公开(公告)号：US12044584B2

公开(公告)日：2024-07-23

申请号：US17771818

申请日：2021-12-31

Applicant: ANHUI UNIVERSITY

Inventor： Xiaohui Guo ,  Zhiliang Chen ,  Pengbin Gui ,  Siliang Wang ,  Wei Zeng ,  Xingang Ren ,  Lixia Yang ,  Yaohua Xu ,  Zhixiang Haung

IPC: G01L1/14

CPC classification number: G01L1/144

Abstract: A high sensitivity flexible three-dimensional force tactile sensor includes a hemispherical contact, wherein the hemispherical contact includes a tray with a groove on the surface and a hemispherical protrusion arranged in the groove. A flexible inverted cone component connected to the lower surface of the hemispherical contact, wherein a plurality of flexible triangular excitation electrode is arranged on the side surface of the flexible inverted cone component. A flexible common electrode surrounding part of the flexible triangular excitation electrode, wherein a first cavity with an opening is opened inside the flexible common electrode, parts of the flexible triangular excitation electrode and the flexible inverted cone component are arranged in the first cavity of the flexible common electrode. The flexible triangular excitation electrode and the flexible inverted cone component have no contact with the inner wall of the first cavity of the flexible common electrode to form an air cavity.

公开(公告)号：US12057502B1

公开(公告)日：2024-08-06

申请号：US18618750

申请日：2024-03-27

Applicant: Anhui University

Inventor： Xingang Ren ,  Wei Zhi ,  Huping Ju ,  Zhixiang Huang ,  Gang Wang ,  Kaikun Niu ,  Siliang Wang ,  Yingsong Li ,  Xianliang Wu ,  Sungen Cao

IPC: H01L29/78 ,  H01L23/373 ,  H01L29/06

CPC classification number: H01L29/7824 ,  H01L23/3738 ,  H01L29/0607

Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

公开(公告)号：US12078556B2

公开(公告)日：2024-09-03

申请号：US17798087

申请日：2021-12-31

Applicant: ANHUI UNIVERSITY

Inventor： Liangpan Yang ,  Xiaohui Guo ,  Siliang Wang ,  Zhiliang Chen ,  Pengbin Gui ,  Wei Zeng ,  Lixia Yang ,  Yaohua Xu ,  Zhixiang Haung

IPC: G01L1/14

CPC classification number: G01L1/142

Abstract: A capacitive flexible tactile sensor based on graded inclined micro-cylindrical structure, includes an upper electrode layer, a lower electrode layer and a dielectric layer between them. The dielectric layer is composed of an upper dielectric layer and a lower dielectric layer. The upper dielectric layer includes an upper dielectric layer base, upper dielectric layer long micro-cylinders and upper dielectric layer short micro-cylinders. The lower dielectric layer includes lower dielectric layer base, lower dielectric layer long micro-cylinder and lower dielectric layer short micro-cylinder. The upper dielectric layer long micro-cylinders and the lower dielectric layer long micro-cylinders are closely bonded, and there is a distance between the upper dielectric layer short micro-cylinder and the lower dielectric layer short micro-cylinder. The sensor structure of the present application is stable, overcomes the viscous effect.

公开(公告)号：US11955735B2

公开(公告)日：2024-04-09

申请号：US17784670

申请日：2021-12-31

Applicant: ANHUI UNIVERSITY

Inventor： Xiaohui Guo ,  Pengbin Gui ,  Siliang Wang ,  Liangpan Yang ,  Zhiliang Chen ,  Wei Zeng ,  Lixia Yang ,  Yaohua Xu ,  Zhixiang Haung

IPC: H01Q9/04 ,  H01Q1/27 ,  H01Q1/48 ,  H01Q5/25 ,  H01Q9/40

CPC classification number: H01Q9/045 ,  H01Q1/273 ,  H01Q1/48 ,  H01Q5/25 ,  H01Q9/40

Abstract: A four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide, includes a flexible base. A ground plane, a radiation patch and a feeder are arranged on the flexible base. There are several resonant tanks on the feeder and the radiation patch. The flexible base is made of insulating flexible material, and the feeder, the radiation patch and the ground plane are made of conductive flexible material. The four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide of the present application can be prepared by layer-by-layer assembly technology, spray printing or printed circuit board technology, and has the advantages of miniaturization and low profile, compact structure, convenient production, good conformality, wearable and other advantages.