公开(公告)号：US20220403516A1

公开(公告)日：2022-12-22

申请号：US17842007

申请日：2022-06-16

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Eric Shero ,  Todd Dunn ,  Jonathan Bakke ,  Jereld Winkler ,  Xingye Wang ,  Eric Jen Cheng Liu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/56

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

公开(公告)号：US20230126516A1

公开(公告)日：2023-04-27

申请号：US17971860

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Xingye Wang ,  Fu Tang ,  Eric Jen cheng Liu ,  Peijun Jerry Chen ,  YoungChol Byun

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34

Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.