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    All NPN-transistor PTAT current source
    1.
    发明授权
    All NPN-transistor PTAT current source 有权
    所有NPN晶体管PTAT电流源

    公开(公告)号：US07952421B2

    公开(公告)日：2011-05-31

    申请号：US11719209

    申请日：2005-11-08

    Applicant: Lorenzo Tripodi ,  Mihai A.T. Sanduleanu ,  Pieter G. Blanken

    Inventor： Lorenzo Tripodi ,  Mihai A.T. Sanduleanu ,  Pieter G. Blanken

    IPC: H01L35/00

    CPC classification number: G05F3/262

    Abstract: The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available. For example, the PTAT current source circuit of the invention can be used in radio frequency power amplifiers, in radio frequency tag circuits, in a satellite microwave front-end.

    Abstract translation: 本发明涉及一种改进的PTAT电流源和用于产生PTAT电流的相应方法。 利用晶体管的基极 - 发射极电压和集电极电流之间的对数关系，两个晶体管产生并强制采集集电极电流。 电阻器感测两个晶体管的基极 - 发射极之间的电压差，其可以具有相同或不同的面积。 流过电阻器的电流的一小部分被迫进入晶体管集电极并由输出晶体管镜像，以提供输出电流。 通过该原理，可以提供所有npn晶体管PTAT电流源，其不像传统的PTAT电流源那样不需要小型晶体管。 本发明通常适用于需要PTAT电流参考的各种不同类型的集成电路，特别是在p型器件不可用的InP和GaAs的现代先进技术中。 例如，本发明的PTAT电流源电路可以用于卫星微波前端的射频功率放大器，射频标签电路中。

    HIGH-FREQUENCY WAVEGUIDE STRUCTURE
    4.
    发明申请
    HIGH-FREQUENCY WAVEGUIDE STRUCTURE 审中-公开
    高频波形结构

    公开(公告)号：US20130069743A1

    公开(公告)日：2013-03-21

    申请号：US13611766

    申请日：2012-09-12

    Applicant: MARION KORNELIA MATTERS-KAMMERER ,  LORENZO TRIPODI

    Inventor： MARION KORNELIA MATTERS-KAMMERER ,  LORENZO TRIPODI

    IPC: H01P3/08 ,  H01P11/00 ,  G01J5/10

    CPC classification number: H01P3/02 ,  Y10T29/49016

    Abstract: For integration into a CMOS/BICMOS process, a high-frequency waveguide structure, a diode-bridge structure and an imaging/spectroscopy system and a method for manufacturing a high-frequency waveguide structure are provided, wherein a height of each of a first and a second conducting lines (11, 12) is higher than a width of each of the first and the second conducting lines (11, 12). The first and second conducting lines (11, 12) form a slotline waveguide, wherein the third conducting line (13) together with the first and the second conducting lines (11, 12) form a (co-)planar waveguide.

    Abstract translation: 为了集成到CMOS / BICMOS工艺中，提供了一种高频波导结构，二极管桥结构和成像/光谱系统以及制造高频波导结构的方法，其中，第一和第 第二导线（11,12）的宽度比第一和第二导线（11,12）的宽度高。 第一和第二导线（11,12）形成槽线波导，其中第三导线（13）与第一和第二导线（11,12）一起形成（共）平面波导。

    DEVICE FOR ANALYZING A SAMPLE USING RADIATION IN THE TERAHERTZ FREQUENCY RANGE
    5.
    发明申请
    DEVICE FOR ANALYZING A SAMPLE USING RADIATION IN THE TERAHERTZ FREQUENCY RANGE 有权
    用于分析使用TERAHERTZ频率范围辐射的样本的设备

    公开(公告)号：US20120305772A1

    公开(公告)日：2012-12-06

    申请号：US13578778

    申请日：2011-02-07

    Applicant: Lorenzo Tripodi ,  Jaime Gomez Rivas ,  Ullrich Richard Rudolf Pfeiffer ,  Peter Gunther Haring Bolivar

    Inventor： Lorenzo Tripodi ,  Jaime Gomez Rivas ,  Ullrich Richard Rudolf Pfeiffer ,  Peter Gunther Haring Bolivar

    IPC: G01J5/10 ,  G01J5/20

    CPC classification number: G01N21/3581 ,  G01N21/3563 ,  G01N21/553 ,  G02B6/1226

    Abstract: A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter (3) comprising a THz signal generator (5, 6, 7; 51) for generating an electromagnetic THz signal, the THz signal generator comprising a nonlinear transmission line (7; 52). The device further comprises a surface plasmon polariton generating unit (8) adapted to convert the THz signal into a surface plasmon polariton. The transmitter (3) and the surface plamon polariton generating unit (8) are either integrated on one common substrate or on two separate substrates.

