公开(公告)号：US20120074102A1

公开(公告)日：2012-03-29

申请号：US13246258

申请日：2011-09-27

Applicant: Keiji MAGARA ,  Akio HASHIZUME ,  Takashi OTA

Inventor： Keiji MAGARA ,  Akio HASHIZUME ,  Takashi OTA

IPC: C23F1/46 ,  C23F1/00 ,  C23F1/16 ,  H01L21/306 ,  C23F1/08

CPC classification number: H01L21/31111 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/67017 ,  H01L21/6708

Abstract: Phosphoric acid, sulfuric acid, and water are supplied to a flow path for a processing liquid from a first tank to a substrate held by a substrate holding unit. As a result, a mixed liquid containing the phosphoric acid, the sulfuric acid, and the water is generated. A liquid containing the sulfuric acid and a liquid containing the water are mixed together in the flow path, and the temperature of the mixed liquid containing the phosphoric acid, the sulfuric acid, and the water rises. A mixed liquid containing a phosphoric acid aqueous solution whose temperature is close to its boiling point is supplied to the substrate held by the substrate holding unit.

Abstract translation: 磷酸，硫酸和水被供给到用于处理液体的流路，从第一罐到由基板保持单元保持的基板。 结果，产生含有磷酸，硫酸和水的混合液体。 含有硫酸的液体和含有水的液体在流路中混合在一起，含有磷酸，硫酸和水的混合液体的温度上升。 将含有接近其沸点的磷酸水溶液的混合液体供给到由基板保持单元保持的基板。

公开(公告)号：US20110240601A1

公开(公告)日：2011-10-06

申请号：US13045024

申请日：2011-03-10

Applicant: Akio HASHIZUME ,  Yuya AKANISHI ,  Kenji KAWAGUCHI ,  Manabu YAMAMOTO

Inventor： Akio HASHIZUME ,  Yuya AKANISHI ,  Kenji KAWAGUCHI ,  Manabu YAMAMOTO

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H01L21/67017 ,  B44C1/227 ,  H01L21/02063 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/76814

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract translation: 提供了一种基板处理装置，其包括：密封室，包括具有开口的室主体，相对于所述室主体可旋转地设置并构造成关闭所述开口的盖构件，以及第一液体密封结构， 所述盖构件和所述室主体，所述密封室具有从外部密封的内部空间; 盖构件旋转单元，其旋转盖构件; 基板保持/旋转单元，其在所述密封室的内部空间中保持并旋转基板; 以及处理液供给部，其向由所述基板保持旋转部旋转的基板供给处理液。

公开(公告)号：US20150034245A1

公开(公告)日：2015-02-05

申请号：US14516028

申请日：2014-10-16

Applicant: Akio HASHIZUME

Inventor： Akio HASHIZUME

IPC: B05C9/06 ,  B05C13/00 ,  B05C11/00 ,  B05C15/00 ,  C01B21/068 ,  H01L21/67

CPC classification number: B05C9/06 ,  B05C11/00 ,  B05C13/00 ,  B05C15/00 ,  C01B21/0687 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/67028 ,  H01L21/67063 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68742

Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

Abstract translation: 本发明的基板处理方法包括向基板供给甲硅烷化剂的甲硅烷化步骤，以及在甲硅烷化步骤之后向基板供给蚀刻剂的蚀刻步骤。 该方法可以进一步包括多次重复包括甲硅烷化步骤和蚀刻步骤的序列循环的重复步骤。 该循环可以进一步包括在蚀刻步骤之后将漂洗液体供应到基底的冲洗步骤。 该循环可以进一步包括在蚀刻步骤之后用紫外线照射衬底的UV照射步骤。 该方法可进一步包括在甲硅烷化步骤之前或之后用紫外线照射基质的预甲硅烷基化或甲硅烷基化后UV照射步骤。

公开(公告)号：US20130052828A1

公开(公告)日：2013-02-28

申请号：US13590215

申请日：2012-08-21

Applicant: Akio HASHIZUME ,  Yuya AKANISHI

Inventor： Akio HASHIZUME ,  Yuya AKANISHI

IPC: H01L21/311 ,  B05C11/00

CPC classification number: H01L21/67028 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/306

Abstract: In a substrate processing apparatus (1), a silicon oxide film on a main surface of a substrate (9) is removed in an oxide film removing part (4) and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (6). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

Abstract translation: 在基板处理装置（1）中，在氧化膜除去部（4）中除去基板（9）的主表面上的氧化硅膜，然后将甲硅烷基化材料施加到主表面，从而进行 在甲硅烷基化部分（6）中的甲硅烷基化过程。 从而可以延长Q时间从去除氧化硅膜到形成硅锗膜，并降低在形成硅锗膜时预烘烤的温度。

公开(公告)号：US20120187083A1

公开(公告)日：2012-07-26

申请号：US13353962

申请日：2012-01-19

Applicant: Akio HASHIZUME

Inventor： Akio HASHIZUME

IPC: B05D3/10 ,  B05C5/00

CPC classification number: B05C9/06 ,  B05C11/00 ,  B05C13/00 ,  B05C15/00 ,  C01B21/0687 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/67028 ,  H01L21/67063 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68742

Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

Abstract translation: 本发明的基板处理方法包括向基板供给甲硅烷化剂的甲硅烷化步骤，以及在甲硅烷化步骤之后向基板供给蚀刻剂的蚀刻步骤。 该方法可以进一步包括多次重复包括甲硅烷化步骤和蚀刻步骤的序列循环的重复步骤。 该循环可以进一步包括在蚀刻步骤之后将漂洗液体供应到基底的冲洗步骤。 该循环可以进一步包括在蚀刻步骤之后用紫外线照射衬底的UV照射步骤。 该方法可进一步包括在甲硅烷化步骤之前或之后用紫外线照射基质的预甲硅烷基化或甲硅烷基化后UV照射步骤。