公开(公告)号：US20250157952A1

公开(公告)日：2025-05-15

申请号：US18917894

申请日：2024-10-16

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： Debanjan Jana ,  Yiting Sun ,  David De Roest ,  Daniele Piumi ,  Sara Paolillo ,  Philippe Bezard ,  Vincent Renaud

IPC: H01L23/64 ,  H01L21/02 ,  H01L21/311

Abstract: A method for forming an intermediate in the multiple patterning lithographic formation of a semiconductor device mask involves: 1) Providing a target layer; 2) Using EUV lithography to form mandrels on the target layer, with a pitch of less than 40 nm; 3) Depositing a conformal spacer material on the mandrels, narrowing the gaps between them; 4) Performing a directional etch to expose the top surface of the mandrels. The spacer material has a resistivity lower than 104 Ω·cm at 20° C.

公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

Applicant: ASM IP Holding B.V.

Inventor： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

Abstract: Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

公开(公告)号：US20240170282A1

公开(公告)日：2024-05-23

申请号：US18384448

申请日：2023-10-27

Applicant: ASM IP Holding B.V.

Inventor： Jerome Samuel Nicolas ,  Fanyong Ran ,  João Ricardo Antunes Afonso ,  Yiting Sun

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/027

CPC classification number: H01L21/02304 ,  C23C16/45544 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer. Properties of the adhesion layer can be tuned based on a selected photoresist by varying one or more process conditions.

公开(公告)号：US20220216059A1

公开(公告)日：2022-07-07

申请号：US17568027

申请日：2022-01-04

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Ryu Nakano ,  Ivan Zyulkov ,  Yiting Sun ,  Yoann Francis Tomczak ,  David de Roest

IPC: H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/02 ,  C23C16/52

Abstract: Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal.

公开(公告)号：US09117666B2

公开(公告)日：2015-08-25

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/469 ,  H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。

公开(公告)号：US20150170910A1

公开(公告)日：2015-06-18

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。