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1.发明授权公开(公告)号：US08633858B2
公开(公告)日：2014-01-21
申请号：US13015254
申请日：2011-01-27
Applicant: Deepukumar M. Nair , Kumaran Manikantan Nair , Mark Frederick McCombs , Joao Carlos Malerbi , James M. Parisi
Inventor： Deepukumar M. Nair , Kumaran Manikantan Nair , Mark Frederick McCombs , Joao Carlos Malerbi , James M. Parisi
IPC: H01Q1/38
CPC classification number: C03C3/068 , C03C3/19 , H01L23/66 , H01L25/0655 , H01L25/16 , H01L2223/6627 , H01L2223/6677 , H01L2224/16225 , H01L2924/09701 , H01L2924/19032 , H01L2924/3011 , H01Q21/065 , H05K1/0306 , H05K3/4688
Abstract: The invention relates to methods of forming high frequency receivers, transmitters and transceivers from Low Temperature Co-fired Ceramic (LTCC) materials. Two or more layers of a low k thick film dielectric tape and in contact with each other and two or more layers of a low k thick film dielectric tape and in contact with each other form a low k high k LTCC structure with improved properties and the ability to support economical mass production techniques for high frequency transceivers. The invention also relates to the LTCC receiving, transmitting and transceiving structures and the devices made from such structures.
Abstract translation: 本发明涉及从低温共烧陶瓷（LTCC）材料形成高频接收器，发射器和收发器的方法。 两层或多层低k厚膜电介质胶带彼此接触和两层或多层低k厚膜电介质胶带并彼此接触形成具有改进性能的低k高k LTCC结构， 支持高频收发器的经济批量生产技术的能力。 本发明还涉及LTCC接收，发射和收发结构以及由这种结构制成的设备。
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2.发明授权公开(公告)号：US08742262B2
公开(公告)日：2014-06-03
申请号：US13483837
申请日：2012-05-30
Applicant: Scott E. Gordon , Elizabeth D. Hughes , Joao Carlos Malerbi , Deepukumar M. Nair , Kumaran Manikantan Nair , James M. Parisi , Michael Arnett Smith , Ken E. Souders
Inventor： Scott E. Gordon , Elizabeth D. Hughes , Joao Carlos Malerbi , Deepukumar M. Nair , Kumaran Manikantan Nair , James M. Parisi , Michael Arnett Smith , Ken E. Souders
CPC classification number: H01L23/15 , H01L23/49822 , H01L2924/0002 , H01L2924/09701 , H05K1/165 , H05K3/4061 , H05K3/4629 , H05K2201/0317 , H05K2201/0352 , H01L2924/00
Abstract: Disclosed herein is a multilayer low temperature co-fired ceramic (LTCC) structure comprising a multilayer low temperature co-fired ceramic comprising glass-ceramic dielectric layers with screen printed thick film inner conductors on portions of the layers and with thin film outer conductors deposited on the upper and lower outer surfaces of the LTCC. At least a portion of the thin film outer conductors is patterned in the form of lines and the spacings between the lines are less then 50 μm. Also disclosed is a process for making the LTCC structure.
Abstract translation: 本文公开了一种多层低温共烧陶瓷（LTCC）结构，其包括多层低温共烧陶瓷，其包含玻璃陶瓷电介质层，其中丝网印刷的厚膜内导体在层的部分上，并且薄膜外导体沉积在 LTCC的上下外表面。 薄膜外导体的至少一部分以线的形式图案化，并且线之间的间距小于50μm。 还公开了制造LTCC结构的方法。
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公开(公告)号：US20090085808A1
公开(公告)日：2009-04-02
申请号：US11904986
申请日：2007-09-28
Applicant: Matthew R. Walsh , Deepukumar M. Nair , David W. Zimmerman , Benjamen E. Haffke , Scott D. Brandenburg , Charles I. Delheimer , Michael E. Miller , Bruce Wayne Butler
Inventor： Matthew R. Walsh , Deepukumar M. Nair , David W. Zimmerman , Benjamen E. Haffke , Scott D. Brandenburg , Charles I. Delheimer , Michael E. Miller , Bruce Wayne Butler
IPC: H01Q1/38
CPC classification number: H01L23/66 , H01L2223/6627 , H01L2223/6633 , H01L2223/6677 , H01L2924/1617 , H01L2924/19032 , H01L2924/19039 , H01P5/107
Abstract: A microwave communication package is constructed on an electrically conducting base plate having a first side defining a base plate cavity, with an antenna apparatus mounted on an opposite, second side. A dielectric substrate on the first side of the base plate covers the base plate cavity; and sealing apparatus contacting the dielectric substrate and the base plate completely around the base plate cavity hermetically seals the cavity. Circuitry mounted on a surface of the substrate within the base plate cavity includes one or more microstrip lines communicating components to one or more waveguides comprising openings extending through the base plate; and the waveguides are coupled at their opposite ends to the antenna apparatus.
