公开(公告)号：US20180308669A1

公开(公告)日：2018-10-25

申请号：US15955290

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Ramesh BOKKA ,  Jason M. SCHALLER ,  Jay D. PINSON, II ,  Luke BONECUTTER

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/32724 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32743 ,  H01J2237/002 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6833

Abstract: A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

公开(公告)号：US20210032748A1

公开(公告)日：2021-02-04

申请号：US16941994

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Luke BONECUTTER ,  David BLAHNIK ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/505

Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

公开(公告)号：US20230377855A1

公开(公告)日：2023-11-23

申请号：US17664324

申请日：2022-05-20

Applicant: Applied Materials, Inc.

Inventor： Mukesh Shivakumaraiah CHITRADURGA ,  Luke BONECUTTER ,  Sathya Swaroop GANTA ,  Canfeng LAI ,  Jay D. PINSON ,  Kaushik Comandoor ALAYAVALLI ,  Kallol BERA

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC classification number: H01J37/32862 ,  H01J37/32715 ,  H01J37/32091 ,  C23C16/4405 ,  B08B7/0035

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.

公开(公告)号：US20190326138A1

公开(公告)日：2019-10-24

申请号：US16388768

申请日：2019-04-18

Applicant: Applied Materials, Inc.

Inventor： Paul F. FORDERHASE ,  Luke BONECUTTER ,  Jason M. SCHALLER

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for cooling a substrate support. In one embodiment the present disclosure provides a cooling system for a substrate support. The cooling system includes a substrate support with cooling channels located within the substrate support, a heat exchanger fluidly coupled to the cooling channels, a compressor fluidly coupled to the heat exchanger, a cooling fluid supply source fluidly coupled to the cooling fluid system and a vacuum pump.

公开(公告)号：US20200219698A1

公开(公告)日：2020-07-09

申请号：US16678081

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Abhijit KANGUDE ,  Luke BONECUTTER ,  Rupankar CHOUDHURY ,  Jay D. PINSON, II

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Embodiments of the present disclosure generally relate to a semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to generating and controlling plasma. A process chamber includes a chamber body that includes one or more chamber walls and defines a processing region. The process chamber also includes two or more inductively driven radio frequency (RF) coils in a concentric axial alignment, the RF coils arranged near the chamber walls to strike and sustain a plasma inside the chamber body, where at least two of the two or more RF coils are in a recursive configuration.

公开(公告)号：US20200181772A1

公开(公告)日：2020-06-11

申请号：US16691259

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Luke BONECUTTER ,  Yunzhe YANG ,  Rupankar CHOUDHURY ,  Abhijit KANGUDE

IPC: C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.