Abstract:
A semiconductor assembly includes a multilayer wiring board including at least three insulating layers, first, second and third insulating layers and a semiconductor device attached to one principal surface of the first insulating layer. The first, second and third insulating layers are stacked in this order. The multilayer wiring board further includes a heat-insulating member made of a material having a lower thermal conductivity than the insulating layers. The heat-insulating member is disposed between the first and second insulating layers or next to the first insulating layer at a side opposite to the one principal surface.
Abstract:
While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. Entire side faces at corner portions of the semiconductor chip are covered with the seal-bonding resin. Therefore, loads generated at the corner portions due to board flexures for thermal expansion and contraction differences among the individual members caused by heating and cooling during mounting as well as for mechanical loads after mounting so that internal breakdown of the semiconductor chip can be avoided.
Abstract:
A multilayer wiring board is inhibited from being warped when flip-chip bonding a semiconductor device to the multilayer wiring board, thereby increasing the reliability of connecting the semiconductor assembly to a motherboard.A heat-insulating layer 10 is provided between a core board 1 and a flip-chip bonding-side insulating layer 3 in a multilayer wiring board MB1, thereby preventing thermal conduction from a heat tool, so that the amounts of thermal expansion of the core board 1 and an insulating layer 4 are minimized, resulting in reduced warpage of the multilayer wiring board MB1.
Abstract:
While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding use resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding use resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. In the semiconductor chip mounted structure formed in this way, entire side faces at the corner portions of the semiconductor chip are covered with the seal-bonding use resin. As a result, loads generated at corner portions of the semiconductor chip due to board flexures for thermal expansion differences and thermal contraction differences among the individual members caused by heating process and cooling process in mounting operation as well as for mechanical loads after the mounting operation so that internal breakdown of the semiconductor chip can be avoided.
Abstract:
A semiconductor device includes: a semiconductor carrier with a top surface on which a plurality of electrodes are disposed; and a semiconductor element electrically connected through a plurality of bump electrodes to the plurality of associated electrodes. The plurality of electrodes are substantially uniformly spaced.
Abstract:
While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. Entire side faces at corner portions of the semiconductor chip are covered with the seal-bonding resin. Therefore, loads generated at the corner portions due to board flexures for thermal expansion and contraction differences among the individual members caused by heating and cooling during mounting as well as for mechanical loads after mounting so that internal breakdown of the semiconductor chip can be avoided.
Abstract:
The present invention provides a semiconductor device of a double-side mounting structure including a circuit board and a plurality of semiconductor chips arranged and joined together on the opposite surfaces of the circuit board, wherein in an area in which the semiconductor chip 31 mounted on the top surface of the circuit board 2 overlaps with the semiconductor chip 32 mounted on the bottom surface of the circuit board 2, a recess portion (or a protruding portion 22) is formed in the surfaces of the circuit board 2.
Abstract:
In this semiconductor chip 3, a table electrode 13 is interposed between a bump electrode 14 and an electrode pad 6. The table electrode 13 is formed by forming a plurality of cores 15 having a smaller Young's modulus than the bump electrode 14, on the electrode pad 6, and then covering the surfaces of the cores 15 with a conductive electrode 16. When the semiconductor chip 3 is flip-chip mounted, the bump electrode 14 is plastically deformed and the table electrode 13 is elastically deformed appropriately, thereby obtaining a good conductive state.
Abstract:
The present invention provides a semiconductor device of a double-side mounting structure including a circuit board and a plurality of semiconductor chips arranged and joined together on the opposite surfaces of the circuit board, wherein in an area in which the semiconductor chip 31 mounted on the top surface of the circuit board 2 overlaps with the semiconductor chip 32 mounted on the bottom surface of the circuit board 2, a recess portion 21 (or a protruding portion 22) is formed in the surfaces of the circuit board 2.
Abstract:
In this semiconductor chip 3, a table electrode 13 is interposed between a bump electrode 14 and an electrode pad 6. The table electrode 13 is formed by forming a plurality of cores 15 having a smaller Young's modulus than the bump electrode 14, on the electrode pad 6, and then covering the surfaces of the cores 15 with a conductive electrode 16. When the semiconductor chip 3 is flip-chip mounted, the bump electrode 14 is plastically deformed and the table electrode 13 is elastically deformed appropriately, thereby obtaining a good conductive state.