Abstract translation: 微波通信封装构造在具有限定基板空腔的第一侧的导电基板上，天线装置安装在相对的第二侧上。 基板的第一侧的电介质基板覆盖基板空腔; 并且密封装置使绝缘基板和基板完全围绕底板腔体密封，从而密封空腔。 安装在基板腔内的基板表面上的电路包括一个或多个微带线，其将部件传送到一个或多个包括穿过基板的开口的波导; 并且波导在其相对端耦合到天线装置。
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4.发明申请公开(公告)号：US20080142911A1
公开(公告)日：2008-06-19
申请号：US11639001
申请日：2006-12-14
Applicant: Carl W. Berlin , Deepukumar M. Nair , David W. Zimmerman , Dwadasi H.R. Sarma
Inventor： Carl W. Berlin , Deepukumar M. Nair , David W. Zimmerman , Dwadasi H.R. Sarma
IPC: H01L23/538 , H01L21/768
CPC classification number: G01P15/00 , G01P15/08 , H01P1/2005 , H01P1/203 , H01Q1/44 , H01Q15/006
Abstract: A high-frequency Electromagnetic Bandgap (EBG) motion sensor device, and a method for making such a device are provided. The device includes a substantially planar substrate including multiple conducting vias forming a periodic lattice in the substrate. The vias extend from the lower surface of the substrate to the upper surface of the substrate. The device also includes a movable defect positioned in the periodic lattice. The movable defect is configured to move relative to the plurality of vias. A resonant frequency of the Electromagnetic Bandgap (EBG) motion sensor device varies based on movement of the movable defect.
Abstract translation: 提供了一种高频电磁带隙（EBG）运动传感器装置及其制造方法。 该器件包括基本上平面的衬底，其包括在衬底中形成周期性晶格的多个导电通孔。 通孔从衬底的下表面延伸到衬底的上表面。 该装置还包括位于周期性晶格中的可移动缺陷。 可移动缺陷被配置成相对于多个通孔移动。 电磁带隙（EBG）运动传感器装置的谐振频率根据可移动缺陷的移动而变化。
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公开(公告)号：US20080129645A1
公开(公告)日：2008-06-05
申请号：US11633769
申请日：2006-12-05
Applicant: Carl W. Berlin , Deepukumar M. Nair
Inventor： Carl W. Berlin , Deepukumar M. Nair
CPC classification number: H01Q15/0026 , H01P1/2005 , H01Q15/006 , H05K1/0216 , H05K2201/09309 , H05K2201/09609 , Y10T29/49016
Abstract: A high-frequency Electromagnetic Bandgap (EBG) device, and a method for making the device are provided. The device includes a first substrate including multiple conducting vias forming a periodic lattice. The vias of the first substrate extend from the lower surface of the first substrate to the upper surface of the first substrate. The device also includes a second substrate having multiple conducting vias forming a periodic lattice. The vias of the second substrate extend from the lower surface of the second substrate to the upper surface of the second substrate. The second substrate is positioned adjacent to, and overlapping, the first substrate, such that the lower surface of the second substrate is in contact with the upper surface of the first substrate, and such that a plurality of vias of the second substrate are in contact with a corresponding plurality of vias of the first substrate.
