公开(公告)号：US12272659B2

公开(公告)日：2025-04-08

申请号：US17944596

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yu Lei ,  Zhimin Qi ,  Aixi Zhang ,  Xianyuan Zhao ,  Wei Lei ,  Xingyao Gao ,  Shirish A. Pethe ,  Tao Huang ,  Xiang Chang ,  Patrick Po-Chun Li ,  Geraldine Vasquez ,  Dien-yeh Wu ,  Rongjun Wang

IPC: H01L23/00

Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.

公开(公告)号：US12272551B2

公开(公告)日：2025-04-08

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US20240222192A1

公开(公告)日：2024-07-04

申请号：US18149829

申请日：2023-01-04

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yu Lei ,  Zhimin Qi ,  Aixi Zhang ,  Xianyuan Zhao

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/40 ,  H01J37/32 ,  H01L23/532

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/405 ,  H01J37/32146 ,  H01L23/53238 ,  H01L23/53266 ,  H01J2237/3321 ,  H01J2237/335

Abstract: Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to a hydrogen (H2) plasma and pulses of RF. In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The hydrogen (H2) plasma and pulses of RF remove substantially all of the metal oxide, e.g., tungsten oxide (WOx), molybdenum oxide (MoOx), or ruthenium oxide (RuOx), from the substrate surface, without damaging the dielectric and/or critical dimension (CD)/profile of the structure. A metal fill can then be selectively deposited in the trench.

公开(公告)号：US20230386833A1

公开(公告)日：2023-11-30

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/0271 ,  C23C14/16 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76816 ,  H01L21/76831

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US20230323543A1

公开(公告)日：2023-10-12

申请号：US17714513

申请日：2022-04-06

Applicant: Applied Materials, Inc.

Inventor： Tuerxun Ailihumaer ,  Yixiong Yang ,  Annamalai Lakshmanan ,  Srinivas Gandikota ,  Yogesh Sharma ,  Pei Hsuan Lin ,  Yi Xu ,  Zhimin Qi ,  Aixi Zhang ,  Shiyu Yue ,  Yu Lei

IPC: C23C30/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C30/00 ,  C23C16/0245 ,  C23C16/45525 ,  C23C16/56

Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.