公开(公告)号：US20140053866A1

公开(公告)日：2014-02-27

申请号：US13970176

申请日：2013-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20160017263A1

公开(公告)日：2016-01-21

申请号：US14650565

申请日：2014-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Ren-Guan DUAN ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Daemian RAJ ,  Inna TUREVSKY

IPC: C11D11/00 ,  C11D7/10 ,  B08B3/10 ,  C11D7/08 ,  B08B3/08 ,  B08B3/12

CPC classification number: C11D11/007 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0041 ,  H01L21/67028

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NH4F and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH4F and about by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.

Abstract translation: 本发明的实施方案通常提供用于清洁UV处理室部件的方法。 在一个实施例中，用于清洁UV处理室部件的方法包括将其上形成有SiCO残留物的室部件浸泡在清洁溶液中约1至10分钟。 清洁溶液包含约5重量％至约60重量％的NH 4 F和约0.5重量％至约10重量％的HF。 该方法还包括抛光室部件。 在另一个实施例中，清洁由石英制成的处理室部件的方法包括将其中形成有SiCO残余物的室组件浸泡在包含约36重量％NH 4 F和约HF重量约3分钟的清洁溶液中。 该方法还包括向清洗溶液施加超声波功率，并机械抛光室部件。

公开(公告)号：US20160296981A1

公开(公告)日：2016-10-13

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00 ,  B08B5/00 ,  C23C16/48 ,  C23C16/44 ,  C23C16/455 ,  B08B9/08 ,  B08B17/02

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20140264059A1

公开(公告)日：2014-09-18

申请号：US14174378

申请日：2014-02-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Tuan Anh NGUYEN ,  Abhijit KANGUDE ,  Bozhi YANG ,  Amit Kumar BANSAL ,  Inna TUREVSKY ,  Scott A. HENDRICKSON ,  Juan Carlos ROCHA- ALVAREZ ,  Thomas NOWAK

IPC: H01L21/66

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors.

Abstract translation: 本文所述的半导体处理室的实施例包括衬底支撑件，与衬底支撑件相对的辐射能源，在辐射源源与衬底支撑件之间的窗口，对辐射能敏感的检测器，其被定位以检测发射的辐射能 以及对由被定位成检测由衬底发射的辐射的衬底发射的辐射敏感的检测器。 腔室还可以包括喷头。 衬底支撑件可以在检测器和窗口之间。 可以包括第二辐射能源以将能量通过窗口投射到检测器。 第二辐射能量源也可以位于第一辐射能源和检测器附近。