Abstract translation: 提供高频电磁带隙（EBG）装置及其制造方法。 该器件包括包括形成周期性晶格的多个导电通孔的第一衬底。 第一衬底的通孔从第一衬底的下表面延伸到第一衬底的上表面。 该器件还包括具有形成周期性晶格的多个导电通孔的第二衬底。 第二基板的通孔从第二基板的下表面延伸到第二基板的上表面。 第二基板定位成与第一基板相邻并重叠，使得第二基板的下表面与第一基板的上表面接触，并且使得第二基板的多个通孔接触 与第一基板的对应的多个通孔。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20110187602A1
公开(公告)日：2011-08-04
申请号：US13015254
申请日：2011-01-27
Applicant: Deepukumar M. Nair , Kumaran Manikantan Nair , Mark Frederick McCombs , Joao Carlos Malerbi , James M. Parisi
Inventor： Deepukumar M. Nair , Kumaran Manikantan Nair , Mark Frederick McCombs , Joao Carlos Malerbi , James M. Parisi
CPC classification number: C03C3/068 , C03C3/19 , H01L23/66 , H01L25/0655 , H01L25/16 , H01L2223/6627 , H01L2223/6677 , H01L2224/16225 , H01L2924/09701 , H01L2924/19032 , H01L2924/3011 , H01Q21/065 , H05K1/0306 , H05K3/4688
Abstract: The invention relates to methods of forming high frequency receivers, transmitters and transceivers from Low Temperature Co-fired Ceramic (LTCC) materials. Two or more layers of a low k thick film dielectric tape and in contact with each other and two or more layers of a low k thick film dielectric tape and in contact with each other form a low k high k LTCC structure with improved properties and the ability to support economical mass production techniques for high frequency transceivers. The invention also relates to the LTCC receiving, transmitting and transceiving structures and the devices made from such structures.
Abstract translation: 本发明涉及从低温共烧陶瓷（LTCC）材料形成高频接收器，发射器和收发器的方法。 两层或多层低k厚膜电介质胶带彼此接触和两层或多层低k厚膜电介质胶带并彼此接触形成具有改进性能的低k高k LTCC结构， 支持高频收发器的经济批量生产技术的能力。 本发明还涉及LTCC接收，发射和收发结构以及由这种结构制成的设备。
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7.发明申请THIN-FILM CAPACITOR STRUCTURES EMBEDDED IN SEMICONDUCTOR PACKAGES AND METHODS OF MAKING 有权半导体封装中嵌入的薄膜电容器结构和制造方法公开(公告)号：US20100270645A1
公开(公告)日：2010-10-28
申请号：US12763433
申请日：2010-04-20
Applicant: DAVID ROSS MCGREGOR , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
Inventor： DAVID ROSS MCGREGOR , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
IPC: H01L29/86 , H01L21/768 , H01L21/50 , H01L23/522
CPC classification number: H05K1/162 , H05K3/025 , H05K3/4652 , H05K2201/0175 , H05K2201/0355 , H05K2201/09309 , H05K2201/09481 , H05K2201/09518 , H05K2201/09718 , H05K2201/09763 , H05K2201/10674 , H05K2203/1126
Abstract: Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.
Abstract translation: 提供了包括通过堆积层附着到印刷线路板芯的至少一个薄膜电容器的半导体封装，其中薄膜电容器的第一电极包括薄镍箔，薄膜电容器的第二电极 包括铜电极，并且在镍箔上形成铜层。 薄膜电容器和半导体器件之间的互连提供了将电荷转移到半导体器件和从半导体器件传输电荷的低电感路径。 还提供了制造这种半导体封装的方法。
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公开(公告)号：US07586444B2
公开(公告)日：2009-09-08
申请号：US11633769
申请日：2006-12-05
Applicant: Carl W. Berlin , Deepukumar M. Nair
Inventor： Carl W. Berlin , Deepukumar M. Nair
CPC classification number: H01Q15/0026 , H01P1/2005 , H01Q15/006 , H05K1/0216 , H05K2201/09309 , H05K2201/09609 , Y10T29/49016
Abstract: A high-frequency Electromagnetic Bandgap (EBG) device, and a method for making the device are provided. The device includes a first substrate including multiple conducting vias forming a periodic lattice. The vias of the first substrate extend from the lower surface of the first substrate to the upper surface of the first substrate. The device also includes a second substrate having multiple conducting vias forming a periodic lattice. The vias of the second substrate extend from the lower surface of the second substrate to the upper surface of the second substrate. The second substrate is positioned adjacent to, and overlapping, the first substrate, such that the lower surface of the second substrate is in contact with the upper surface of the first substrate, and such that a plurality of vias of the second substrate are in contact with a corresponding plurality of vias of the first substrate.
