公开(公告)号：US12272659B2

公开(公告)日：2025-04-08

申请号：US17944596

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yu Lei ,  Zhimin Qi ,  Aixi Zhang ,  Xianyuan Zhao ,  Wei Lei ,  Xingyao Gao ,  Shirish A. Pethe ,  Tao Huang ,  Xiang Chang ,  Patrick Po-Chun Li ,  Geraldine Vasquez ,  Dien-yeh Wu ,  Rongjun Wang

IPC: H01L23/00

Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.