热器和冷却板

    公开(公告)号:US20070251456A1

    公开(公告)日:2007-11-01

    申请号:US11414730

    申请日:2006-04-27

    CPC classification number: H01L21/67109

    Abstract: An integrated system for baking and chilling wafers includes a heater for heating a wafer to an elevated temperature, a chiller for cooling the wafer, and a shuttle operatively connected to the heater and the chiller for transferring the wafer between the heater and the chiller. The chiller further includes a low thermal mass wafer support for providing support to a bottom surface of a wafer and a chill plate coupled to the low thermal mass wafer support for cooling the wafer. The low thermal mass wafer support has a higher thermal conductivity in the plane parallel to the bottom surface of the wafer than in the direction perpendicular to the bottom surface of the wafer. The low thermal mass wafer support can further include a plurality of proximity pins for supporting the wafer.

    Abstract translation: 用于烘烤和冷却晶片的集成系统包括用于将晶片加热到高温的加热器,用于冷却晶片的冷却器和可操作地连接到加热器的梭子和用于在加热器和冷却器之间传送晶片的冷却器。 冷却器还包括用于向晶片的底表面提供支撑的低热质量晶片支撑件和耦合到低热质量晶片支撑件以冷却晶片的冷却板。 低热质量晶片支架在垂直于晶片底表面的方向上平行于晶片底表面的平面具有较高的热导率。 低热质量晶片支撑件还可以包括用于支撑晶片的多个接近销。

    Electrostatic chuck for track thermal plates
    3.
    发明申请
    Electrostatic chuck for track thermal plates 审中-公开
    轨道热板用静电吸盘

    公开(公告)号:US20060238954A1

    公开(公告)日:2006-10-26

    申请号:US11153974

    申请日:2005-06-15

    CPC classification number: H02N13/00 H01L21/67103 H01L21/6831

    Abstract: A chuck for a semiconductor workpiece features integrated resistive heating and electrostatic bipolar chucking elements on a thermal pedestal. These integrated heating and chucking elements maintain wafer flatness, as well as uniformity of an underlying gap accommodating a thermal gas between the workpiece and the chuck. In accordance with one embodiment of the present invention, a laminated Kapton wafer heater is attached to the top of the thermal surface, under the wafer: At least two electrical voltage zones are isolated within the heater, in order to create a chucking force between the chuck and the wafer without having to contact the wafer with an electrical conductor. These voltage zones can be created by using separate conducting elements as well as by imposing a DC bias on zones including the resistive heating elements.

    Abstract translation: 用于半导体工件的卡盘在热基座上具有集成的电阻加热和静电双极夹紧元件。 这些集成的加热和夹紧元件保持晶圆平坦度,以及在工件和卡盘之间容纳热气体的底部间隙的均匀性。 根据本发明的一个实施例,层压的Kapton晶片加热器附着在晶片下面的热表面的顶部:至少两个电压区在加热器内隔离,以便在加热器之间产生夹紧力 卡盘和晶片,而不必与电导体接触晶片。 这些电压区可以通过使用分离的导电元件以及通过在包括电阻加热元件的区域上施加DC偏压来产生。

    Method of proximity pin manufacture
    8.
    发明申请
    Method of proximity pin manufacture 审中-公开
    接近销的制造方法

    公开(公告)号:US20070246839A1

    公开(公告)日:2007-10-25

    申请号:US11408465

    申请日:2006-04-21

    CPC classification number: H01L21/6875 H01L21/67011

    Abstract: A method and apparatus related to a substrate support structure are provided. In accordance with one embodiment of the present invention, a method for manufacturing a substrate support structure including proximity pins and apparatus for supporting a substrate inside a semiconductor processing equipment are provided. The method includes providing a plate assembly comprising a plate and a plate surface and forming a plurality of recessed regions in the plate surface. Additionally, the method includes filling the recessed regions with a bonding material including epoxy material and placing a plurality of support members into the epoxy-coated recessed regions. The method further includes pushing the support members with a flat plate held up from the surface by shims to provide a uniform local height of the support members, followed by a curing step to fix the supporting members to the recessed regions.

    Abstract translation: 提供了与基板支撑结构相关的方法和装置。 根据本发明的一个实施例,提供了一种用于制造衬底支撑结构的方法,其包括用于在半导体加工设备内部支撑衬底的邻近销和装置。 该方法包括提供包括板和板表面的板组件,并在板表面中形成多个凹陷区域。 此外,该方法包括用包括环氧材料的接合材料填充凹陷区域,并将多个支撑构件放置到环氧树脂涂覆的凹陷区域中。 该方法还包括通过垫片将平板从表面推压以提供支撑构件,以提供支撑构件的均匀的局部高度,随后是将支撑构件固定到凹陷区域的固化步骤。

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