Abstract translation: 提供高频电磁带隙（EBG）装置及其制造方法。 该器件包括包括形成周期性晶格的多个导电通孔的第一衬底。 第一衬底的通孔从第一衬底的下表面延伸到第一衬底的上表面。 该器件还包括具有形成周期性晶格的多个导电通孔的第二衬底。 第二基板的通孔从第二基板的下表面延伸到第二基板的上表面。 第二基板定位成与第一基板相邻并重叠，使得第二基板的下表面与第一基板的上表面接触，并且使得第二基板的多个通孔接触 与第一基板的对应的多个通孔。
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9.发明授权Thin-film capacitor structures embedded in semiconductor packages and methods of making 有权半导体封装中嵌入的薄膜电容器结构和制造方法公开(公告)号：US08391017B2
公开(公告)日：2013-03-05
申请号：US12763433
申请日：2010-04-20
Applicant: David Ross McGregor , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
Inventor： David Ross McGregor , Cheong-Wo Hunter Chan , Lynne E. Dellis , Fuhan Liu , Deepukumar M. Nair , Venkatesh Sundaram
IPC: H01L29/86 , H01L21/768 , H01L21/50 , H01L23/522
CPC classification number: H05K1/162 , H05K3/025 , H05K3/4652 , H05K2201/0175 , H05K2201/0355 , H05K2201/09309 , H05K2201/09481 , H05K2201/09518 , H05K2201/09718 , H05K2201/09763 , H05K2201/10674 , H05K2203/1126
Abstract: Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.
Abstract translation: 提供了包括通过堆积层附着到印刷线路板芯的至少一个薄膜电容器的半导体封装，其中薄膜电容器的第一电极包括薄镍箔，薄膜电容器的第二电极 包括铜电极，并且在镍箔上形成铜层。 薄膜电容器和半导体器件之间的互连提供了将电荷转移到半导体器件和从半导体器件传输电荷的低电感路径。 还提供了制造这种半导体封装的方法。
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10.发明申请公开(公告)号：US20120305296A1
公开(公告)日：2012-12-06
申请号：US13483837
申请日：2012-05-30
Applicant: SCOTT E. GORDON , ELIZABETH D. HUGHES , JOAO CARLOS MALERBI , DEEPUKUMAR M. NAIR , KUMARAN MANIKANTAN NAIR , JAMES M. PARISI , MICHAEL ARNETT SMITH , KEN E. SOUDERS
Inventor： SCOTT E. GORDON , ELIZABETH D. HUGHES , JOAO CARLOS MALERBI , DEEPUKUMAR M. NAIR , KUMARAN MANIKANTAN NAIR , JAMES M. PARISI , MICHAEL ARNETT SMITH , KEN E. SOUDERS
CPC classification number: H01L23/15 , H01L23/49822 , H01L2924/0002 , H01L2924/09701 , H05K1/165 , H05K3/4061 , H05K3/4629 , H05K2201/0317 , H05K2201/0352 , H01L2924/00
Abstract: Disclosed herein is a multilayer low temperature co-fired ceramic (LTCC) structure comprising a multilayer low temperature co-fired ceramic comprising glass-ceramic dielectric layers with screen printed thick film inner conductors on portions of the layers and with thin film outer conductors deposited on the upper and lower outer surfaces of the LTCC. At least a portion of the thin film outer conductors is patterned in the form of lines and the spacings between the lines are less then 50 μm. Also disclosed is a process for making the LTCC structure.
Abstract translation: 本文公开了一种多层低温共烧陶瓷（LTCC）结构，其包括多层低温共烧陶瓷，其包含玻璃陶瓷电介质层，其中丝网印刷的厚膜内导体在层的部分上，并且薄膜外导体沉积在 LTCC的上下外表面。 薄膜外导体的至少一部分以线的形式图案化，并且线之间的间距小于50μm。 还公开了制造LTCC结构的方法。
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