Abstract:
A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.
Abstract:
A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.
Abstract:
An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.
Abstract:
Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.
Abstract:
Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.
Abstract:
A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.
Abstract:
A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.
Abstract:
An optical calibration method and apparatus for calibration of wafer positioning within a reactor chamber under process conditions employs an array of cameras in a lid of the chamber using images of the wafer edge to locate the wafer relative to the reference feature.
Abstract:
Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.
Abstract:
Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.