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    METHOD AND HARDWARE FOR CLEANING UV CHAMBERS
    1.
    发明申请
    METHOD AND HARDWARE FOR CLEANING UV CHAMBERS 有权
    清洁紫外线灯的方法和硬件

    公开(公告)号：US20140053866A1

    公开(公告)日：2014-02-27

    申请号：US13970176

    申请日：2013-08-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

    IPC: B08B7/00

    CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

    Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

    Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

    METHOD TO DETECT VALVE DEVIATION
    4.
    发明申请
    METHOD TO DETECT VALVE DEVIATION 审中-公开
    检测阀偏差的方法

    公开(公告)号：US20140261703A1

    公开(公告)日：2014-09-18

    申请号：US14188629

    申请日：2014-02-24

    Applicant: Applied Materials, Inc.

    Inventor： Daemian RAJ ,  Juan Carlos ROCHA-ALVAREZ ,  Jason K. FOSTER ,  Bo XIE ,  Alexandros T. DEMOS

    IPC: F16K37/00

    CPC classification number: F16K37/0091 ,  Y10T137/0318 ,  Y10T137/8326

    Abstract: Methods for detecting valve leakage and apparatus for the same are provided. In one embodiment, a method for detecting a valve leakage includes flowing a gas through a diverter valve, determining a pressure in a gas source provided to the diverter valve, comparing the determined pressure value with an expected pressure value, and generating a signal in response to the comparison.

    Abstract translation: 提供了检测阀门泄漏的方法及其设备。 在一个实施例中，一种用于检测阀泄漏的方法包括使气体流过分流阀，确定提供给转向阀的气源中的压力，将所确定的压力值与预期压力值进行比较，并产生响应的信号 比较。

    METHODS FOR SEAMLESS GAP FILLING OF DIELECTRIC MATERIAL
    6.
    发明申请
    METHODS FOR SEAMLESS GAP FILLING OF DIELECTRIC MATERIAL 有权

    公开(公告)号：US20230113965A1

    公开(公告)日：2023-04-13

    申请号：US17499955

    申请日：2021-10-13

    Applicant: Applied Materials, Inc.

    Inventor： Chengyu LIU ,  Ruitong XIONG ,  Bo XIE ,  Xianmin TANG ,  Yijun LIU ,  Li-Qun XIA

    IPC: H01L21/02 ,  H01L21/3205

    Abstract: A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.

    UV ASSISTED SILYLATION FOR POROUS LOW-K FILM SEALING
    7.
    发明申请
    UV ASSISTED SILYLATION FOR POROUS LOW-K FILM SEALING 审中-公开
    用于多孔低K膜密封的UV辅助硅酸盐化

    公开(公告)号：US20160017492A1

    公开(公告)日：2016-01-21

    申请号：US14801348

    申请日：2015-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Bo XIE ,  Alexandros T. DEMOS ,  Vu Ngoc Tran NGUYEN ,  Kelvin CHAN ,  He REN ,  Kang Sub YIM ,  Mehul B. NAIK

    IPC: C23C16/48 ,  C23C16/40 ,  C23C16/505 ,  B01J19/12

    CPC classification number: C23C16/482 ,  C23C16/401 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76829

    Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

    Abstract translation: 本文所述的实施例提供了一种用于密封多孔低k电介质膜的方法。 该方法包括使用循环过程在多孔低k电介质膜上形成密封层。 循环过程包括重复在多孔低k电介质膜上沉积密封层的顺序并处理密封层，直到密封层达到预定厚度。 每个中间密封层的处理在每个中间密封层的表面上产生更多的反应性位点，这提高了所得密封层的质量。

    UV-ASSISTED PHOTOCHEMICAL VAPOR DEPOSITION FOR DAMAGED LOW K FILMS PORE SEALING
    8.
    发明申请
    UV-ASSISTED PHOTOCHEMICAL VAPOR DEPOSITION FOR DAMAGED LOW K FILMS PORE SEALING 有权
    用于损坏的低K膜密封的紫外辅助光刻蒸发沉积

    公开(公告)号：US20150162189A1

    公开(公告)日：2015-06-11

    申请号：US14098428

    申请日：2013-12-05

    Applicant: Applied Materials, Inc.

    Inventor： Bo XIE ,  Kelvin CHAN ,  Alexandros T. DEMOS

    IPC: H01L21/02

    CPC classification number: H01L21/02118 ,  C23C16/482 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6719

    Abstract: Embodiments of the invention generally provide methods for sealing pores at a surface of a dielectric layer formed on a substrate. In one embodiment, the method includes exposing a dielectric layer formed on a substrate to a first pore sealing agent, wherein the first pore sealing agent contains a compound with a general formula CxHyOz, where x has a range of between 1 and 15, y has a range of between 2 and 22, and z has a range of between 1 and 3, and exposing the substrate to UV radiation in an atmosphere of the first pore sealing agent to form a first sealing layer on the dielectric layer.

    Abstract translation: 本发明的实施方案通常提供了在形成在基底上的电介质层的表面处密封孔的方法。 在一个实施方案中，该方法包括将形成在基底上的电介质层暴露于第一孔密封剂，其中第一孔密封剂含有具有通式C x H y O z的化合物，其中x具有1至15的范围，y具有 在2和22之间的范围，z具有1和3之间的范围，并且在第一孔密封剂的气氛中将基底暴露于UV辐射，以在介电层上形成第一密封层。

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