Abstract:
A substrate for an electronic circuit, the substrate comprising a wafer of silicon Si having a top face covered in an electrically insulating layer of silicon nitride SiN, said electrically insulating layer of silicon nitride supporting one or more conductive tracks obtained by metallizing the top face of said electrically insulating layer for the purpose of enabling one or more electronic components to be connected.
Abstract:
A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.
Abstract:
An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150nullm.