-
公开(公告)号:US09196462B2
公开(公告)日:2015-11-24
申请号:US13649913
申请日:2012-10-11
Applicant: Applied Materials, Inc.
Inventor: James D. Carducci , Olga Regelman
IPC: H01J37/32
CPC classification number: H01J37/32633 , H01J37/3244 , H01J37/32449 , H01J37/32477
Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
Abstract translation: 本发明通常包括用于将喷头组件与处理室壁电隔离的喷头绝缘体,用于衬里处理室的腔室衬套组件,用于衬里处理室的抽空区域的下室衬套和用于确保 均匀排出处理室。 当在蚀刻室内处理衬底时,喷头需要与地电隔离。 喷头绝缘体可以将喷头与地面隔离,同时也防止等离子体进入其占据的体积。 腔室衬垫可以保护腔室壁免受污染并减少腔室清洁。 流量均衡器将允许将处理气体均匀地拉入抽空通道,而不是不成比例的流入排气通道。 下层衬垫有助于均匀地抽真空并保护室壁免受污染。
-
公开(公告)号:US10373807B2
公开(公告)日:2019-08-06
申请号:US16107844
申请日:2018-08-21
Applicant: Applied Materials, Inc.
Inventor: Kenneth S. Collins , Michael R. Rice , Kartik Ramaswamy , James D. Carducci , Yue Guo , Olga Regelman
IPC: H01J37/32
Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
-
公开(公告)号:US09799491B2
公开(公告)日:2017-10-24
申请号:US15146133
申请日:2016-05-04
Applicant: APPLIED MATERIALS, INC.
Inventor: Leonid Dorf , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , James D. Carducci , Hamid Tavassoli , Olga Regelman , Ying Zhang
IPC: H01J37/32 , H01J37/06 , H01L21/3065
CPC classification number: H01J37/32174 , H01J37/06 , H01J37/32082 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32458 , H01J37/32532 , H01J2237/3151 , H01J2237/3174 , H01J2237/334 , H01J2237/3348 , H01L21/3065 , H01L21/31116
Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
-
公开(公告)号:US20180053631A1
公开(公告)日:2018-02-22
申请号:US15783983
申请日:2017-10-13
Applicant: Applied Materials, Inc.
Inventor: Leonid Dorf , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , James D. Carducci , Hamid Tavassoli , Olga Regelman , Ying Zhang
IPC: H01J37/32 , H01J37/06 , H01L21/3065
CPC classification number: H01J37/32174 , H01J37/06 , H01J37/32082 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32458 , H01J37/32532 , H01J2237/3151 , H01J2237/3174 , H01J2237/334 , H01J2237/3348 , H01L21/3065 , H01L21/31116
Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
-
公开(公告)号:US20170125217A1
公开(公告)日:2017-05-04
申请号:US15146133
申请日:2016-05-04
Applicant: APPLIED MATERIALS, INC.
Inventor: Leonid Dorf , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , James D. Carducci , Hamid Tavassoli , Olga Regelman , Ying Zhang
CPC classification number: H01J37/32174 , H01J37/06 , H01J37/32082 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32458 , H01J37/32532 , H01J2237/3151 , H01J2237/3174 , H01J2237/334 , H01J2237/3348 , H01L21/3065 , H01L21/31116
Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
-
公开(公告)号:US10418225B2
公开(公告)日:2019-09-17
申请号:US16107855
申请日:2018-08-21
Applicant: Applied Materials, Inc.
Inventor: Kenneth S. Collins , Michael R. Rice , Kartik Ramaswamy , James D. Carducci , Yue Guo , Olga Regelman
IPC: H01J37/32
Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
-
公开(公告)号:US10312056B2
公开(公告)日:2019-06-04
申请号:US16059608
申请日:2018-08-09
Applicant: Applied Materials, Inc.
Inventor: Kenneth S. Collins , Michael R. Rice , Kartik Ramaswamy , James D. Carducci , Yue Guo , Olga Regelman
IPC: H01J37/32
Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
-
公开(公告)号:US09570275B2
公开(公告)日:2017-02-14
申请号:US14531831
申请日:2014-11-03
Applicant: Applied Materials, Inc.
Inventor: James D. Carducci , Olga Regelman , Kallol Bera , Douglas A. Buchberger, Jr. , Paul Brillhart
CPC classification number: H01J37/3244 , B32B43/00 , C23C16/4412 , C23C16/45565 , C23C16/4557 , C23C16/45591 , H01J37/32449 , H01J37/32724 , H01J2237/3343 , Y10T29/49815
Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时,衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时,在蚀刻的情况下,等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻,喷头组件可以分成两个区域,每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边,而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动,可以增加基板的蚀刻均匀性。
-
公开(公告)号:US20130327480A1
公开(公告)日:2013-12-12
申请号:US13649913
申请日:2012-10-11
Applicant: Applied Materials, Inc.
Inventor: James D. Carducci , Olga Regelman
IPC: C23F1/08
CPC classification number: H01J37/32633 , H01J37/3244 , H01J37/32449 , H01J37/32477
Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
-
-
-
-
-
-
-
-