APPARATUS FOR AND METHOD OF LITHOGRAPHY SUPPORT CLEANING

    公开(公告)号:US20240419089A1

    公开(公告)日:2024-12-19

    申请号:US18821789

    申请日:2024-08-30

    Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a base supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.

    SYSTEMS AND METHODS FOR FORMING STRUCTURES ON A SURFACE

    公开(公告)号:US20230359118A1

    公开(公告)日:2023-11-09

    申请号:US17912202

    申请日:2021-03-16

    CPC classification number: G03F7/0035 G03F7/2037

    Abstract: Systems and methods for forming structures (e.g., a plurality of support peaks) on a surface are described. Forming structures on a surface includes masking one or more portions of the surface; removing material from one or more unmasked portions of the surface; and iteratively repeating the masking and removing to reshape the unmasked portions of the surface until the plurality of structures (e.g., support peaks) are formed such that regions of the surface between individual structures (support peaks) have a target characteristic such as a target topography, roughness, etc.

    APPARATUS AND METHOD FOR CLEANING A SUPPORT STRUCTURE IN A LIGHOGRAPHIC SYSTEM

    公开(公告)号:US20220066332A1

    公开(公告)日:2022-03-03

    申请号:US17418487

    申请日:2019-12-18

    Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which abase supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.

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