公开(公告)号：US20220246397A1

公开(公告)日：2022-08-04

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

公开(公告)号：US11664193B2

公开(公告)日：2023-05-30

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

CPC classification number: H01J37/3053 ,  H01J37/304 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/3151

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.