公开(公告)号：US20160379819A1

公开(公告)日：2016-12-29

申请号：US14750778

申请日：2015-06-25

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Mehul B. NAIK ,  Deenesh PADHI ,  Priyanka DASH ,  Bhaskar KUMAR ,  Alexandros T. DEMOS

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

Abstract translation: 提供了一种用于密封多孔低k电介质膜的方法。 该方法包括将衬底暴露于UV辐射和第一反应气体，其中衬底具有限定在其中的开放特征，由多孔低k电介质层和导电材料限定的开放特征，其中多孔低k电介质层 是含硅和碳的材料，并使用UV辅助光化学气相沉积在多孔低k电介质层的暴露表面上的开放特征中选择性地形成孔密封层。

公开(公告)号：US20150111396A1

公开(公告)日：2015-04-23

申请号：US14530210

申请日：2014-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Kelvin CHAN ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/3105

CPC classification number: H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Abstract translation: 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外线（UV）固化过程。

公开(公告)号：US20140053866A1

公开(公告)日：2014-02-27

申请号：US13970176

申请日：2013-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20150380265A1

公开(公告)日：2015-12-31

申请号：US14765673

申请日：2014-02-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Kang Sub YIM ,  Pendar ARDALAN ,  Sure NGO ,  Alexandros T. DEMOS

IPC: H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/31058 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02359 ,  H01L21/3105

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Abstract translation: 本文公开了一种用于沉积具有一个或多个特征的低K电介质膜的方法和装置。 形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳 将图案转移到致密的有机硅层中，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中成孔等离子体去除至少一部分 的造孔碳，并将多孔有机硅层暴露于干燥后处理。

公开(公告)号：US20140017895A1

公开(公告)日：2014-01-16

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin CHAN ,  Jin XU ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：US20160111373A1

公开(公告)日：2016-04-21

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kang Sub YIM ,  Cheng PAN ,  Sure NGO ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US20150375275A1

公开(公告)日：2015-12-31

申请号：US14758760

申请日：2014-01-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Kelvin CHAN ,  Alexandros T. DEMOS

IPC: B08B7/00 ,  H01L21/02

CPC classification number: B08B7/0057 ,  H01L21/02057 ,  H01L21/02074

Abstract: A method for removing copper oxides from a substrate with one or more copper features is disclosed herein. The method can include positioning a substrate comprising one or more copper and dielectric containing structures in a processing chamber delivering a cleaning gas comprising ammonia to the processing chamber; and exposing the copper and dielectric containing structure to the cleaning gas and ultraviolet (UV) radiation concurrently.

Abstract translation: 本文公开了一种从具有一个或多个铜特征的衬底去除铜氧化物的方法。 该方法可以包括将包含一个或多个铜和电介质的结构物的衬底定位在处理室中，该处理室将包含氨的清洁气体输送到处理室; 同时将铜和电介质结构暴露于清洁气体和紫外线（UV）辐射。

公开(公告)号：US20130344704A1

公开(公告)日：2013-12-26

申请号：US13904468

申请日：2013-05-29

Applicant: Applied Materials, Inc.

Inventor： Mahendra CHHABRA ,  Scott A. HENDRICKSON ,  Sanjeev BALUJA ,  Tsutomu KIYOHARA ,  Juan Carlos ROCHA-ALVAREZ ,  Alexandros T. DEMOS

IPC: H01L21/768

CPC classification number: C23C16/4405 ,  B05D3/066 ,  C23C14/00 ,  C23C16/56 ,  G02B1/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76825

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract translation: 本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。 在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。 该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。 在流过氧掺杂的净化气体的同时，将衬底暴露于UV辐射以固化沉积的超低k电介质层。 本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。

公开(公告)号：US20160172211A1

公开(公告)日：2016-06-16

申请号：US14933826

申请日：2015-11-05

Applicant: Applied Materials, Inc.

Inventor： Alexandros T. DEMOS ,  Deenesh PADHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  C23C16/303 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02277 ,  H01L21/0228

Abstract: Implementations described herein generally relate to methods for depositing etch stop layers, such as AlN layers, using UV assisted CVD. Methods disclosed herein generally include positioning a substrate in a process region of a process chamber; delivering an aluminum-containing precursor to the process region, the aluminum-containing precursor depositing an aluminum species onto the substrate; purging the process region of aluminum-containing precursor using an inert gas; delivering a UV responsive nitrogen-containing precursor to the process region, the UV responsive nitrogen-containing gas being activated using UV radiation to create nitrogen radicals, the nitrogen radicals reacting with the aluminum species to form an AlN layer; and purging the process region of UV responsive nitrogen-containing precursor using an inert gas.

Abstract translation: 本文描述的实施方式一般涉及使用UV辅助CVD沉积蚀刻停止层（例如AlN层）的方法。 本文公开的方法通常包括将基底定位在处理室的处理区域中; 向工艺区域输送含铝前体，所述含铝前体将铝物质沉积到所述基底上; 使用惰性气体吹扫含铝前体的工艺区域; 将UV反应性含氮前体输送到工艺区域，UV反应性含氮气体使用UV辐射活化以产生氮自由基，氮自由基与铝物质反应形成AlN层; 并使用惰性气体吹扫UV反应性含氮前体的工艺区域。

公开(公告)号：US20160071724A1

公开(公告)日：2016-03-10

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan BA ,  Weifeng YE ,  Mei-yee SHEK ,  Yu JIN ,  Li-Qun XIA ,  Deenesh PADHI ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  C23C16/44

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。