公开(公告)号：US20040087133A1

公开(公告)日：2004-05-06

申请号：US10693200

申请日：2003-10-24

Applicant: ASM JAPAN K.K.

Inventor： Devendra Kumar

IPC: H01L021/4763

CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/7682

Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

Abstract translation: 半导体器件的制造方法包括：（i）在其上形成有电路的基板上沉积由诸如苯并环丁烯的有机聚合物制成的牺牲层; （ii）蚀刻除了要形成气隙的部分之外的牺牲层; （iii）在所述衬底上沉积低介电层，直到所述空隙部分完全封闭在所述低电介质层中; （iv）蚀刻低电介质层以在其上形成通孔和沟槽; （v）在步骤（iv）之前或之后，除去气隙部分; 和（vi）在通孔和沟槽中沉积铜，所述通孔和沟槽填充有与基底表面接触的铜。

公开(公告)号：US20030162408A1

公开(公告)日：2003-08-28

申请号：US10317239

申请日：2002-12-11

Applicant: ASM JAPAN K.K.

Inventor： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a. low dielectric constant.

Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过减少反应气体的总流量而以a形成硅氧烷聚合物膜的方式延长。 低介电常数。