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    Method for forming low-k hard film
    1.
    发明申请
    Method for forming low-k hard film 有权
    低k硬膜的形成方法

    公开(公告)号：US20040038514A1

    公开(公告)日：2004-02-26

    申请号：US10412363

    申请日：2003-04-11

    Applicant: ASM JAPAN K.K.

    Inventor： Yasuyoshi Hyodo ,  Atsuki Fukazawa ,  Yoshinori Morisada ,  Masashi Yamaguchi ,  Nobuo Matsuki

    IPC: H01L021/4763

    CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

    Abstract: A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

    Abstract translation: 通过使含硅烃化合物汽化，形成源极气体，将由源气体构成的反应气体和任选的醇等添加气体引入到半导体基板上的绝缘膜上，形成硬膜至反应空间 等离子体CVD装置，并且施加低频RF功率和高频RF功率。 含硅烃化合物包括使用基础结构的形成低聚物的反应性基团作为基础结构的环状含Si烃化合物和/或线性含Si烃化合物。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

    Insulation film on semiconductor substrate and method for forming same
    2.
    发明申请
    Insulation film on semiconductor substrate and method for forming same 有权
    半导体衬底上的绝缘膜及其形成方法

    公开(公告)号：US20030224622A1

    公开(公告)日：2003-12-04

    申请号：US10402109

    申请日：2003-03-27

    Applicant: ASM JAPAN K.K.

    Inventor： Nobuo Matsuki ,  Yoshinori Morisada ,  Yasuyoshi Hyodo ,  Seijiro Umemoto

    IPC: H01L021/31

    CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

    Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50null C.-100null C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.

    Abstract translation: 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置，并且在-50℃-100℃的温度下通过等离子体聚合沉积硅​​氧烷聚合物膜。反应气体在反应空间中的停留时间通过减少反应气体的总流量而延长 以形成低介电常数例如2.5的硅氧烷聚合物膜的方式。

    Method for forming low dielectric constant interlayer insulation film
    5.
    发明申请
    Method for forming low dielectric constant interlayer insulation film 有权
    低介电常数层间绝缘膜的形成方法

    公开(公告)号：US20030143867A1

    公开(公告)日：2003-07-31

    申请号：US10309401

    申请日：2002-12-03

    Applicant: ASM JAPAN K.K.

    Inventor： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

    IPC: H01L021/31 ,  H01L021/469

    CPC classification number: C23C16/45523 ,  C23C16/401

    Abstract: An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

    Abstract translation: 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

    Gas-shield electron-beam gun for thin-film curing application
    6.
    发明申请
    Gas-shield electron-beam gun for thin-film curing application 有权
    用于薄膜固化应用的气体保护电子束枪

    公开(公告)号：US20040232355A1

    公开(公告)日：2004-11-25

    申请号：US10847127

    申请日：2004-05-17

    Applicant: ASM JAPAN K.K.

    Inventor： Nobuo Matsuki ,  Atsuki Fukazawa ,  Naoto Tsuji

    IPC: H01J037/32

    CPC classification number: H01J33/00 ,  H01J37/06

    Abstract: An electron-beam irradiation apparatus includes an evacuatable filament-electron gun chamber housing a filament and an anode and having an inactive-gas inlet through which an inactive gas flows in; an evacuatable treatment chamber connected to an exhaust system; and a separation wall for separating the filament-electrode gun chamber and the treatment chamber. The separation wall has an aperture configured to pass electrons and gas therethrough from the filament-electron gun chamber.

    Abstract translation: 电子束照射装置包括容纳灯丝和阳极并具有非活性气体入口的惰性气体入口的可抽出的灯丝电子枪室; 连接到排气系统的可抽空处理室; 以及用于分离灯丝电极枪室和处理室的分离壁。 分隔壁具有孔，该孔被配置为使电子和气体从灯丝电子枪室通过。

    Siloxan polymer film on semiconductor substrate
    7.
    发明申请
    Siloxan polymer film on semiconductor substrate 有权
    半导体衬底上的硅氧烷聚合物膜

    公开(公告)号：US20020160626A1

    公开(公告)日：2002-10-31

    申请号：US10133419

    申请日：2002-04-25

    Applicant: ASM JAPAN K.K.

    Inventor： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

    IPC: H01L021/31

    CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has nullSiR2Onull repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula SinullOnullnull1R2nullnullnullnull2(OCnH2nnull1)null wherein null is an integer of 1-3, null is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

    Abstract translation: 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

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