公开(公告)号：US09111860B2

公开(公告)日：2015-08-18

申请号：US14452192

申请日：2014-08-05

Applicant: Advanced Technology Materials, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01L21/26 ,  H01L21/42 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  C23C14/48 ,  C23C14/52

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US20140342538A1

公开(公告)日：2014-11-20

申请号：US14452192

申请日：2014-08-05

Applicant: Advanced Technology Materials, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01L21/265 ,  C23C14/52 ,  C23C14/48

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US20140301932A1

公开(公告)日：2014-10-09

申请号：US14350543

申请日：2012-10-09

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC: C01B35/06

CPC classification number: C01B35/061 ,  B01J3/03 ,  B01J7/00 ,  B01J15/00 ,  B01J19/0073 ,  B01J19/129 ,  B01J2219/00094 ,  B01J2219/00148 ,  B01J2219/0254 ,  B01J2219/0272 ,  B01J2219/0277 ,  B01J2219/0886 ,  Y02P20/149

Abstract: A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B2F4.

Abstract translation: 提供了一种从固体反应物料制备化合物或中间体的反应体系和方法。 在具体方面，提供了一种反应体系和方法，用于制备可用作在底物中硼离子注入的前体的含硼前体化合物。 在另一具体方面，提供反应器系统和方法来制造硼前体例如B2F4。

公开(公告)号：US20130078790A1

公开(公告)日：2013-03-28

申请号：US13682416

申请日：2012-11-20

Applicant: Advanced Technology Materials, Inc.

Inventor： Joseph D. Sweeney ,  Oleg Byl ,  Robert Kaim

IPC: H01L21/265

CPC classification number: H01L21/265 ,  C23C14/06 ,  C23C14/0605 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/2236

Abstract: A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

Abstract translation: 一种将碳离子注入目标衬底的方法，包括：使含碳的掺杂剂材料电离以产生具有离子的等离子体; 任选地将另外的气体或一系列气体与含碳掺杂剂材料共流动; 并将离子注入目标衬底。 含碳掺杂剂材料为CwFxOyHz，其中如果w = 1，则x> 0，y和z可以取任何值，并且其中如果w> 1，则x或y> 0，并且z可以取任何值 。 相对于碳源气体如一氧化碳或二氧化碳的使用，这种方法显着地提高了离子注入机工具的效率。

公开(公告)号：US20140090598A1

公开(公告)日：2014-04-03

申请号：US14095575

申请日：2013-12-03

Applicant: Advanced Technology Materials, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。