    Abstract translation: 提供了使用太赫兹频率范围内的辐射来分析样本的装置。 该装置包括一个包括用于产生电磁THz信号的THz信号发生器（5,6,7; 51）的发射器（3），该THz信号发生器包括非线性传输线（7; 52）。 该装置还包括适于将THz信号转换为表面等离子体激元的表面等离子体激元产生单元（8）。 发射器（3）和表面极化子产生单元（8）被集成在一个公共衬底上或两个单独的衬底上。

    AMPLIFIER
    7.
    发明申请
    AMPLIFIER 有权
    放大器

    公开(公告)号：US20100026391A1

    公开(公告)日：2010-02-04

    申请号：US12593829

    申请日：2008-03-18

    Applicant: Johannes H. A. Brekelmans ,  Lorenzo Tripodi

    Inventor： Johannes H. A. Brekelmans ,  Lorenzo Tripodi

    IPC: H03F3/04 ,  G05F1/10

    CPC classification number: H03F1/308 ,  H03F3/3022

    Abstract: There is provided a method and apparatus for maintaining a bias current (IBIAS1) that flows through two transistors (MN2, MP2) at a target level. The two transistors are both connected to form a series network between positive (VDD) and negative (GND) voltage supply terminals. The bias current flows through the two transistors (MN2, MP2) when the circuit is at equilibrium, and the threshold voltage of the transistors is controlled by controlling the voltage (VB1, VB2) that is applied to the transistors bulk terminals. In addition to the two transistors, there is provided a control circuit (25) that measures a circuit parameter (VDD) that is indicative of the level of bias current flowing through the two transistors. In response to the measured parameter, the control circuit adjusts the bulk voltage levels of the two transistors (VB1, VB2) SO as to alter the transistors threshold voltages and maintain the level of bias current at a target level.

    Abstract translation: 提供了一种用于维持在目标电平上流过两个晶体管（MN2，MP2）的偏置电流（IBIAS1）的方法和装置。 两个晶体管都连接在正（VDD）和负（GND）电源端之间形成串联网络。 当电路处于平衡状态时，偏置电流流经两个晶体管（MN2，MP2），并且通过控制施加到晶体管批量端子的电压（VB1，VB2）来控制晶体管的阈值电压。 除了两个晶体管之外，还提供了一个测量指示流经两个晶体管的偏置电流电平的电路参数（VDD）的控制电路（25）。 响应于测量的参数，控制电路调节两个晶体管（VB1，VB2）SO的体电压电平，以改变晶体管阈值电压并将偏置电流的电平保持在目标电平。

    Amplifier circuit
    8.
    发明授权
    Amplifier circuit 有权
    放大器电路

    公开(公告)号：US08279005B2

    公开(公告)日：2012-10-02

    申请号：US12593829

    申请日：2008-03-18

    Applicant: Johannes H. A. Brekelmans ,  Lorenzo Tripodi

    Inventor： Johannes H. A. Brekelmans ,  Lorenzo Tripodi

    IPC: H03F3/18

    CPC classification number: H03F1/308 ,  H03F3/3022

    Abstract: There is provided a method and apparatus for maintaining a bias current that flows through two transistors at a target level. The two transistors are both connected to form a series network between positive and negative voltage supply terminals. The bias current flows through the two transistors when the circuit is at equilibrium, and the threshold voltage of the transistors is controlled by controlling the voltage that is applied to the transistors bulk terminals. In addition to the two transistors, there is provided a control circuit that measures a circuit parameter that is indicative of the level of bias current flowing through the two transistors. In response to the measured parameter, the control circuit adjusts the bulk voltage levels of the two transistors so as to alter the transistors threshold voltages and maintain the level of bias current at a target level.

    Abstract translation: 提供了一种用于维持在目标电平上流过两个晶体管的偏置电流的方法和装置。 两个晶体管都被连接以在正电压和负电压端子之间形成串联网络。 当电路处于平衡时，偏置电流流过两个晶体管，并且通过控制施加到晶体管体式端子的电压来控制晶体管的阈值电压。 除了两个晶体管之外，还提供了一种控制电路，其测量指示流经两个晶体管的偏置电流的电平的电路参数。 响应于测量的参数，控制电路调节两个晶体管的体电压电平，以便改变晶体管阈值电压并将偏置电流的电平维持在目标水平。

    ALL NPN-TRANSISTOR PTAT CURRENT SOURCE
    9.
    发明申请
    ALL NPN-TRANSISTOR PTAT CURRENT SOURCE 有权
    所有NPN晶体管PTAT电流源

    公开(公告)号：US20090295465A1

    公开(公告)日：2009-12-03

    申请号：US11719209

    申请日：2005-11-08

    Applicant: Lorenzo Tripodi ,  Mihai A .T. Sanduleanu ,  Pieter G. Blanken

    Inventor： Lorenzo Tripodi ,  Mihai A .T. Sanduleanu ,  Pieter G. Blanken

    IPC: G05F1/10

    CPC classification number: G05F3/262

    Abstract: The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available. For example, the PTAT current source circuit of the invention can be used in radio frequency power amplifiers, in radio frequency tag circuits, in a satellite microwave front-end.

    Abstract translation: 本发明涉及一种改进的PTAT电流源和用于产生PTAT电流的相应方法。 利用晶体管的基极 - 发射极电压和集电极电流之间的对数关系，两个晶体管产生并强制采集集电极电流。 电阻器感测两个晶体管的基极 - 发射极之间的电压差，其可以具有相同或不同的面积。 流过电阻器的电流的一小部分被迫进入晶体管集电极并由输出晶体管镜像，以提供输出电流。 通过该原理，可以提供所有npn晶体管PTAT电流源，其不像传统的PTAT电流源那样不需要小型晶体管。 本发明通常适用于需要PTAT电流参考的各种不同类型的集成电路，特别是在p型器件不可用的InP和GaAs的现代先进技术中。 例如，本发明的PTAT电流源电路可以用于卫星微波前端的射频功率放大器，射频标签电路中。

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