Abstract:
A method, apparatus, and/or system for soft defects modeling of measurements using time-domain reflectometry. Electro-Optic Sampling based Time-Domain Reflectometry (EOS-TDR) may quickly detect soft defects in a chip under test. For example, EOS-TDR may detect soft defects in each pin from a trace-structure point at a relatively high resolution. To interpret the results in a time sensitive manner, a reference model for chips may be established from chips that are known to have met the expected quality standards. Through automated analysis of the features of the device under test waveform, soft defects of a chip may be detected that would be otherwise undetectable under time constraints, temperature variations, applied current variations, applied voltage variations, vibration variations, moisture variations, or any other kind of possible variation.
Abstract:
A measuring apparatus according to the present invention includes a response signal measuring section, an input frequency domain conversion section, a response frequency domain conversion section, and a frequency characteristic acquisition section. The response signal measuring section measures a response signal within a time domain, the response signal being acquired by applying a pulse having a width of not less than one femtosecond nor more than 1000 femtoseconds to an object to be measured. The input frequency domain conversion section converts the pulse into a frequency domain. The response frequency domain conversion section converts a measurement result from the response signal measuring section into a frequency domain. The frequency characteristic acquisition section acquires a frequency characteristic of the object to be measured, from a conversion result provided from the input frequency domain conversion section and a conversion result provided from the response frequency domain conversion section.
Abstract:
According to the present invention, an electromagnetic wave measurement device includes: an electromagnetic wave detector, a frequency component acquisition unit, and a thickness indication quantity deriving unit. An object to be measured is disposed on a substrate and includes at least two layers, and the electromagnetic wave detector detects a substrate-surface-reflected electromagnetic wave which has been made incident to the object, has been reflected by the substrate, and has passed through the object. The frequency component acquisition unit acquires an amplitude of a frequency component of the substrate-surface-reflected electromagnetic wave. The thickness indication quantity deriving unit derives a thickness indication quantity based on the amplitude of the frequency component of the substrate-surface-reflected electromagnetic wave and a relationship between the thickness indication quantity and the amplitude of the frequency component of the substrate-surface-reflected electromagnetic wave.