公开(公告)号：US4994164A

公开(公告)日：1991-02-19

申请号：US453032

申请日：1989-12-11

Applicant: Henri Bernardet ,  Chantal Thiebaut

Inventor： Henri Bernardet ,  Chantal Thiebaut

IPC: H01J37/06 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08

Abstract: A metallurgic implantation apparatus of metal ions having a large emitting surface, a considerable flux and a controllable implantation depth comprises within an implantation chamber held in vacuo at least one vacuum arc ion source (1, 2, 3, 4) from which the ions (5) are extracted and projected onto a target plate (9) by means of an extraction and focusing electrode (6,7) and of an acceleration electrode (8) polarized at a very high and at a low voltage, respectively. The target plate (9) bombarded by the projection of ions emits a flux of secondary electrons, which are repelled by a suppression electrode (10) polarized negatively with respect to the target plate connected to ground.

Abstract translation: 具有大的发射表面，相当大的通量和可控的注入深度的金属离子的冶金注入装置包括在真空中保持真空电弧离子源（1,2,3,4）的注入室内，离子源（ 5）通过提取和聚焦电极（6,7）和分别以非常高和低电压极化的加速电极（8）被提取并投影到目标板（9）上。 由离子投影轰击的目标板（9）发射二次电子束，其被相对于连接到地面的目标板负偏振的抑制电极（10）排斥。